component
BSS314PEH6327
Public Made by Adomby adom
Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBSS314PEH6327
Infineon Technologies · MOSFETs · SOT-23
BSS314PEH6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel enhancement-mode MOSFET, logic level rated at 4.5 V, ESD protected, with VGS limited to ±20 V and threshold VGS(th) of -1 to -2 V. |
| 2 | S | passive | Source of the P-channel MOSFET, shown at the bottom of the symbol with the body diode connected to it; reverse diode continuous current is -0.5 A max. |
| 3 | D | passive | Drain of the P-channel MOSFET rated for VDS of 30 V, continuous drain current of -1.5 A at 25 °C and pulsed drain current of -6.1 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | -30 | V | VGS= 0V, ID=-250µA | 2 | ||
| Gate threshold voltage | VGS(th) | -1 | -1.5 | -2 | V | VDS=VGS, ID=-6.3µA | 2 |
| Drain-source leakage current (Tj=25 °C) | IDSS | -1 | mA | VDS=-30V, VGS=0 V, Tj=25 °C | 2 | ||
| Drain-source leakage current (Tj=150 °C) | IDSS | -100 | VDS=-30V, VGS=0V, Tj=150 °C | 2 | |||
| Gate-source leakage current | IGSS | -5 | μA | VGS=-20V, VDS=0V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 153 | 230 | mW | VGS=-4.5V, ID=-1.2A | 2 | |
| Drain-source on-state resistance | RDS(on) | 107 | 140 | mW | VGS=-10V, ID=-1.5A | 2 | |
| Transconductance | gfs | 3 | S | /VDS/>2/ID/RDS(on)max, ID=-1.2 A | 2 | ||
| Input capacitance | Ciss | 221 | 294 | pF | VGS=0 V, VDS=-15 V, f=1 MHz | 3 | |
| Output capacitance | Coss | 126 | 168 | pF | VGS=0 V, VDS=-15 V, f=1 MHz | 3 | |
| Reverse transfer capacitance | Crss | 7 | 11 | pF | VGS=0 V, VDS=-15 V, f=1 MHz | 3 | |
| Diode continuous forward current | IS | -0.5 | A | 3 | |||
| Diode pulse current | IS,pulse | -6.1 | A | 3 | |||
| Diode forward voltage | VSD | 0.8 | 1.1 | V | VGS=0 V, IF=-1.5A, Tj=25 °C | 3 | |
| Continuous drain current | ID | -1.5 | A | TA=25 °C | 1 | ||
| Continuous drain current | ID | -1.2 | A | TA=70 °C | 1 | ||
| Pulsed drain current | ID,pulse | -6.1 | A | TA=25 °C | 1 | ||
| Avalanche energy, single pulse | EAS | 6 | mJ | ID=-1.5 A, RGS=25 W | 1 | ||
| Reverse diode dv/dt | dv/dt | 6 | kV/µs | ID=-1.5 A, VDS=-16 V, di/dt=-200A/µs, Tj,max=150 °C | 1 | ||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Soldering temperature | 260 | °C | 1 | ||||
| Thermal resistance, junction - ambient | RthJA | 250 | K/W | minimal footprint | 2 | ||
| Turn-on delay time | td(on) | 5.1 | ns | VDD=-15V, VGS=-10 V, ID=-1.5 A, RG=6 W | 3 | ||
| Rise time | tr | 3.9 | ns | VDD=-15V, VGS=-10 V, ID=-1.5 A, RG=6 W | 3 | ||
| Turn-off delay time | td(off) | 12.4 | ns | VDD=-15V, VGS=-10 V, ID=-1.5 A, RG=6 W | 3 | ||
| Fall time | tf | 2.8 | ns | VDD=-15V, VGS=-10 V, ID=-1.5 A, RG=6 W | 3 | ||
| Gate to source charge | Qgs | -0.7 | nC | VDD=-15V, ID=-1.5A, VGS=0 to -10 V | 3 | ||
| Gate to drain charge | Qgd | -0.3 | nC | VDD=-15V, ID=-1.5A, VGS=0 to -10 V | 3 | ||
| Gate charge total | Qg | -2.9 | nC | VDD=-15V, ID=-1.5A, VGS=0 to -10 V | 3 | ||
| Gate plateau voltage | Vplateau | -3.2 | V | VDD=-15V, ID=-1.5A, VGS=0 to -10 V | 3 | ||
| Reverse recovery time | trr | 12.5 | ns | VR=-15 V, IF=-1.5A, diF/dt=100 A/µs, TA=25 °C | 3 | ||
| Reverse recovery charge | Qrr | 4.3 | nC | VR=-15 V, IF=-1.5A, diF/dt=100 A/µs, TA=25 °C | 3 |
CAD (KiCad official)
- Symbol:
BSS314PEH6327 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bss314peh6327-etched.step/bss314peh6327-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss314peh6327.step/bss314peh6327.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
9591e3ff42b66846, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).