component
BSS138BKT116
Public Made by Adomby adom
ROHM Semicon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBSS138BKT116
ROHM Semicon · MOSFETs · SOT-23
BSS138BKT116 from ROHM Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the N-channel MOSFET, shared with the body diode anode and the gate ESD protection diode. |
| 2 | Gate | input | Gate terminal with ESD protection diode (up to 2kV HBM), gate-source voltage limited to ±20V, 2.5V drive, threshold 0.8 to 2.0V. |
| 3 | Drain | passive | Drain terminal of the N-channel MOSFET, rated for 60V drain-source voltage and ±400mA continuous drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain - Source voltage | VDSS | 60 | V | 1 | |||
| Continuous drain current | ID | -400 | 400 | mA | 1 | ||
| Pulsed drain current | IDP | -1.4 | 1.4 | A | Pw ≤ 10μs, Duty cycle ≤ 1% | 1 | |
| Gate - Source voltage | VGSS | -20 | 20 | V | 1 | ||
| Power dissipation | PD | 350 | mW | Mounted on a ceramic board (30mm×30mm×0.8mm) | 1 | ||
| Power dissipation | PD | 200 | mW | Mounted on a FR4 board (20mm×12mm×0.8mm，Cu pad=0.8m㎡) | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Operating junction and storage temperature range | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction - ambient | RthJA | 357 | ℃/W | Mounted on a ceramic board (30mm×30mm×0.8mm) | 2 | ||
| Thermal resistance, junction - ambient | RthJA | 625 | ℃/W | Mounted on a FR4 board (20mm×12mm×0.8mm，Cu pad=0.8m㎡) | 2 | ||
| Drain - Source breakdown voltage | V(BR)DSS | 60 | V | VGS = 0V, ID = 1mA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | μA | VDS = 60V, VGS = 0V | 2 | ||
| Gate - Source leakage current | IGSS | -10 | 10 | μA | VGS = ±20V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | 0.8 | 2 | V | VDS = VGS, ID = 10μA | 2 | |
| Static drain - source on - state resistance | RDS(on) | 0.49 | 0.68 | Ω | VGS = 10V, ID = 400mA (pulsed) | 2 | |
| Static drain - source on - state resistance | RDS(on) | 0.58 | 0.81 | Ω | VGS = 4.5V, ID = 400mA (pulsed) | 2 | |
| Static drain - source on - state resistance | RDS(on) | 1 | 4 | Ω | VGS = 2.5V, ID = 10mA (pulsed) | 2 | |
| Forward Transfer Admittance | /Yfs/ | 0.5 | S | VDS = 10V, ID = 400mA (pulsed) | 2 | ||
| Continuous forward current | IS | 0.29 | A | Ta = 25℃ | 3 | ||
| Pulse forward current | ISP | 1.4 | A | Pw ≤ 10μs, Duty cycle ≤ 1% | 3 | ||
| Forward voltage | VSD | 1.2 | V | VGS = 0V, IS = 290mA (pulsed) | 3 |
CAD (KiCad official)
- Symbol:
BSS138BKT116 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bss138bkt116-etched.step/bss138bkt116-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss138bkt116.step/bss138bkt116.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (14 pp, sha256
82ddb408f61e77d7, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).