component
BSS169H6327
Public Made by Adomby adom
Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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bss169h6327: specified limits as data (metadata.characteristics, 31 rows from the datasheet)
2 files changed
+417
README.md+38@@ -21,6 +21,44 @@ BSS169H6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Continuous drain current | ID | | | 0.17 | A | TA=25 °C | 1 |+| Continuous drain current | ID | | | 0.14 | A | TA=70 °C | 1 |+| Pulsed drain current | ID,pulse | | | 0.68 | A | TA=25 °C | 1 |+| Reverse diode dv/dt | dv/dt | | | 6 | kV/µs | ID=0.17 A, VDS=80 V, di/dt=200 A/µs, Tj,max=150 °C | 1 |+| Gate source voltage | VGS | -20 | | 20 | V | | 1 |+| Power dissipation | Ptot | | | 0.36 | W | TA=25 °C | 1 |+| Operating and storage temperature | Tj, Tstg | -55 | | 150 | °C | | 1 |+| Thermal resistance, junction - ambient | RthJA | | | 350 | K/W | minimal footprint | 2 |+| Drain-source breakdown voltage | V(BR)DSS | 100 | | | V | VGS=-10 V, ID=250 µA | 2 |+| Gate threshold voltage | VGS(th) | -2.9 | -2.2 | -1.8 | V | VDS=3 V, ID=50 µA | 2 |+| Drain-source cutoff current | ID(off) | | | 0.1 | µA | VDS=100 V, VGS=-10 V, Tj=25 °C | 2 |+| Drain-source cutoff current | ID(off) | | | 10 | µA | VDS=100 V, VGS=-10 V, Tj=125 °C | 2 |+| Gate-source leakage current | IGSS | | | 10 | nA | VGS=20 V, VDS=0 V | 2 |+| On-state drain current | IDSS | 90 | | | mA | VGS=0 V, VDS=10 V | 2 |+| Drain-source on-state resistance | RDS(on) | | 5.3 | 12 | Ω | VGS=0 V, ID=0.05 A | 2 |+| Drain-source on-state resistance | RDS(on) | | 2.9 | 6 | Ω | VGS=10 V, ID=0.17 A | 2 |+| Transconductance | gfs | 0.1 | 0.19 | | S | /VDS/>2/ID/RDS(on)max, ID=0.14 A | 2 |+| Input capacitance | Ciss | | 51 | 68 | pF | VGS=-10 V, VDS=25 V, f=1 MHz | 3 |+| Output capacitance | Coss | | 9 | 13 | pF | VGS=-10 V, VDS=25 V, f=1 MHz | 3 |+| Turn-on delay time | td(on) | | 2.9 | 4.2 | ns | VDD=50 V, VGS=-3…7 V, ID=0.12 A, RG=6 Ω | 3 |+| Rise time | tr | | 2.7 | 4 | ns | VDD=50 V, VGS=-3…7 V, ID=0.12 A, RG=6 Ω | 3 |+| Turn-off delay time | td(off) | | 11 | 17 | ns | VDD=50 V, VGS=-3…7 V, ID=0.12 A, RG=6 Ω | 3 |+| Fall time | tf | | 27 | 40 | ns | VDD=50 V, VGS=-3…7 V, ID=0.12 A, RG=6 Ω | 3 |+| Gate to source charge | Qgs | | 0.12 | 0.16 | nC | VDD=80 V, ID=0.12 A, VGS=-3 to 7 V | 3 |+| Gate to drain charge | Qgd | | 0.9 | 1.4 | nC | VDD=80 V, ID=0.12 A, VGS=-3 to 7 V | 3 |+| Gate charge total | Qg | | 2.1 | 2.8 | nC | VDD=80 V, ID=0.12 A, VGS=-3 to 7 V | 3 |+| Diode continuous forward current | IS | | | 0.17 | A | | 3 |+| Diode pulse current | IS,pulse | | | 0.68 | A | | 3 |+| Diode forward voltage | VSD | | 0.79 | 1.2 | V | VGS=-10 V, IF=0.17 A, Tj=25 °C | 3 |+| Reverse recovery time | trr | | 20.5 | 25.6 | ns | VR=50 V, IF=0.12 A, diF/dt=100 A/µs, TA=25 °C | 3 |+| Reverse recovery charge | Qrr | | 9.7 | 12.1 | nC | VR=50 V, IF=0.12 A, diF/dt=100 A/µs, TA=25 °C | 3 |+ ## CAD (KiCad official) - Symbol: `BSS169H6327`
page.json+379@@ -135,6 +135,385 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "701ab4a06b0c85e1",+ "rows": [+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.17,+ "conditions": "TA=25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.14,+ "conditions": "TA=70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed drain current",+ "symbol": "ID,pulse",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.68,+ "conditions": "TA=25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Reverse diode dv/dt",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "kV/µs",+ "min": null,+ "typ": null,+ "max": 6,+ "conditions": "ID=0.17 A, VDS=80 V, di/dt=200 A/µs, Tj,max=150 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.36,+ "conditions": "TA=25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating and storage temperature",+ "symbol": "Tj, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction - ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 350,+ "conditions": "minimal footprint",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "VGS=-10 V, ID=250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -2.9,+ "typ": -2.2,+ "max": -1.8,+ "conditions": "VDS=3 V, ID=50 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source cutoff current",+ "symbol": "ID(off)",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 0.1,+ "conditions": "VDS=100 V, VGS=-10 V, Tj=25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source cutoff current",+ "symbol": "ID(off)",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VDS=100 V, VGS=-10 V, Tj=125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VGS=20 V, VDS=0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-state drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "mA",+ "min": 90,+ "typ": null,+ "max": null,+ "conditions": "VGS=0 V, VDS=10 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 5.3,+ "max": 12,+ "conditions": "VGS=0 V, ID=0.05 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 2.9,+ "max": 6,+ "conditions": "VGS=10 V, ID=0.17 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": 0.1,+ "typ": 0.19,+ "max": null,+ "conditions": "|VDS|>2|ID|RDS(on)max, ID=0.14 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 51,+ "max": 68,+ "conditions": "VGS=-10 V, VDS=25 V, f=1 MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Output capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 9,+ "max": 13,+ "conditions": "VGS=-10 V, VDS=25 V, f=1 MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-on delay time",+ "symbol": "td(on)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 2.9,+ "max": 4.2,+ "conditions": "VDD=50 V, VGS=-3…7 V, ID=0.12 A, RG=6 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Rise time",+ "symbol": "tr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 2.7,+ "max": 4,+ "conditions": "VDD=50 V, VGS=-3…7 V, ID=0.12 A, RG=6 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-off delay time",+ "symbol": "td(off)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 11,+ "max": 17,+ "conditions": "VDD=50 V, VGS=-3…7 V, ID=0.12 A, RG=6 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Fall time",+ "symbol": "tf",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 27,+ "max": 40,+ "conditions": "VDD=50 V, VGS=-3…7 V, ID=0.12 A, RG=6 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate to source charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 0.12,+ "max": 0.16,+ "conditions": "VDD=80 V, ID=0.12 A, VGS=-3 to 7 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate to drain charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 0.9,+ "max": 1.4,+ "conditions": "VDD=80 V, ID=0.12 A, VGS=-3 to 7 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate charge total",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 2.1,+ "max": 2.8,+ "conditions": "VDD=80 V, ID=0.12 A, VGS=-3 to 7 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode continuous forward current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.17,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode pulse current",+ "symbol": "IS,pulse",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.68,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.79,+ "max": 1.2,+ "conditions": "VGS=-10 V, IF=0.17 A, Tj=25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 20.5,+ "max": 25.6,+ "conditions": "VR=50 V, IF=0.12 A, diF/dt=100 A/µs, TA=25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 9.7,+ "max": 12.1,+ "conditions": "VR=50 V, IF=0.12 A, diF/dt=100 A/µs, TA=25 °C",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],