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BSS63LT1G

Public Made by Adom

by adom

onsemi Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BSS63LT1G

onsemi · Bipolar Transistors - BJT · SOT-23

BSS63LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor; the datasheet gives VBE(sat) of −900 mVdc max at IC = −25 mAdc and IB = −2.5 mAdc.
2 EMITTER passive Emitter terminal of the PNP transistor; the datasheet gives an emitter-base breakdown voltage V(BR)EBO of −6.0 Vdc min at IE = −10 µAdc.
3 COLLECTOR passive Collector terminal of the PNP transistor; the datasheet gives VCEO of −100 Vdc and continuous collector current IC of −100 mAdc as maximum ratings.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCEO -100 Vdc 1
Collector-Emitter Voltage (RBE = 10 k) VCER -110 Vdc RBE = 10 k 1
Collector Current - Continuous IC -100 mAdc 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Total Device Dissipation (FR-5 Board) PD 225 mW FR-5 Board (Note 1), TA = 25°C 1
Thermal Resistance Junction-to-Ambient (FR-5 Board) RJA 556 °C/W FR-5 Board (Note 1) 1
Total Device Dissipation (Alumina Substrate) PD 300 mW Alumina Substrate (Note 2), TA = 25°C 1
Thermal Resistance Junction-to-Ambient (Alumina Substrate) RJA 417 °C/W Alumina Substrate (Note 2) 1
Collector-Emitter Breakdown Voltage V(BR)CEO -100 Vdc IC = -100 Adc 2
Collector-Emitter Breakdown Voltage V(BR)CER -110 Vdc IC = -10 Adc, IE = 0, RBE = 10 k 2
Collector-Base Breakdown Voltage V(BR)CBO -110 Vdc IE = -10 Adc, IE = 0 2
Emitter-Base Breakdown Voltage V(BR)EBO -6 Vdc IE = -10 Adc 2
Collector Cutoff Current ICBO -100 nAdc VCB = -90 Vdc, IE = 0 2
Collector Cutoff Current ICER -10 Adc VCE = -110 Vdc, RBE = 10 k 2
Emitter Cutoff Current IEBO -200 nAdc VEB = -6.0 Vdc, IC = 0 2
DC Current Gain hFE 30 IC = -10 mAdc, VCE = -1.0 Vdc 2
Collector-Emitter Saturation Voltage VCE(sat) -250 mVdc IC = -25 mAdc, IB = -2.5 mAdc 2
Base-Emitter Saturation Voltage VBE(sat) -900 mVdc IC = -25 mAdc, IB = -2.5 mAdc 2
Current-Gain - Bandwidth Product fT 50 95 MHz IC = -25 mAdc, VCE = -5.0 Vdc, f = 20 MHz 2
Case Capacitance CC 20 pF IE = IC = 0, VCB = -10 Vdc, f = 1.0 MHz 2
Noise Figure NF 10 dB IC = -0.2 mA, VCE = -5.0 Vdc, Rg = 2 k, f = 1.0 kHz, BW = 200 Hz 2

CAD (KiCad official)

  • Symbol: BSS63LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bss63lt1g-etched.step / bss63lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bss63lt1g.step / bss63lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 cd905f978371a039, retrieved 2026-10-28, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF