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Ray bss126h6327: specified limits as data (metadata.characteristics, 32 rows from the datasheet) 04843b4 17d ago

BSS126H6327

Infineon Technologies · MOSFETs · SOT-23-3

BSS126H6327 from Infineon Technologies, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel depletion-mode MOSFET; VGS max is ±20 V and VGS(th) is -2.7 V to -1.6 V at VDS=3 V, ID=8 µA.
2 S passive Source terminal of the MOSFET; continuous drain current is 0.021 A at TA=25 °C.
3 D passive Drain of the MOSFET with VDS rating of 600 V and RDS(on) max 700 Ω; pulsed drain current is 0.085 A at TA=25 °C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-23-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 0.021 A TA=25 °C 1
Continuous drain current ID 0.017 A TA=70 °C 1
Pulsed drain current ID,pulse 0.085 A TA=25 °C 1
Reverse diode dv/dt dv/dt 6 kV/µs ID=0.016 A, VDS=20 V, di/dt=200 A/µs, Tj,max=150 °C 1
Gate source voltage VGS -20 20 V 1
Power dissipation Ptot 0.5 W TA=25 °C 1
Operating and storage temperature Tj, Tstg -55 150 °C 1
Thermal resistance, junction - ambient RthJA 250 K/W minimal footprint 2
Drain-source breakdown voltage V(BR)DSS 600 V VGS=-5 V, ID=250 µA 2
Gate threshold voltage VGS(th) -2.7 -2 -1.6 V VDS=3 V, ID=8 µA 2
Drain-source cutoff current ID(off) 0.1 µA VDS=600 V, VGS=-5 V, Tj=25 °C 2
Drain-source cutoff current ID(off) 10 µA VDS=600 V, VGS=-5 V, Tj=125 °C 2
Gate-source leakage current IGSS 100 nA VGS=20 V, VDS=0 V 2
On-state drain current IDSS 7 mA VGS=0 V, VDS=25 V 2
Drain-source on-state resistance RDS(on) 320 700 Ω VGS=0 V, ID=3 mA 2
Drain-source on-state resistance RDS(on) 280 500 Ω VGS=10 V, ID=16 mA 2
Transconductance gfs 0.008 0.017 S /VDS/>2/ID/RDS(on)max, ID=0.01 A 2
Input capacitance Ciss 21 28 pF VGS=-5 V, VDS=25 V, f=1 MHz 3
Output capacitance Coss 2.4 3.2 pF VGS=-5 V, VDS=25 V, f=1 MHz 3
Reverse transfer capacitance Crss 1 1.5 pF VGS=-5 V, VDS=25 V, f=1 MHz 3
Turn-on delay time td(on) 6.1 9.2 ns VDD=300 V, VGS=-3…7 V, ID=0.01 A, RG=6 Ω 3
Rise time tr 9.7 14.5 ns VDD=300 V, VGS=-3…7 V, ID=0.01 A, RG=6 Ω 3
Turn-off delay time td(off) 14 21 ns VDD=300 V, VGS=-3…7 V, ID=0.01 A, RG=6 Ω 3
Fall time tf 115 170 ns VDD=300 V, VGS=-3…7 V, ID=0.01 A, RG=6 Ω 3
Gate to source charge Qgs 0.05 0.08 nC VDD=400 V, ID=10 mA, VGS=-3 to 5 V 3
Gate to drain charge Qgd 1.2 1.8 nC VDD=400 V, ID=10 mA, VGS=-3 to 5 V 3
Gate charge total Qg 1.4 2.1 nC VDD=400 V, ID=10 mA, VGS=-3 to 5 V 3
Diode continuous forward current IS 0.016 A 3
Diode pulse current IS,pulse 0.064 A 3
Diode forward voltage VSD 0.81 1.2 V VGS=-5 V, IF=16 mA, Tj=25 °C 3
Reverse recovery time trr 160 240 ns VR=300 V, IF=0.01 A, diF/dt=100 A/µs, TA=25 °C 3
Reverse recovery charge Qrr 13.2 19.8 nC VR=300 V, IF=0.01 A, diF/dt=100 A/µs, TA=25 °C 3

CAD (KiCad official)

  • Symbol: BSS126H6327
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: bss126h6327-etched.step / bss126h6327-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bss126h6327.step / bss126h6327.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 38b355b3fac980a8, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF