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BSS214NW-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BSS214NW-HXY

HXY MOSFET · MOSFETs · SOT-323

BSS214NW-HXY from HXY MOSFET, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal, with VGS limited to ±12 V and gate threshold VGS(th) of 0.4 V min to 1.0 V max at VDS = VGS, ID = 250 µA.
2 D passive Drain terminal, rated for VDS of 20 V and continuous drain current ID of 2 A.
3 S passive Source terminal, with maximum continuous drain-to-source diode forward current IS of 1.0 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Drain Current-Continuous ID 2 A 1
Maximum Power Dissipation PD 0.3 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient θJA 125 ℃/W 1
Drain-source breakdown voltage V(BR)DSS 20 V VGS = 0V, ID =250μA 2
Zero gate voltage drain current IDSS 1 µA VDS =18V,VGS = 0V 2
Gate-body leakage current IGSS -100 100 nA VGS =±12V, VDS = 0V 2
Gate threshold voltage VGS(th) 0.4 0.7 1 V VDS =VGS, ID =250μA 2
Drain-source on-resistance RDS(on) 85 mΩ VGS =2.5V, ID =0.3A 2
Maximum Continuous Drain to Source Diode Forward Current IS 1 A 2
Diode forward voltage VSD 1.2 V IS=1.0A, VGS =0V 2
Input capacitance Ciss 300 pF VDS =10V,VGS =0V, f =1MHz 2
Output capacitance Coss 120 pF VDS =10V,VGS =0V, f =1MHz 2
Reverse transfer capacitance Crss 80 pF VDS =10V,VGS =0V, f =1MHz 2
Turn-on delay time td(on) 15 nS VGS=4.5V,VDS=10V, RL=5.1Ω,RG=5.1Ω 2
Turn-on rise time tr 85 nS VGS=4.5V,VDS=10V, RL=5.1Ω,RG=5.1Ω 2
Turn-off delay time td(off) 65 nS VGS=4.5V,VDS=10V, RL=5.1Ω,RG=5.1Ω 2
Turn-off fall time tf 27 nS VGS=4.5V,VDS=10V, RL=5.1Ω,RG=5.1Ω 2

CAD (KiCad official)

  • Symbol: BSS214NW-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: bss214nw-hxy-etched.step / bss214nw-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bss214nw-hxy.step / bss214nw-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 832ad40e21586bd9, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF