component

BSS316NH6327

Public Made by Adom

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Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Symbol & Footprint

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Datasheet

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Contents

README

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BSS316NH6327

Infineon Technologies · MOSFETs · SOT-23

BSS316NH6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; logic-level drive rated at 4.5 V, with maximum gate-source voltage of ±20 V.
2 S passive Source; connects to the body diode anode, with continuous diode forward current up to 0.5 A.
3 D passive Drain; rated for 30 V drain-source voltage and 1.4 A continuous drain current at TA=25 °C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 1.4 A TA=25 °C 1
Continuous drain current ID 1.1 A TA=70 °C 1
Pulsed drain current ID,pulse 5.6 A TA=25 °C 1
Avalanche energy, single pulse EAS 3.7 mJ ID=1.4 A, RGS=25 Ω 1
Reverse diode dv/dt dv/dt 6 kV/µs ID=1.4 A, VDS=16 V, di/dt=200 A/µs, Tj,max=150 °C 1
Gate source voltage VGS -20 20 V 1
Operating and storage temperature Tj, Tstg -55 150 °C 1
Soldering temperature 260 °C 1
Thermal resistance, junction - ambient RthJA 250 K/W minimal footprint 2
Drain-source breakdown voltage V (BR)DSS 30 V VGS=0 V, ID=250 µA 2
Gate threshold voltage VGS(th) 1.2 1.6 2 V VDS=VGS, ID=3.7 µA 2
Drain-source leakage current IDSS 1 µA VDS=30 V, VGS=0 V, Tj=25 °C 2
Drain-source leakage current IDSS 100 µA VDS=30 V, VGS=0 V, Tj=150 °C 2
Gate-source leakage current IGSS 100 nA VGS=30 V, VDS=0 V 2
Drain-source on-state resistance RDS(on) 191 280 mΩ VGS=4.5 V, ID=1.1 A 2
Drain-source on-state resistance RDS(on) 119 160 mΩ VGS=10 V, ID=1.4 A 2
Transconductance gfs 2.3 S /VDS/>2/ID/RDS(on)max, ID=1.1 A 2
Input capacitance Ciss 71 94 pF VGS=0 V, VDS=15 V, f=1 MHz 3
Output capacitance Coss 26 35 pF VGS=0 V, VDS=15 V, f=1 MHz 3
Diode continuous forward current IS 0.5 A 3
Diode pulse current IS,pulse 5.6 A 3
Diode forward voltage VSD 0.8 1.1 V VGS=0 V, IF=1.4 A, Tj=25 °C 3

CAD (KiCad official)

  • Symbol: BSS316NH6327
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bss316nh6327-etched.step / bss316nh6327-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bss316nh6327.step / bss316nh6327.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 694d2c5f511e0229, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF