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BSS308PEH6327-VB

Public Made by Adom

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VBsemi Elec MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsbss308peh6327-vbfactory-2.0.0extractor-text

Verified BSS308PEH6327-VB

by Ray · last 13 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

13 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • •array (skip): not an array of element pairs
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: BSS308PEH6327-VB · SOT-23 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 9-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOT-23
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-4uiougdy/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.7)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓viewers: viewers/footprint.html 17 kB, viewers/symbol.html 8 kB
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ bss308peh6327-vb.kicad_sym✓ bss308peh6327-vb.kicad_mod✓ bss308peh6327-vb.step
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Made with kicad-footprint-generator 10.0 · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray
viewers bss308peh6327-vb: viewers rendered from the public page · Ray
bss308peh6327-vb-etched.glb bss308peh6327-vb: factory component page (tier=lcsc) · Ray
bss308peh6327-vb-etched.step bss308peh6327-vb: factory component page (tier=lcsc) · Ray
bss308peh6327-vb-hero.glb bss308peh6327-vb: hero GLB from the etched model (keeps the MPN mark) · Ray
bss308peh6327-vb-hero.overlay.json bss308peh6327-vb: hero GLB from the etched model (keeps the MPN mark) · Ray
bss308peh6327-vb.glb Publish 0.1.0 · Ray
bss308peh6327-vb.kicad_mod Publish 0.1.0 · Ray
bss308peh6327-vb.kicad_sym Publish 0.1.0 · Ray
bss308peh6327-vb.lbr Publish 0.1.0 · Ray
bss308peh6327-vb.step Publish 0.1.0 · Ray
package.json Publish 0.1.0 · Ray
page.json Set visibility: public · Ray
README.md Publish 0.1.0 · Ray
verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray

BSS308PEH6327-VB

VBsemi Elec · MOSFETs · SOT-23

BSS308PEH6327-VB from VBsemi Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, with gate-source voltage limited to ±20 V and threshold of -0.5 to -2.0 V.
2 S passive Source of the P-channel MOSFET, with continuous source-drain diode current of -2.1 A at TC = 25 °C.
3 D passive Drain of the P-channel MOSFET, rated for VDS of -30 V and pulsed drain current of -18 A (t = 100 µs).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Pulsed Drain Current IDM -18 A t = 100 µs 1
Continuous Source-Drain Diode Current IS -2.1 A TC = 25 °C 1
Maximum Power Dissipation PD 2.5 W TC = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance RthJA 75 100 °C/W t ≤ 5 s, surface mounted on 1" x 1" FR4 1
Junction-to-Foot (Drain) Thermal Resistance RthJF 40 50 °C/W Steady State 1
Drain-Source Breakdown Voltage VDS -30 V VGS = 0 V, ID = - 250 µA 2
Gate-Source Threshold Voltage VGS(th) -0.5 -2 V VDS = VGS, ID = - 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = - 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -5 µA VDS = - 30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -2.5 A VDS ≤ - 5 V, VGS = - 10 V 2
Total Gate Charge Qg 24 36 nC VDS = - 15 V, VGS = - 10 V, ID = - 5.4 A 2
Total Gate Charge Qg 11.4 17 nC VDS = - 15 V, VGS = - 4.5 V, ID = - 5.4 A 2
Gate Resistance Rg 1.5 7.7 15.4 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 13 20 ns VDD = - 15 V, RL = 3.5 Ω, VGEN = - 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 38 57 ns VDD = - 15 V, RL = 3.5 Ω, VGEN = - 10 V, Rg = 1 Ω 2
Fall Time tf 6 12 ns VDD = - 15 V, RL = 3.5 Ω, VGEN = - 10 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 28 42 ns VDD = - 15 V, RL = 3.5 Ω, VGEN = - 4.5 V, Rg = 1 Ω 2
Rise Time tr 16 24 ns VDD = - 15 V, RL = 3.5 Ω, VGEN = - 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 30 45 ns VDD = - 15 V, RL = 3.5 Ω, VGEN = - 4.5 V, Rg = 1 Ω 2
Fall Time tf 10 20 ns VDD = - 15 V, RL = 3.5 Ω, VGEN = - 4.5 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS -2.1 A TC = 25 °C 2
Pulse Diode Forward Current ISM -80 A t = 100 µs 2
Body Diode Voltage VSD -0.8 -1.2 V IS = - 4.3 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 15 23 ns IF = - 4.3 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 7 14 nC IF = - 4.3 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Drain-Source On-State Resistance RDS(on) 0.046 Ω VGS = - 10 V, ID = - 4.4 A 2
Drain-Source On-State Resistance RDS(on) 0.049 Ω VGS = - 6 V, ID = - 4 A 2
Drain-Source On-State Resistance RDS(on) 0.054 Ω VGS = - 4.5 V, ID = - 3.6 A 2
Forward Transconductance gfs 18 S VDS = - 15 V, ID = - 3.4 A 2
VDS Temperature Coefficient ΔVDS/TJ -19 mV/°C ID = - 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ 4 mV/°C ID = - 250 µA 2

CAD (land: KiCad; 3D: generated from the datasheet)

  • Symbol: BSS308PEH6327-VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23, generated on the KiCad land (body 1.3 x 2.92 mm, terminals on the pads, 1.0050000000000001 mm tall, datasheet A, midpoint of min and max). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
  • 3D model files: bss308peh6327-vb-etched.step / bss308peh6327-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bss308peh6327-vb.step / bss308peh6327-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 6db61c066cde16db, retrieved 2026-11-13, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).

Datasheet PDF