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BSS127H6327XTSA2
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Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BSS127H6327XTSA2
Infineon Technologies · MOSFETs · SOT-23
BSS127H6327XTSA2 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; logic-level drive rated at 4.5 V, with absolute maximum gate-source voltage of ±20 V. |
| 2 | S | passive | Source terminal of the n-channel enhancement-mode MOSFET; continuous drain current is 0.021 A at TA=25 °C. |
| 3 | D | passive | Drain; drain-source breakdown voltage is 600 V minimum and RDS(on) is 500 Ω maximum at VGS=10 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current, TA=25 °C | ID | 0.021 | A | TA=25 °C | 1 | ||
| Continuous drain current, TA=70 °C | ID | 0.017 | A | TA=70 °C | 1 | ||
| Pulsed drain current | ID,pulse | 0.09 | A | TA=25 °C | 1 | ||
| Reverse diode dv/dt | dv/dt | 6 | kV/µs | ID=0.021 A, VDS=480 V, di/dt=200 A/µs, Tj,max=150 °C | 1 | ||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Power dissipation | Ptot | 0.5 | W | TA=25 °C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Junction-ambient thermal resistance, minimal footprint | RthJA | 250 | K/W | junction - minimal footprint | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | 600 | V | VGS=0 V, ID=250 µA | 2 | ||
| Gate threshold voltage | VGS(th) | 1.4 | 2 | 2.6 | V | VDS=VGS, ID=8 µA | 2 |
| Drain-source leakage current, Tj=25 °C | ID(off) | 0.1 | µA | VDS=600 V, VGS=0 V, Tj=25 °C | 2 | ||
| Drain-source leakage current, Tj=150 °C | ID(off) | 10 | µA | VDS=600 V, VGS=0 V, Tj=150 °C | 2 | ||
| Gate-source leakage current | IGSS | 10 | 100 | nA | VGS=20 V, VDS=0 V | 2 | |
| Drain-source on-state resistance, VGS=4.5 V | RDS(on) | 330 | 600 | Ω | VGS=4.5 V, ID=0.016 A | 2 | |
| Drain-source on-state resistance, VGS=10 V | RDS(on) | 310 | 500 | Ω | VGS=10 V, ID=0.016 A | 2 | |
| Transconductance | gfs | 0.007 | 0.015 | S | /VDS/>2/ID/RDS(on)max, ID=0.01 A | 2 | |
| Input capacitance | Ciss | 21 | 28 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 | |
| Output capacitance | Coss | 2.4 | 3 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 | |
| Reverse transfer capacitance | Crss | 1 | 1.5 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 | |
| Turn-on delay time | td(on) | 6.1 | 19 | ns | VDD=300 V, VGS=10 V, ID=0.01 A, RG=6 Ω | 3 | |
| Rise time | tr | 9.7 | 14.5 | ns | VDD=300 V, VGS=10 V, ID=0.01 A, RG=6 Ω | 3 | |
| Turn-off delay time | td(off) | 14 | 21 | ns | VDD=300 V, VGS=10 V, ID=0.01 A, RG=6 Ω | 3 | |
| Fall time | tf | 115 | 170 | ns | VDD=300 V, VGS=10 V, ID=0.01 A, RG=6 Ω | 3 | |
| Gate to source charge | Qgs | 0.07 | 0.1 | nC | VDD=300 V, ID=0.01 A, VGS=0 to 10 V | 3 | |
| Gate to drain charge | Qgd | 0.31 | 0.5 | nC | VDD=300 V, ID=0.01 A, VGS=0 to 10 V | 3 | |
| Gate charge total | Qg | 0.65 | 1 | nC | VDD=300 V, ID=0.01 A, VGS=0 to 10 V | 3 | |
| Diode continuous forward current | IS | 0.016 | A | 3 | |||
| Diode pulse current | IS,pulse | 0.09 | A | 3 | |||
| Diode forward voltage | VSD | 0.82 | 1.2 | V | VGS=0 V, IF=0.016 A, Tj=25 °C | 3 | |
| Reverse recovery time | trr | 160 | 240 | ns | VR=300 V, IF=0.016 A, diF/dt=100 A/µs, TA=25 °C | 3 | |
| Reverse recovery charge | Qrr | 13.2 | 19.8 | nC | VR=300 V, IF=0.016 A, diF/dt=100 A/µs, TA=25 °C | 3 |
CAD (KiCad official)
- Symbol:
BSS127H6327XTSA2 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bss127h6327xtsa2-etched.step/bss127h6327xtsa2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss127h6327xtsa2.step/bss127h6327xtsa2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
aa524b7e36027b5a, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BSS127H6327XTSA2
**Infineon Technologies** · MOSFETs · SOT-23
BSS127H6327XTSA2 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; logic-level drive rated at 4.5 V, with absolute maximum gate-source voltage of ±20 V. |
| 2 | S | passive | Source terminal of the n-channel enhancement-mode MOSFET; continuous drain current is 0.021 A at TA=25 °C. |
| 3 | D | passive | Drain; drain-source breakdown voltage is 600 V minimum and RDS(on) is 500 Ω maximum at VGS=10 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current, TA=25 °C | ID | | | 0.021 | A | TA=25 °C | 1 |
| Continuous drain current, TA=70 °C | ID | | | 0.017 | A | TA=70 °C | 1 |
| Pulsed drain current | ID,pulse | | | 0.09 | A | TA=25 °C | 1 |
| Reverse diode dv/dt | dv/dt | | | 6 | kV/µs | ID=0.021 A, VDS=480 V, di/dt=200 A/µs, Tj,max=150 °C | 1 |
| Gate source voltage | VGS | -20 | | 20 | V | | 1 |
| Power dissipation | Ptot | | | 0.5 | W | TA=25 °C | 1 |
| Operating and storage temperature | Tj, Tstg | -55 | | 150 | °C | | 1 |
| Junction-ambient thermal resistance, minimal footprint | RthJA | | | 250 | K/W | junction - minimal footprint | 2 |
| Drain-source breakdown voltage | V(BR)DSS | 600 | | | V | VGS=0 V, ID=250 µA | 2 |
| Gate threshold voltage | VGS(th) | 1.4 | 2 | 2.6 | V | VDS=VGS, ID=8 µA | 2 |
| Drain-source leakage current, Tj=25 °C | ID(off) | | | 0.1 | µA | VDS=600 V, VGS=0 V, Tj=25 °C | 2 |
| Drain-source leakage current, Tj=150 °C | ID(off) | | | 10 | µA | VDS=600 V, VGS=0 V, Tj=150 °C | 2 |
| Gate-source leakage current | IGSS | | 10 | 100 | nA | VGS=20 V, VDS=0 V | 2 |
| Drain-source on-state resistance, VGS=4.5 V | RDS(on) | | 330 | 600 | Ω | VGS=4.5 V, ID=0.016 A | 2 |
| Drain-source on-state resistance, VGS=10 V | RDS(on) | | 310 | 500 | Ω | VGS=10 V, ID=0.016 A | 2 |
| Transconductance | gfs | 0.007 | 0.015 | | S | /VDS/>2/ID/RDS(on)max, ID=0.01 A | 2 |
| Input capacitance | Ciss | | 21 | 28 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 |
| Output capacitance | Coss | | 2.4 | 3 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 |
| Reverse transfer capacitance | Crss | | 1 | 1.5 | pF | VGS=0 V, VDS=25 V, f=1 MHz | 3 |
| Turn-on delay time | td(on) | | 6.1 | 19 | ns | VDD=300 V, VGS=10 V, ID=0.01 A, RG=6 Ω | 3 |
| Rise time | tr | | 9.7 | 14.5 | ns | VDD=300 V, VGS=10 V, ID=0.01 A, RG=6 Ω | 3 |
| Turn-off delay time | td(off) | | 14 | 21 | ns | VDD=300 V, VGS=10 V, ID=0.01 A, RG=6 Ω | 3 |
| Fall time | tf | | 115 | 170 | ns | VDD=300 V, VGS=10 V, ID=0.01 A, RG=6 Ω | 3 |
| Gate to source charge | Qgs | | 0.07 | 0.1 | nC | VDD=300 V, ID=0.01 A, VGS=0 to 10 V | 3 |
| Gate to drain charge | Qgd | | 0.31 | 0.5 | nC | VDD=300 V, ID=0.01 A, VGS=0 to 10 V | 3 |
| Gate charge total | Qg | | 0.65 | 1 | nC | VDD=300 V, ID=0.01 A, VGS=0 to 10 V | 3 |
| Diode continuous forward current | IS | | | 0.016 | A | | 3 |
| Diode pulse current | IS,pulse | | | 0.09 | A | | 3 |
| Diode forward voltage | VSD | | 0.82 | 1.2 | V | VGS=0 V, IF=0.016 A, Tj=25 °C | 3 |
| Reverse recovery time | trr | | 160 | 240 | ns | VR=300 V, IF=0.016 A, diF/dt=100 A/µs, TA=25 °C | 3 |
| Reverse recovery charge | Qrr | | 13.2 | 19.8 | nC | VR=300 V, IF=0.016 A, diF/dt=100 A/µs, TA=25 °C | 3 |
## CAD (KiCad official)
- Symbol: `BSS127H6327XTSA2`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `bss127h6327xtsa2-etched.step` / `bss127h6327xtsa2-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bss127h6327xtsa2.step` / `bss127h6327xtsa2.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586188026761891840) (9 pp, sha256 `aa524b7e36027b5a`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bss127h6327xtsa2-datasheet.pdf)