component
BSS209PWH6327
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Infineon Technologies MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBSS209PWH6327
Infineon Technologies · MOSFETs · SOT-323
BSS209PWH6327 from Infineon Technologies, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate pin of the P-channel enhancement-mode MOSFET, rated for VGS of ±12 V with a threshold of -0.6 V min to -1.2 V max at ID=3.5 µA. |
| 2 | S | passive | Source pin of the P-channel MOSFET, with a continuous drain current of -0.63 A at TC=25 °C and a diode continuous forward current of -0.7 A. |
| 3 | D | passive | Drain pin of the P-channel MOSFET, with a drain-source voltage of -20 V and an RDS(on) max of 550 mΩ at VGS=4.5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-323 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | -20 | V | VGS=0 V, ID=-250µA | 2 | ||
| Gate threshold voltage | VGS(th) | -0.6 | -0.9 | -1.2 | V | VDS=VGS, ID=3.5 µA | 2 |
| Zero gate voltage drain current | IDSS | -0.1 | -1 | µA | VDS=-20 V, VGS=0 V, Tj=25 °C | 2 | |
| Zero gate voltage drain current | IDSS | -10 | -100 | µA | VDS=-20 V, VGS=0 V, Tj=150 °C | 2 | |
| Gate-source leakage current | IGSS | -10 | -100 | nA | VGS=12 V, VDS=0 V | 2 | |
| Drain-source on-state resistance | RDS(on) | 581 | 900 | mΩ | VGS=2.5 V, ID=0.46 A | 2 | |
| Drain-source on-state resistance | RDS(on) | 379 | 550 | mΩ | VGS=4.5 V, ID=0.63 A | 2 | |
| Transconductance | gfs | 0.87 | 1.74 | S | /VDS/>2/ID/RDS(on)max, ID=0.46 A | 2 | |
| Thermal resistance, junction - soldering point | RthJS | 120 | K/W | 2 | |||
| Thermal resistance, junction - ambient, minimal footprint | RthJA | 420 | K/W | SMD version, device on PCB, minimal footprint | 2 | ||
| Thermal resistance, junction - ambient, 6 cm2 cooling area | RthJA | 350 | K/W | SMD version, device on PCB, 6 cm2 cooling area | 2 | ||
| Input capacitance | Ciss | 87 | 115 | pF | VGS=0 V, VDS=-15 V, f=1 MHz | 3 | |
| Output capacitance | Coss | 35 | 46.7 | pF | VGS=0 V, VDS=-15 V, f=1 MHz | 3 | |
| Reverse transfer capacitance | Crss | 30 | 45 | pF | VGS=0 V, VDS=-15 V, f=1 MHz | 3 | |
| Turn-on delay time | td(on) | 2.6 | 4 | ns | VDD=-10 V, VGS=-4.5 V, ID=0.58 A, RG=6 Ω | 3 | |
| Rise time | tr | 7 | 11 | ns | VDD=-10 V, VGS=-4.5 V, ID=0.58 A, RG=6 Ω | 3 | |
| Fall time | tf | 4.6 | 6.9 | ns | VDD=-10 V, VGS=-4.5 V, ID=0.58 A, RG=6 Ω | 3 | |
| Gate to source charge | Qgs | -0.18 | -0.24 | nC | VDD=10 V, ID=0.58 A, VGS=0 to 4.5 V | 3 | |
| Gate to drain charge | Qgd | -0.46 | -0.7 | nC | VDD=10 V, ID=0.58 A, VGS=0 to 4.5 V | 3 | |
| Gate charge total | Qg | -1 | -1.3 | nC | VDD=10 V, ID=0.58 A, VGS=0 to 4.5 V | 3 | |
| Diode continuous forward current | IS | -0.7 | A | TC=25 °C | 3 | ||
| Diode direct current, pulsed | ISM | -4 | A | TC=25 °C | 3 | ||
| Diode forward voltage | VSD | -0.92 | -0.88 | V | VGS=0 V, IF=-0.58 A, Tj=25 °C | 3 | |
| Reverse recovery time | trr | 9 | 11.2 | ns | VR=10 V, IF=/IS/, diF/dt=100 A/µs | 3 | |
| Reverse recovery charge | Qrr | 1.27 | 1.59 | nC | VR=10 V, IF=/IS/, diF/dt=100 A/µs | 3 | |
| Gate plateau voltage | Vplateau | -2 | V | 3 | |||
| Gate source voltage | VGS | -12 | 12 | V | 1 | ||
| Power dissipation | Ptot | 0.3 | W | TA=25 °C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Soldering temperature | 260 | °C | 1 | ||||
| Drain-source voltage | VDS | -20 | V | Product summary | 1 | ||
| Drain-source on-resistance max (product summary) | RDS(on),max | 550 | mΩ | 1 |
CAD (KiCad official)
- Symbol:
BSS209PWH6327 - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
bss209pwh6327-etched.step/bss209pwh6327-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss209pwh6327.step/bss209pwh6327.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
c96283924a3cd3a0, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).