component

BSS169H6327

Public Made by Adom

by adom

Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsbss169h6327factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs bss169h6327: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
viewers bss169h6327: viewers · Ray 1mo ago
bss169h6327-etched.fit.json bss169h6327: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
bss169h6327-etched.glb bss169h6327: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
bss169h6327-etched.step bss169h6327: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
bss169h6327.glb Publish 0.1.0 · Ray 1mo ago
bss169h6327.kicad_mod Publish 0.1.0 · Ray 1mo ago
bss169h6327.kicad_sym Publish 0.1.0 · Ray 1mo ago
bss169h6327.lbr Publish 0.1.0 · Ray 1mo ago
bss169h6327.step Publish 0.1.0 · Ray 1mo ago
package.json bss169h6327: component.models_3d pose record per STEP (Z-up, seated z=0, pad-centre origin, identity binding) · Ray 1mo ago
page.json bss169h6327: specified limits as data (metadata.characteristics, 31 rows from the datasheet) · Ray 24d ago
README.md bss169h6327: specified limits as data (metadata.characteristics, 31 rows from the datasheet) · Ray 24d ago

BSS169H6327

Infineon Technologies · MOSFETs · SOT-23

BSS169H6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal; VGS threshold −2.9 V min to −1.8 V max (VDS=3 V, ID=50 µA); VGS rating ±20 V.
2 SOURCE passive Source terminal; body-diode forward voltage VSD 0.79 V typ / 1.2 V max (VGS=−10 V, IF=0.17 A, Tj=25 °C).
3 DRAIN passive Drain terminal; VDS(max)=100 V; continuous drain current ID=0.17 A (TA=25 °C); RDS(on) max 12 Ω (VGS=0 V, ID=0.05 A); IDSS min 90 mA (VGS=0 V, VDS=10 V).

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 0.17 A TA=25 °C 1
Continuous drain current ID 0.14 A TA=70 °C 1
Pulsed drain current ID,pulse 0.68 A TA=25 °C 1
Reverse diode dv/dt dv/dt 6 kV/µs ID=0.17 A, VDS=80 V, di/dt=200 A/µs, Tj,max=150 °C 1
Gate source voltage VGS -20 20 V 1
Power dissipation Ptot 0.36 W TA=25 °C 1
Operating and storage temperature Tj, Tstg -55 150 °C 1
Thermal resistance, junction - ambient RthJA 350 K/W minimal footprint 2
Drain-source breakdown voltage V(BR)DSS 100 V VGS=-10 V, ID=250 µA 2
Gate threshold voltage VGS(th) -2.9 -2.2 -1.8 V VDS=3 V, ID=50 µA 2
Drain-source cutoff current ID(off) 0.1 µA VDS=100 V, VGS=-10 V, Tj=25 °C 2
Drain-source cutoff current ID(off) 10 µA VDS=100 V, VGS=-10 V, Tj=125 °C 2
Gate-source leakage current IGSS 10 nA VGS=20 V, VDS=0 V 2
On-state drain current IDSS 90 mA VGS=0 V, VDS=10 V 2
Drain-source on-state resistance RDS(on) 5.3 12 Ω VGS=0 V, ID=0.05 A 2
Drain-source on-state resistance RDS(on) 2.9 6 Ω VGS=10 V, ID=0.17 A 2
Transconductance gfs 0.1 0.19 S /VDS/>2/ID/RDS(on)max, ID=0.14 A 2
Input capacitance Ciss 51 68 pF VGS=-10 V, VDS=25 V, f=1 MHz 3
Output capacitance Coss 9 13 pF VGS=-10 V, VDS=25 V, f=1 MHz 3
Turn-on delay time td(on) 2.9 4.2 ns VDD=50 V, VGS=-3…7 V, ID=0.12 A, RG=6 Ω 3
Rise time tr 2.7 4 ns VDD=50 V, VGS=-3…7 V, ID=0.12 A, RG=6 Ω 3
Turn-off delay time td(off) 11 17 ns VDD=50 V, VGS=-3…7 V, ID=0.12 A, RG=6 Ω 3
Fall time tf 27 40 ns VDD=50 V, VGS=-3…7 V, ID=0.12 A, RG=6 Ω 3
Gate to source charge Qgs 0.12 0.16 nC VDD=80 V, ID=0.12 A, VGS=-3 to 7 V 3
Gate to drain charge Qgd 0.9 1.4 nC VDD=80 V, ID=0.12 A, VGS=-3 to 7 V 3
Gate charge total Qg 2.1 2.8 nC VDD=80 V, ID=0.12 A, VGS=-3 to 7 V 3
Diode continuous forward current IS 0.17 A 3
Diode pulse current IS,pulse 0.68 A 3
Diode forward voltage VSD 0.79 1.2 V VGS=-10 V, IF=0.17 A, Tj=25 °C 3
Reverse recovery time trr 20.5 25.6 ns VR=50 V, IF=0.12 A, diF/dt=100 A/µs, TA=25 °C 3
Reverse recovery charge Qrr 9.7 12.1 nC VR=50 V, IF=0.12 A, diF/dt=100 A/µs, TA=25 °C 3

CAD (KiCad official)

  • Symbol: BSS169H6327
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bss169h6327-etched.step / bss169h6327-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bss169h6327.step / bss169h6327.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 701ab4a06b0c85e1, retrieved 2026-09-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-sonnet-4-6 (text+vision), consensus claude-opus-4-7 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF