# BSS7728N-HXY

**HXY MOSFET** · MOSFETs · SOT-23

BSS7728N-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20V, threshold VGS(th) 0.7V min to 1.9V max at 250μA, with ESD rating HBM ≥2000V. |
| 2 | S | passive | Source; continuous drain current is 0.3A at TA=25℃ and 0.19A at TA=100℃. |
| 3 | D | passive | Drain; drain-source voltage is rated at 60V, with pulsed drain current of 0.8A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 60 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 0.3 | A | TJ =150℃; TA =25℃ | 1 |
| Continuous Drain Current | ID |  |  | 0.19 | A | TJ =150℃; TA =100℃ | 1 |
| Drain Current-Pulsed | IDM |  |  | 0.8 | A | Note 1 (repetitive rating: pulse width limited by maximum junction temperature) | 1 |
| Maximum Power Dissipation | PD |  |  | 0.35 | W |  | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 350 | ℃/W | Surface mounted on FR4 board, t ≤ 10 sec (Note 2) | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 60 | 68 |  | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=60V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -500 | 100 | 500 | nA | VGS=±10V, VDS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -10 | 4 | 10 | uA | VGS=±20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.7 | 1.2 | 1.9 | V | VDS=VGS, ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 1.3 | 3 | Ω | VGS=5V, ID=0.1A | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 1 | 2 | Ω | VGS=10V, ID=0.1A | 2 |
| Forward Transconductance | gFS | 0.1 |  |  | S | VDS=10V, ID=0.2A | 2 |
| Input Capacitance | Clss |  | 21 | 50 | PF | VDS=25V, VGS=0V, F=1.0MHz | 2 |
| Output Capacitance | Coss |  | 11 | 25 | PF | VDS=25V, VGS=0V, F=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 4.2 | 5 | PF | VDS=25V, VGS=0V, F=1.0MHz | 2 |
| Total Gate Charge | Qg |  | 1.7 | 3 | nC | VDS=10V, ID=0.3A, VGS=4.5V | 2 |
| Diode Forward Voltage (Note 3) | VSD |  |  | 1.2 | V | VGS=0V, IS=0.2A | 2 |
| Diode Forward Current (Note 2) | IS |  |  | 0.3 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `BSS7728N-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `bss7728n-hxy-etched.step` / `bss7728n-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bss7728n-hxy.step` / `bss7728n-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/bss7728n-hxy-datasheet.pdf) (7 pp, sha256 `96e11b436b0a0b92`, retrieved 2026-11-12, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bss7728n-hxy-datasheet.pdf)