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BSS138NH6327-VB

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VBsemi Elec MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsbss138nh6327-vbfactory-2.0.0extractor-text

Verified BSS138NH6327-VB

by Ray · last 13 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

13 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • •array (skip): not an array of element pairs
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: BSS138NH6327-VB · SOT-23 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 8-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOT-23
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-vqj0muax/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.6)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓viewers: viewers/footprint.html 17 kB, viewers/symbol.html 8 kB
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ bss138nh6327-vb.kicad_sym✓ bss138nh6327-vb.kicad_mod✓ bss138nh6327-vb.step
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BSS138NH6327-VB

VBsemi Elec · MOSFETs · SOT-23

BSS138NH6327-VB from VBsemi Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.

Pinout

Pin Name Type Function
1 G input Gate; drives the N-channel MOSFET with a maximum gate-source voltage of ±20 V and a typical threshold of 2 V.
2 S passive Source terminal of the N-channel MOSFET, with continuous drain current up to 250 mA at TA = 25 °C.
3 D passive Drain terminal; the drain-source voltage is rated at 60 V and pulsed drain current at 800 mA.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS 60 V VGS = 0 V, ID = 10 µA 2
Gate-Threshold Voltage VGS(th) 1 2.5 V VDS = VGS, ID = 250 µA 2
Gate-Body Leakage IGSS -10 10 µA VDS = 0 V, VGS = ± 20 V 2
Gate-Body Leakage IGSS 1 µA VDS = 0 V, VGS = ± 15 V 2
Gate-Body Leakage IGSS -150 150 nA VDS = 0 V, VGS = ± 10 V 2
Gate-Body Leakage IGSS -1000 1000 nA VDS = 0 V, VGS = ± 10 V, TJ = 85 °C 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 5 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 500 µA VDS = 60 V, VGS = 0 V, TJ = 125 °C 2
On-State Drain Current ID(on) 500 mA VGS = 10 V, VDS = 7.5 V 2
On-State Drain Current ID(on) 300 mA VGS = 4.5 V, VDS = 10 V 2
Drain-Source On-Resistance RDS(on) 2.8 Ω VGS = 10 V, ID = 200 mA 2
Drain-Source On-Resistance RDS(on) 3.1 Ω VGS = 4.5 V, ID = 150 mA 2
Forward Transconductance gfs 100 mS VDS = 10 V, ID = 100 mA 2
Diode Forward Voltage VSD 1.3 V IS = 100 mA, VGS = 0 V 2
Total Gate Charge Qg 0.4 0.6 nC VDS = 10 V, VGS = 4.5 V, ID ≅ 150 mA 2
Turn-On Time td(on) 20 ns VDD = 30 V, RL = 150 Ω, ID ≅ 200 mA, VGEN = 10 V, RG = 10 Ω 2
Turn-Off Time td(off) 30 ns VDD = 30 V, RL = 150 Ω, ID ≅ 200 mA, VGEN = 10 V, RG = 10 Ω 2
Drain-Source Voltage VDS 60 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Continuous Drain Current ID 250 mA TJ = 150 °C, TA = 25 °C 1
Continuous Drain Current ID 150 mA TJ = 150 °C, TA = 100 °C 1
Pulsed Drain Current IDM 800 mA 1
Power Dissipation PD 0.3 W TA = 25 °C 1
Power Dissipation PD 0.13 W TA = 100 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 350 °C/W Surface mounted on FR4 board 1
Input Capacitance Ciss 25 pF VDS = 25 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 5 pF VDS = 25 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 2 pF VDS = 25 V, VGS = 0 V, f = 1 MHz 2

CAD (land: KiCad; 3D: generated from the datasheet)

  • Symbol: BSS138NH6327-VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23, generated on the KiCad land (body 1.3 x 2.92 mm, terminals on the pads, 1.0050000000000001 mm tall, datasheet A, midpoint of min and max). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
  • 3D model files: bss138nh6327-vb-etched.step / bss138nh6327-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bss138nh6327-vb.step / bss138nh6327-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 5a139fd9f079774e, retrieved 2026-11-13, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).

Datasheet PDF