component
BSS138NH6433
Public Made by Adomby adom
Infineon Technologies MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BSS138NH6433
Infineon Technologies · MOSFETs · SOT-23-3
BSS138NH6433 from Infineon Technologies, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate pin of the N-channel enhancement-mode MOSFET, with a maximum gate-source voltage of ±20 V and a gate threshold of 0.6 to 1.4 V. |
| 2 | S | passive | Source pin of the MOSFET, carrying up to 0.23 A continuous drain current at TA=25 °C. |
| 3 | D | passive | Drain pin of the MOSFET, rated for 60 V drain-source voltage, 0.23 A continuous current and 0.92 A pulsed current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 60 | V | VGS= 0 V, ID=250 µA | 2 | ||
| Gate threshold voltage | VGS(th) | 0.6 | 1 | 1.4 | V | VGS=VDS, ID=26 µA | 2 |
| Drain-source leakage current, Tj=25 °C | I D (off) | 0.1 | µA | VDS=60 V, VGS=0 V, Tj=25 °C | 2 | ||
| Drain-source leakage current, Tj=150 °C | I D (off) | 5 | µA | VDS=60 V, VGS=0 V, Tj=150 °C | 2 | ||
| Gate-source leakage current | I GSS | 1 | 10 | nA | VGS=20 V, VDS=0 V | 2 | |
| Drain-source on-state resistance | R DS(on) | 3.3 | 4 | Ω | VGS=4.5 V, ID=0.03 A | 2 | |
| Drain-source on-state resistance | R DS(on) | 3.5 | 6 | Ω | VGS=4.5 V, ID=0.19 A | 2 | |
| Drain-source on-state resistance | R DS(on) | 2.2 | 3.5 | Ω | VGS=10 V, ID=0.23 A | 2 | |
| Transconductance | g fs | 0.1 | 0.2 | S | /VDS/>2/ID/RDS(on)max, ID=0.18 A | 2 | |
| Input capacitance | C iss | 32 | 41 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 | |
| Output capacitance | C oss | 7.2 | 9.5 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 | |
| Reverse transfer capacitance | C rss | 2.8 | 3.8 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 | |
| Turn-on delay time | t d(on) | 2.3 | 3.5 | ns | VDD=30 V, VGS=10 V, ID=0.23 A, RG=6 Ω | 3 | |
| Rise time | t r | 3 | 4.5 | ns | VDD=30 V, VGS=10 V, ID=0.23 A, RG=6 Ω | 3 | |
| Turn-off delay time | t d(off) | 6.7 | 10 | ns | VDD=30 V, VGS=10 V, ID=0.23 A, RG=6 Ω | 3 | |
| Fall time | t f | 8.2 | 12.3 | ns | VDD=30 V, VGS=10 V, ID=0.23 A, RG=6 Ω | 3 | |
| Gate to source charge | Q gs | 0.1 | 0.14 | nC | VDD=48 V, ID=0.23 A, VGS=0 to 10 V | 3 | |
| Gate to drain charge | Q gd | 0.3 | 0.4 | nC | VDD=48 V, ID=0.23 A, VGS=0 to 10 V | 3 | |
| Gate charge total | Q g | 1 | 1.4 | nC | VDD=48 V, ID=0.23 A, VGS=0 to 10 V | 3 | |
| Diode continuous forward current | I S | 0.23 | A | 3 | |||
| Diode pulse current | I S,pulse | 0.92 | A | 3 | |||
| Diode forward voltage | VSD | 0.83 | 1.2 | V | VGS=0 V, IF=0.23 A, Tj=25 °C | 3 | |
| Reverse recovery time | t rr | 9.1 | 14.5 | ns | VR=30 V, IF=0.23 A, diF/dt=100 A/µs, TA=25 °C | 3 | |
| Reverse recovery charge | Q rr | 3.3 | 5 | nC | VR=30 V, IF=0.23 A, diF/dt=100 A/µs, TA=25 °C | 3 | |
| Continuous drain current, TA=25 °C | I D | 0.23 | A | TA=25 °C | 1 | ||
| Continuous drain current, TA=70 °C | I D | 0.18 | A | TA=70 °C | 1 | ||
| Pulsed drain current | I D,pulse | 0.92 | A | TA=25 °C | 1 | ||
| Reverse diode dv/dt | dv/dt | 6 | kV/µs | ID=0.23 A, VDS=48 V, di/dt=200 A/µs, Tj,max=150 °C | 1 | ||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Power dissipation | Ptot | 0.36 | W | TA=25 °C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Thermal resistance, junction - minimal footprint | R thJA | 350 | K/W | junction - minimal footprint | 2 |
CAD (KiCad official)
- Symbol:
BSS138NH6433 - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
bss138nh6433-etched.step/bss138nh6433-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss138nh6433.step/bss138nh6433.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
7bfa04fa9f7d97fd, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BSS138NH6433
**Infineon Technologies** · MOSFETs · SOT-23-3
BSS138NH6433 from Infineon Technologies, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate pin of the N-channel enhancement-mode MOSFET, with a maximum gate-source voltage of ±20 V and a gate threshold of 0.6 to 1.4 V. |
| 2 | S | passive | Source pin of the MOSFET, carrying up to 0.23 A continuous drain current at TA=25 °C. |
| 3 | D | passive | Drain pin of the MOSFET, rated for 60 V drain-source voltage, 0.23 A continuous current and 0.92 A pulsed current. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 60 | | | V | VGS= 0 V, ID=250 µA | 2 |
| Gate threshold voltage | VGS(th) | 0.6 | 1 | 1.4 | V | VGS=VDS, ID=26 µA | 2 |
| Drain-source leakage current, Tj=25 °C | I D (off) | | | 0.1 | µA | VDS=60 V, VGS=0 V, Tj=25 °C | 2 |
| Drain-source leakage current, Tj=150 °C | I D (off) | | | 5 | µA | VDS=60 V, VGS=0 V, Tj=150 °C | 2 |
| Gate-source leakage current | I GSS | | 1 | 10 | nA | VGS=20 V, VDS=0 V | 2 |
| Drain-source on-state resistance | R DS(on) | | 3.3 | 4 | Ω | VGS=4.5 V, ID=0.03 A | 2 |
| Drain-source on-state resistance | R DS(on) | | 3.5 | 6 | Ω | VGS=4.5 V, ID=0.19 A | 2 |
| Drain-source on-state resistance | R DS(on) | | 2.2 | 3.5 | Ω | VGS=10 V, ID=0.23 A | 2 |
| Transconductance | g fs | 0.1 | 0.2 | | S | /VDS/>2/ID/RDS(on)max, ID=0.18 A | 2 |
| Input capacitance | C iss | | 32 | 41 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 |
| Output capacitance | C oss | | 7.2 | 9.5 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 |
| Reverse transfer capacitance | C rss | | 2.8 | 3.8 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 |
| Turn-on delay time | t d(on) | | 2.3 | 3.5 | ns | VDD=30 V, VGS=10 V, ID=0.23 A, RG=6 Ω | 3 |
| Rise time | t r | | 3 | 4.5 | ns | VDD=30 V, VGS=10 V, ID=0.23 A, RG=6 Ω | 3 |
| Turn-off delay time | t d(off) | | 6.7 | 10 | ns | VDD=30 V, VGS=10 V, ID=0.23 A, RG=6 Ω | 3 |
| Fall time | t f | | 8.2 | 12.3 | ns | VDD=30 V, VGS=10 V, ID=0.23 A, RG=6 Ω | 3 |
| Gate to source charge | Q gs | | 0.1 | 0.14 | nC | VDD=48 V, ID=0.23 A, VGS=0 to 10 V | 3 |
| Gate to drain charge | Q gd | | 0.3 | 0.4 | nC | VDD=48 V, ID=0.23 A, VGS=0 to 10 V | 3 |
| Gate charge total | Q g | | 1 | 1.4 | nC | VDD=48 V, ID=0.23 A, VGS=0 to 10 V | 3 |
| Diode continuous forward current | I S | | | 0.23 | A | | 3 |
| Diode pulse current | I S,pulse | | | 0.92 | A | | 3 |
| Diode forward voltage | VSD | | 0.83 | 1.2 | V | VGS=0 V, IF=0.23 A, Tj=25 °C | 3 |
| Reverse recovery time | t rr | | 9.1 | 14.5 | ns | VR=30 V, IF=0.23 A, diF/dt=100 A/µs, TA=25 °C | 3 |
| Reverse recovery charge | Q rr | | 3.3 | 5 | nC | VR=30 V, IF=0.23 A, diF/dt=100 A/µs, TA=25 °C | 3 |
| Continuous drain current, TA=25 °C | I D | | | 0.23 | A | TA=25 °C | 1 |
| Continuous drain current, TA=70 °C | I D | | | 0.18 | A | TA=70 °C | 1 |
| Pulsed drain current | I D,pulse | | | 0.92 | A | TA=25 °C | 1 |
| Reverse diode dv/dt | dv/dt | | | 6 | kV/µs | ID=0.23 A, VDS=48 V, di/dt=200 A/µs, Tj,max=150 °C | 1 |
| Gate source voltage | VGS | -20 | | 20 | V | | 1 |
| Power dissipation | Ptot | | | 0.36 | W | TA=25 °C | 1 |
| Operating and storage temperature | Tj, Tstg | -55 | | 150 | °C | | 1 |
| Thermal resistance, junction - minimal footprint | R thJA | | | 350 | K/W | junction - minimal footprint | 2 |
## CAD (KiCad official)
- Symbol: `BSS138NH6433`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files: `bss138nh6433-etched.step` / `bss138nh6433-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bss138nh6433.step` / `bss138nh6433.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588918221231558656) (9 pp, sha256 `7bfa04fa9f7d97fd`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bss138nh6433-datasheet.pdf)