component
BSS123K-TP
Public Made by Adomby adom
MCC(美微科) MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 16d ago |
| viewers | 16d ago |
| bss123k-tp-etched.glb | 16d ago |
| bss123k-tp-etched.step | 16d ago |
| bss123k-tp-hero.glb | 16d ago |
| bss123k-tp-hero.overlay.json | 16d ago |
| bss123k-tp.glb | 16d ago |
| bss123k-tp.kicad_mod | 16d ago |
| bss123k-tp.kicad_sym | 16d ago |
| bss123k-tp.lbr | 16d ago |
| bss123k-tp.step | 16d ago |
| package.json | 16d ago |
| page.json | 16d ago |
| README.md | 16d ago |
BSS123K-TP
MCC(美微科) · MOSFETs · SOT-23
BSS123K-TP from MCC(美微科), in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated at ±20 V, and the device is ESD protected up to 2 kV (HBM). |
| 2 | SOURCE | passive | Source terminal of the N-channel MOSFET, serving as the reference for VGS; the continuous drain current rating is 0.28 A with a pulsed rating of 1.12 A. |
| 3 | DRAIN | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is rated at 100 V, with continuous drain current of 0.28 A and pulsed drain current of 1.12 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MCC(美微科) |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | V | VGS=0V, ID=250µA | 2 | ||
| Gate-Threshold Voltage | VGS(th) | 1.5 | 2.5 | V | VDS=VGS, ID=250µA | 2 | |
| Gate-Body Leakage Current | IGSS | -10 | 10 | µA | VGS=± 20V, VDS=0V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=80V, VGS=0V | 2 | ||
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 0.28 | A | TA=25°C | 1 | ||
| Drain Current-Continuous | ID | 0.17 | A | TA=100°C | 1 | ||
| Drain Current-Pulsed | IDM | 1.12 | A | Pulsed, Note 3 | 1 | ||
| Power Dissipation | PD | 0.78 | W | Note 4 | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | 1 | ||
| Storage Temperature | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction to Ambient | RθJA | 160 | °C/W | Junction to ambient, FR-4 board with 2oz copper, still air, TA=25°C (Note 2) | 1 |
CAD (KiCad official)
- Symbol:
BSS123K-TP - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bss123k-tp-etched.step/bss123k-tp-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bss123k-tp.step/bss123k-tp.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MCC(美微科) datasheet (6 pp, sha256
2454282763968cd2, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).