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Contents

README

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BSR33-QX

Nexperia · Bipolar (BJT) · SOT-89

BSR33-QX from Nexperia, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E passive Emitter of the PNP transistor; emitter-base voltage is limited to -5 V (VEBO) and emitter current is bounded by the collector current limit of -1 A (IC).
2 C passive Collector of the PNP transistor, also tied to the exposed heatsink tab; limits are VCBO -90 V, VCEO -80 V, IC -1 A continuous and ICM -2 A peak (single pulse).
3 B input Base of the PNP transistor; peak base current is limited to -200 mA (IBM, single pulse, tp ≤ 1 ms).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO -90 V open emitter 2
Collector-emitter voltage VCEO -80 V open base 2
Emitter-base voltage VEBO -5 V open collector 2
Collector current IC -1 A 2
Peak collector current ICM -2 A 2
Peak base current IBM -200 mA single pulse; tp ≤ 1 ms 2
Total power dissipation Ptot 1.35 W Tamb ≤ 25 °C; device mounted on FR4 PCB, single-sided copper, mounting pad for collector 6 cm² 2
Junction temperature Tj 150 °C 2
Ambient temperature Tamb -65 150 °C 2
Storage temperature Tstg -65 150 °C 2
Thermal resistance junction to ambient Rth(j-a) 93 K/W in free air; device mounted on FR4 PCB, single-sided copper, mounting pad for collector 6 cm² 2
Thermal resistance junction to solder point Rth(j-sp) 13 K/W 2
Collector-base cut-off current (emitter open) ICBO -100 nA VCB = -60 V; IE = 0 A; Tamb = 25 °C 3
Collector-base cut-off current (emitter open) ICBO -50 µA VCB = -60 V; IE = 0 A; Tj = 150 °C 3
Emitter-base cut-off current (collector open) IEBO -100 nA VEB = -5 V; IC = 0 A; Tamb = 25 °C 3
DC current gain hFE 30 VCE = -5 V; IC = -100 µA; pulsed; tp ≤ 300 µs; δ ≤ 0.01; Tamb = 25 °C 3
DC current gain hFE 100 300 VCE = -5 V; IC = -100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.01; Tamb = 25 °C 3
DC current gain hFE 50 VCE = -5 V; IC = -500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.01; Tamb = 25 °C 3
Collector-emitter saturation voltage VCEsat -0.25 V IC = -150 mA; IB = -15 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.01; Tamb = 25 °C 3
Collector-emitter saturation voltage VCEsat -0.5 V IC = -500 mA; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.01; Tamb = 25 °C 3
Base-emitter saturation voltage VBEsat -1 V IC = -150 mA; IB = -15 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.01; Tamb = 25 °C 3
Base-emitter saturation voltage VBEsat -1.2 V IC = -500 mA; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.01; Tamb = 25 °C 3
Transition frequency fT 100 MHz VCE = -10 V; IC = -50 mA; f = 100 MHz; Tamb = 25 °C 3

CAD (KiCad official)

  • Symbol: BSR33-QX
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: bsr33-qx-etched.step / bsr33-qx-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bsr33-qx.step / bsr33-qx.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (7 pp, sha256 64ef407deafc4d7b, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF