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BSS169IXTSA1
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Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BSS169IXTSA1
Infineon Technologies · MOSFETs · SOT-23
BSS169IXTSA1 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel depletion-mode MOSFET, with a maximum gate-source voltage of ±20 V and a gate threshold voltage VGS(th) of -2.9 V to -1.8 V at VDS=3 V, ID=50 µA. |
| 2 | Source | passive | Source terminal of the MOSFET, with continuous drain current up to 0.19 A at TA=25 °C and a pulsed drain current of 0.76 A. |
| 3 | Drain | passive | Drain terminal of the MOSFET, with a drain-source breakdown voltage of at least 100 V and a maximum on-state resistance RDS(on) of 12 Ω at VGS=0 V, ID=0.19 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
BSS169IXTSA1 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bss169ixtsa1-etched.step/bss169ixtsa1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss169ixtsa1.step/bss169ixtsa1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (10 pp, sha256
ec5553a4b7167944, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BSS169IXTSA1
**Infineon Technologies** · MOSFETs · SOT-23
BSS169IXTSA1 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel depletion-mode MOSFET, with a maximum gate-source voltage of ±20 V and a gate threshold voltage VGS(th) of -2.9 V to -1.8 V at VDS=3 V, ID=50 µA. |
| 2 | Source | passive | Source terminal of the MOSFET, with continuous drain current up to 0.19 A at TA=25 °C and a pulsed drain current of 0.76 A. |
| 3 | Drain | passive | Drain terminal of the MOSFET, with a drain-source breakdown voltage of at least 100 V and a maximum on-state resistance RDS(on) of 12 Ω at VGS=0 V, ID=0.19 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## CAD (KiCad official)
- Symbol: `BSS169IXTSA1`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `bss169ixtsa1-etched.step` / `bss169ixtsa1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bss169ixtsa1.step` / `bss169ixtsa1.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](docs/bss169ixtsa1-datasheet.pdf) (10 pp, sha256 `ec5553a4b7167944`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bss169ixtsa1-datasheet.pdf)