component
BSS215P-JSM
Public Made by Adomby adom
JSMSEMI MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 24d ago |
| viewers | 24d ago |
| bss215p-jsm-etched.glb | 24d ago |
| bss215p-jsm-etched.step | 24d ago |
| bss215p-jsm-hero.glb | 24d ago |
| bss215p-jsm-hero.overlay.json | 24d ago |
| bss215p-jsm.glb | 24d ago |
| bss215p-jsm.kicad_mod | 24d ago |
| bss215p-jsm.kicad_sym | 24d ago |
| bss215p-jsm.lbr | 24d ago |
| bss215p-jsm.step | 24d ago |
| package.json | 24d ago |
| page.json | 24d ago |
| README.md | 24d ago |
BSS215P-JSM
JSMSEMI · MOSFETs · SOT-23-3
BSS215P-JSM from JSMSEMI, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±8V, threshold VGS(th) -0.45V to -1V at ID=-250µA. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous drain current -3A at Ta=25℃, pulsed -10A. |
| 3 | D | passive | Drain; drain-source voltage rated -20V, RDS(ON) 100mΩ max at VGS=-4.5V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDSS | -20 | V | ID=-250μA, VGS=0V | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-20V, VGS=0V | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | -10 | μA | VDS=-20V, VGS=0V, TJ=55℃ | 1 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±8V | 1 | |
| Gate Threshold Voltage | VGS(th) | -0.45 | -1 | V | VDS=VGS ID=-250μA | 1 | |
| Static Drain-Source On-Resistance | RDS(On) | 105 | 110 | mΩ | VGS=-4.5V, ID=-2.8A | 1 | |
| Static Drain-Source On-Resistance | RDS(On) | 115 | 120 | mΩ | VGS=-2.5V, ID=-2.0A | 1 | |
| On state drain current | ID(ON) | -6 | A | VGS=-4.5V, VDS ≤-5V | 1 | ||
| On state drain current | ID(ON) | -3 | A | VGS=-2.5V, VDS ≤-5V | 1 | ||
| Forward Transconductance | gFS | 6.5 | S | VDS=-5V, ID=-2.8A | 1 | ||
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -8 | 8 | V | 1 | ||
| Continuous Drain Current | ID | -3 | A | Ta=25℃ | 1 | ||
| Continuous Drain Current | ID | -2 | A | Ta=70℃ | 1 | ||
| Pulsed Drain Current | IDM | -10 | A | 1 | |||
| Power Dissipation | PD | 1.25 | W | Ta=70℃ | 1 | ||
| Thermal Resistance Junction-to-Ambient | RthJA | 100 | ℃/W | Junction-to-Ambient *1 | 1 | ||
| Thermal Resistance Junction-to-Ambient | RthJA | 166 | ℃/W | Junction-to-Ambient *3 | 1 | ||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
BSS215P-JSM - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
bss215p-jsm-etched.step/bss215p-jsm-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss215p-jsm.step/bss215p-jsm.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: JSMSEMI datasheet (4 pp, sha256
3a5c4de2285c4cb4, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).