component
BSS214NH6327
Public Made by Adomby adom
Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBSS214NH6327
Infineon Technologies · MOSFETs · SOT-23
BSS214NH6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; enhancement-mode N-channel gate, super logic level rated for 2.5 V (RDS(on) max 250 mΩ at VGS=2.5 V), absolute maximum VGS ±12 V. |
| 2 | S | passive | Source; connected to the body diode anode, with diode continuous forward current IS of 0.5 A (pulsed 6 A). |
| 3 | D | passive | Drain; VDS 20 V, continuous drain current 1.5 A at TA=25 °C (6 A pulsed), RDS(on) max 140 mΩ at VGS=4.5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 1.5 | A | TA=25 °C | 1 | ||
| Continuous drain current | ID | 1.2 | A | TA=70 °C | 1 | ||
| Pulsed drain current | ID,pulse | 6 | A | TA=25 °C | 1 | ||
| Avalanche energy, single pulse | EAS | 3.7 | mJ | ID=1.5 A, RGS=25 Ω | 1 | ||
| Reverse diode dv/dt | dv/dt | 6 | kV/µs | ID=1.5 A, VDS=16 V, di/dt=200 A/µs, Tj,max=150 °C | 1 | ||
| Gate source voltage | VGS | -12 | 12 | V | 1 | ||
| Power dissipation | Ptot | 0.5 | W | TA=25 °C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Soldering temperature | 260 | °C | 1 | ||||
| Thermal resistance, junction - ambient | RthJA | 250 | K/W | minimal footprint | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | 20 | V | VGS=0 V, ID=250 µA | 2 | ||
| Gate threshold voltage | VGS(th) | 0.7 | 0.95 | 1.2 | V | VDS=VGS, ID=3.7 µA | 2 |
| Drain-source leakage current | IDSS | 1 | µA | VDS=20 V, VGS=0 V, Tj=25 °C | 2 | ||
| Drain-source leakage current | IDSS | 100 | µA | VDS=20 V, VGS=0 V, Tj=150 °C | 2 | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=12 V, VDS=0 V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 175 | 250 | mΩ | VGS=2.5 V, ID=0.7 A | 2 | |
| Drain-source on-state resistance | RDS(on) | 106 | 140 | mΩ | VGS=4.5 V, ID=1.5 A | 2 | |
| Input capacitance | Ciss | 107 | 143 | pF | VGS=0 V, VDS=10 V, f=1 MHz | 3 | |
| Output capacitance | Coss | 46 | 62 | pF | VGS=0 V, VDS=10 V, f=1 MHz | 3 | |
| Diode continuous forward current | IS | 0.5 | A | 3 | |||
| Diode pulse current | IS,pulse | 6 | A | 3 | |||
| Diode forward voltage | VSD | 0.8 | 1.1 | V | VGS=0 V, IF=1.5 A, Tj=25 °C | 3 | |
| Transconductance | gfs | 4 | S | /VDS/>2/ID/RDS(on)max, ID=1.2 A | 2 | ||
| Reverse transfer capacitance | Crss | 6 | pF | VGS=0 V, VDS=10 V, f=1 MHz | 3 | ||
| Turn-on delay time | td(on) | 4.1 | ns | VDD=10 V, VGS=4.5 V, ID=1.5 A, RG=6 Ω | 3 | ||
| Rise time | tr | 7.8 | ns | VDD=10 V, VGS=4.5 V, ID=1.5 A, RG=6 Ω | 3 | ||
| Turn-off delay time | td(off) | 6.8 | ns | VDD=10 V, VGS=4.5 V, ID=1.5 A, RG=6 Ω | 3 | ||
| Fall time | tf | 1.4 | ns | VDD=10 V, VGS=4.5 V, ID=1.5 A, RG=6 Ω | 3 | ||
| Gate to source charge | Qgs | 0.24 | nC | VDD=10 V, ID=1.5 A, VGS=0 to 5 V | 3 | ||
| Gate to drain charge | Qgd | 0.2 | nC | VDD=10 V, ID=1.5 A, VGS=0 to 5 V | 3 | ||
| Gate charge total | Qg | 0.8 | nC | VDD=10 V, ID=1.5 A, VGS=0 to 5 V | 3 | ||
| Gate plateau voltage | Vplateau | 2.2 | V | VDD=10 V, ID=1.5 A, VGS=0 to 5 V | 3 | ||
| Reverse recovery time | trr | 8.4 | ns | VR=10 V, IF=1.5 A, diF/dt=100 A/µs, TA=25 °C | 3 | ||
| Reverse recovery charge | Qrr | 1.7 | nC | VR=10 V, IF=1.5 A, diF/dt=100 A/µs, TA=25 °C | 3 | ||
| Input capacitance (typ) | Ciss | 107 | pF | VGS=0 V, VDS=10 V, f=1 MHz | 3 | ||
| Output capacitance (typ) | Coss | 46 | pF | VGS=0 V, VDS=10 V, f=1 MHz | 3 |
CAD (KiCad official)
- Symbol:
BSS214NH6327 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bss214nh6327-etched.step/bss214nh6327-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss214nh6327.step/bss214nh6327.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
dd8366add2c4742f, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).