component
BSS123LT1G
Public Made by Adomby adom
onsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownBSS123LT1G
onsemi · MOSFETs · SOT-23
BSS123LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate control input terminal rated for ±20 Vdc continuous or ±40 Vpk non-repetitive gate-source voltage to modulate drain-source channel conduction. |
| 2 | SOURCE | power_in | Source terminal providing the reference point for gate-source voltage and drain current definitions, serving as the return path typically connected to ground. |
| 3 | DRAIN | output | Drain terminal rated for maximum 100 Vdc drain-source voltage and 170 mA continuous drain current with RDS(on) of 6 Ω when VGS exceeds the threshold of 1.6 to 2.6 Vdc. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | Vdc | VGS = 0, ID = 250 Adc | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 15 | Adc | VGS = 0, VDS = 100 Vdc, TJ = 25°C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 60 | Adc | VGS = 0, VDS = 100 Vdc, TJ = 125°C | 2 | ||
| Gate-Body Leakage Current | IGSS | 50 | nAdc | VGS = 20 Vdc, VDS = 0 | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1.6 | 2.6 | Vdc | VDS = VGS, ID = 1.0 mAdc | 2 | |
| Static Drain-Source On-Resistance | rDS(on) | 6 | Ω | VGS = 10 Vdc, ID = 100 mAdc | 2 | ||
| Forward Transconductance | gfs | 80 | mmhos | VDS = 25 Vdc, ID = 100 mAdc | 2 | ||
| Diode Forward On-Voltage | VSD | 1.3 | V | ID = 0.34 Adc, VGS = 0 Vdc | 2 | ||
| Drain-Source Voltage | VDSS | 100 | Vdc | 1 | |||
| Gate-Source Voltage, Continuous | VGS | -20 | 20 | Vdc | Continuous | 1 | |
| Gate-Source Voltage, Non-repetitive | VGSM | -40 | 40 | Vpk | Non-repetitive (tp ≤ 50 s) | 1 | |
| Drain Current, Continuous | ID | 0.17 | Adc | Continuous (Note 1) | 1 | ||
| Drain Current, Pulsed | IDM | 0.68 | Adc | Pulsed (Note 2) | 1 | ||
| Total Device Dissipation, FR-5 Board | PD | 225 | mW | TA = 25°C, FR-5 board (Note 3) | 1 | ||
| Derate above 25°C | PD | 1.8 | mW/°C | Derate above 25°C | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 556 | °C/W | 1 | |||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
BSS123LT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bss123lt1g-etched.step/bss123lt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss123lt1g.step/bss123lt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (5 pp, sha256
0992054b5b324f40, retrieved 2026-09-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-4-6(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).