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BSS306NH6327-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BSS306NH6327-HXY

HXY MOSFET · MOSFETs · SOT-23

BSS306NH6327-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the absolute maximum gate-source voltage is ±20 V (VGS), and the part is specified for gate drive as low as 2.5 V.
2 D passive Drain terminal; the absolute maximum drain-source voltage is 30 V and the continuous drain current is rated 5.8 A at TA=25℃.
3 S passive Source terminal; the continuous source current IS is rated 4.6 A and the pulsed source current ISM is rated 18.4 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V TA=25℃ unless otherwise noted 1
Gate-Source Voltage VGS -20 20 V TA=25℃ unless otherwise noted 1
Drain Current-Continuous ID 5.8 A TA=25℃ unless otherwise noted 1
Drain Current-Pulsed IDM 18.4 A Note 1 1
Maximum Power Dissipation PD 1 W TA=25℃ unless otherwise noted 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 125 ℃/W Note 2 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance (VGS=10V) RDS(ON) 22 28 mΩ VGS=10V, ID=4A 2
Static Drain-Source On-Resistance (VGS=4.5V) RDS(ON) 26 32 mΩ VGS=4.5V, ID=3A 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current (TJ=25℃) IDSS 1 uA VDS=24V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current (TJ=55℃) IDSS 5 uA VDS=24V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Resistance Rg 2.3 4.6 VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge (4.5V) Qg 5 6.9 nC VDS=15V, VGS=4.5V, ID=4A 2
Gate-Source Charge Qgs 1.1 2.2 nC VDS=15V, VGS=4.5V, ID=4A 2
Gate-Drain Charge Qgd 2.6 2.8 nC VDS=15V, VGS=4.5V, ID=4A 2
Turn-On Delay Time Td(on) 2 4 ns VDD=15V, VGS=10V, RG=3.3Ω, ID=4A 2
Rise Time Tr 34.4 62 ns VDD=15V, VGS=10V, RG=3.3Ω, ID=4A 2
Turn-Off Delay Time Td(off) 13.2 26 ns VDD=15V, VGS=10V, RG=3.3Ω, ID=4A 2
Fall Time Tf 4.8 9.6 ns VDD=15V, VGS=10V, RG=3.3Ω, ID=4A 2
Input Capacitance Ciss 420 582 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 60 87 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 53 71 pF VDS=15V, VGS=0V, f=1MHz 2
Continuous Source Current IS 4.6 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 18.4 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: BSS306NH6327-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bss306nh6327-hxy-etched.step / bss306nh6327-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bss306nh6327-hxy.step / bss306nh6327-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 564f0fd3eaf0e632, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF