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BSR19A

Nexperia · Bipolar (BJT) · SOT-23

BSR19A from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base terminal of the NPN high-voltage transistor; the datasheet gives no pin-specific limits, so the device limiting values in Table 5 apply.
2 E passive Emitter terminal of the NPN high-voltage transistor; the datasheet gives no pin-specific limits, so the device limiting values in Table 5 apply.
3 C passive Collector terminal of the NPN high-voltage transistor; the datasheet gives no pin-specific limits, so the device limiting values in Table 5 apply (VCBO 180 V, VCEO 160 V, IC 300 mA).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO 180 V open emitter 2
Collector-emitter voltage VCEO 160 V open base 2
Emitter-base voltage VEBO 6 V open collector 2
Collector current IC 300 mA 2
Peak collector current ICM 600 mA single pulse; tp ≤ 1 ms 2
Limiting base current IBlim 100 mA 2
Total power dissipation Ptot 250 mW Tamb ≤ 25 °C 2
Junction temperature Tj 150 °C 2
Ambient temperature Tamb -65 150 °C 2
Storage temperature Tstg -65 150 °C 2
Thermal resistance from junction to ambient Rth(j-a) 500 K/W Transistor mounted on an FR4 printed-circuit board 2
Collector-base cut-off current ICBO 50 nA VCB = 120 V; IE = 0 A; Tamb = 25 °C 3
Collector-base cut-off current ICBO 50 µA VCB = 120 V; IE = 0 A; Tamb = 100 °C 3
Emitter-base cut-off current IEBO 50 nA VEB = 4 V; IC = 0 A; Tamb = 25 °C 3
DC current gain hFE 80 VCE = 5 V; IC = 1 mA; Tamb = 25 °C 3
DC current gain hFE 80 250 VCE = 5 V; IC = 10 mA; Tamb = 25 °C 3
DC current gain hFE 30 VCE = 5 V; IC = 50 mA; Tamb = 25 °C 3
Collector-emitter saturation voltage VCEsat 150 mV IC = 10 mA; IB = 1 mA; Tamb = 25 °C 3
Collector-emitter saturation voltage VCEsat 200 mV IC = 50 mA; IB = 5 mA; Tamb = 25 °C 3
Collector capacitance Cc 6 pF VCB = 10 V; IE = 0 A; f = 1 MHz; Tamb = 25 °C 3
Transition frequency fT 100 MHz VCE = 10 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C 3

CAD (KiCad official)

  • Symbol: BSR19A
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bsr19a-etched.step / bsr19a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bsr19a.step / bsr19a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (8 pp, sha256 ad969492ee2279c5, retrieved 2026-10-17, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF