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BSS123W

Public Made by Adom

by adom

CBI MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

BSS123W

CBI · MOSFETs · SOT-323

BSS123W from CBI, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal of the N-channel MOSFET, with a gate-source voltage rating of ±20 V.
2 SOURCE passive Source terminal of the N-channel MOSFET, with a continuous source-drain diode current rating of 0.17 A.
3 DRAIN passive Drain terminal of the N-channel MOSFET, rated for a drain-source voltage of 100 V and a continuous drain current of 0.17 A.

Key specifications

Parameter Value
Manufacturer CBI
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 0.17 A note 1 1
Pulsed Drain Current IDM 0.68 A tp=10us 1
Continuous Source-Drain Diode Current IS 0.17 A 1
Power Dissipation PD 0.25 W 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature TSTG -55 150 ℃ 1
Lead Temperature for Soldering Purposes TL 260 ℃ 1/8 inch from case for 10 s 1
Thermal Resistance from Junction to Ambient RθJA 357 ℃/W note 1 1
Drain-source breakdown voltage V(BR)DSS 100 V VGS = 0V, ID = 250µA 2
Zero gate voltage drain current IDSS 1 µA VDS = 100V, VGS = 0V 2
Zero gate voltage drain current IDSS 10 nA VDS = 20V, VGS = 0V 2
Gate-body leakage current IGSS -50 50 nA VGS = ±20V, VDS = 0V 2
Gate threshold voltage VGS(th) 1 1.6 2.8 V VDS = VGS, ID = 250µA 2
Drain-source on-resistance RDS(on) 3.8 10 Ω VGS = 4.5V, ID = 0.17A 2
Drain-source on-resistance RDS(on) 3.5 6 Ω VGS = 10V, ID = 0.17A 2
Forward transconductance gFS 80 mS VDS = 10V, ID = 170mA 2
Diode forward voltage VSD 1.3 V IS = 340mA, VGS = 0V 2
Input Capacitance Ciss 29 60 pF VDS = 25V, VGS = 0V, f = 1MHz 2
Output Capacitance Coss 10 15 pF 2
Reverse Transfer Capacitance Crss 2 6 pF 2
Turn-on delay time td(on) 8 ns VGS = 10V, VDD = 30V, ID = 0.28A, RGEN = 50Ω 2
Turn-on rise time tr 8 ns 2
Turn-off delay time td(off) 13 ns 2
Turn-off fall time tf 16 ns 2
Total Gate Charge Qg 1.4 2 nC VDS = 10V, ID = 0.22A, VGS = 10V 2
Gate-Source Charge Qgs 0.15 0.25 nC 2
Gate-Drain Charge Qgd 0.2 0.4 nC 2

CAD (KiCad official)

  • Symbol: BSS123W
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: bss123w-etched.step / bss123w-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bss123w.step / bss123w.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CBI datasheet (4 pp, sha256 06301105928dcdcc, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF