component
BSP88H6327
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Infineon Technologies MOSFETs, SOT-223-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BSP88H6327
Infineon Technologies · MOSFETs · SOT-223-4
BSP88H6327 from Infineon Technologies, in a SOT-223-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel logic-level MOSFET, with VGS rated at ±20 V maximum and VGS(th) of 0.6 V min to 1.4 V max at ID=108 µA. |
| 2 | D | passive | Drain, connected internally to pin 4 and the tab, with VDS rated at 240 V and continuous drain current of 0.35 A at TA=25°C. |
| 3 | S | passive | Source of the N-channel MOSFET, with the body diode rated for 0.35 A continuous forward current. |
| 4 | D | passive | Drain tab (pin 4), electrically common with pin 2, used as the soldering point with RthJS of 25 K/W max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-223-4 |
| Category | Transistors |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 240 | V | VGS=0, ID=250µA | 2 | ||
| Gate threshold voltage | VGS(th) | 0.6 | 1 | 1.4 | V | VGS = VDS, ID=108µA | 2 |
| Zero gate voltage drain current | IDSS | 0.1 | µA | VDS=240V, VGS=0, Tj=25°C | 2 | ||
| Zero gate voltage drain current | IDSS | 10 | µA | VDS=240V, VGS=0, Tj=150°C | 2 | ||
| Gate-source leakage current | IGSS | 1 | 10 | nA | VGS=20V, VDS=0 | 2 | |
| Drain-source on-state resistance | RDS(on) | 4.9 | 15 | Ω | VGS=2.8V, ID=0.014A | 2 | |
| Drain-source on-state resistance | RDS(on) | 4.6 | 7.5 | Ω | VGS=4.5V, ID=0.32A | 2 | |
| Drain-source on-state resistance | RDS(on) | 4 | 6 | Ω | VGS=10V, ID=0.35A | 2 | |
| Transconductance | gfs | 0.19 | 0.38 | S | VDS≥2IDRDS(on)max, ID=0.28A | 3 | |
| Input capacitance | Ciss | 76 | 95 | pF | VGS=0, VDS=25V, f=1MHz | 3 | |
| Output capacitance | Coss | 12 | 15 | pF | VGS=0, VDS=25V, f=1MHz | 3 | |
| Reverse transfer capacitance | Crss | 6 | 9 | pF | VGS=0, VDS=25V, f=1MHz | 3 | |
| Turn-on delay time | td(on) | 3.6 | 5.4 | ns | VDD=120V, VGS=4.5V, ID=0.35A, RG=15Ω | 3 | |
| Rise time | tr | 3.5 | 5.2 | ns | VDD=120V, VGS=4.5V, ID=0.35A, RG=15Ω | 3 | |
| Turn-off delay time | td(off) | 17.9 | 26.8 | ns | VDD=120V, VGS=4.5V, ID=0.35A, RG=15Ω | 3 | |
| Fall time | tf | 18.9 | 28.3 | ns | VDD=120V, VGS=4.5V, ID=0.35A, RG=15Ω | 3 | |
| Gate to source charge | Qgs | 0.2 | 0.3 | nC | VDD=192V, ID=0.35A | 3 | |
| Gate to drain charge | Qgd | 2 | 3 | nC | VDD=192V, ID=0.35A | 3 | |
| Gate charge total | Qg | 4.5 | 6.8 | nC | VDD=192V, ID=0.35A, VGS=0 to 10V | 3 | |
| Gate plateau voltage | V(plateau) | 2.7 | V | VDD=192V, ID=0.35A | 3 | ||
| Inverse diode continuous forward current | IS | 0.35 | A | TA=25°C | 3 | ||
| Inverse diode direct current, pulsed | ISM | 1.4 | A | 3 | |||
| Inverse diode forward voltage | VSD | 0.86 | 1.2 | V | VGS=0, IF=IS | 3 | |
| Reverse recovery time | trr | 66 | 82 | ns | VR=120V, IF=IS, diF/dt=100A/µs | 3 | |
| Reverse recovery charge | Qrr | 119 | 149 | nC | VR=120V, IF=IS, diF/dt=100A/µs | 3 | |
| Continuous drain current | ID | 0.35 | A | TA=25°C | 1 | ||
| Continuous drain current | ID | 0.28 | A | TA=70°C | 1 | ||
| Pulsed drain current | ID puls | 1.4 | A | TA=25°C | 1 | ||
| Reverse diode dv/dt | dv/dt | 6 | kV/µs | IS=0.35A, VDS=192V, di/dt=200A/µs, Tjmax=150°C | 1 | ||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Power dissipation | Ptot | 1.8 | W | TA=25°C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Thermal resistance, junction - soldering point | RthJS | 25 | K/W | Pin 4 | 2 | ||
| Thermal resistance, junction - ambient | RthJA | 115 | K/W | SMD, device on PCB, min. footprint | 2 | ||
| Thermal resistance, junction - ambient | RthJA | 70 | K/W | SMD, device on PCB, 6 cm2 cooling area | 2 | ||
| Drain-source voltage | VDS | 240 | V | Product summary | 1 |
CAD (KiCad official)
- Symbol:
BSP88H6327 - Footprint:
Package_TO_SOT_SMD:SOT-223 - 3D model: SOT-223-4 (KiCad packages3D, STEP)
- 3D model files:
bsp88h6327-etched.step/bsp88h6327-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bsp88h6327.step/bsp88h6327.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (8 pp, sha256
88b8a02f421daa0e, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BSP88H6327
**Infineon Technologies** · MOSFETs · SOT-223-4
BSP88H6327 from Infineon Technologies, in a SOT-223-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel logic-level MOSFET, with VGS rated at ±20 V maximum and VGS(th) of 0.6 V min to 1.4 V max at ID=108 µA. |
| 2 | D | passive | Drain, connected internally to pin 4 and the tab, with VDS rated at 240 V and continuous drain current of 0.35 A at TA=25°C. |
| 3 | S | passive | Source of the N-channel MOSFET, with the body diode rated for 0.35 A continuous forward current. |
| 4 | D | passive | Drain tab (pin 4), electrically common with pin 2, used as the soldering point with RthJS of 25 K/W max. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-223-4 |
| Category | Transistors |
| Pins | 4 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 240 | | | V | VGS=0, ID=250µA | 2 |
| Gate threshold voltage | VGS(th) | 0.6 | 1 | 1.4 | V | VGS = VDS, ID=108µA | 2 |
| Zero gate voltage drain current | IDSS | | | 0.1 | µA | VDS=240V, VGS=0, Tj=25°C | 2 |
| Zero gate voltage drain current | IDSS | | | 10 | µA | VDS=240V, VGS=0, Tj=150°C | 2 |
| Gate-source leakage current | IGSS | | 1 | 10 | nA | VGS=20V, VDS=0 | 2 |
| Drain-source on-state resistance | RDS(on) | | 4.9 | 15 | Ω | VGS=2.8V, ID=0.014A | 2 |
| Drain-source on-state resistance | RDS(on) | | 4.6 | 7.5 | Ω | VGS=4.5V, ID=0.32A | 2 |
| Drain-source on-state resistance | RDS(on) | | 4 | 6 | Ω | VGS=10V, ID=0.35A | 2 |
| Transconductance | gfs | 0.19 | 0.38 | | S | VDS≥2*ID*RDS(on)max, ID=0.28A | 3 |
| Input capacitance | Ciss | | 76 | 95 | pF | VGS=0, VDS=25V, f=1MHz | 3 |
| Output capacitance | Coss | | 12 | 15 | pF | VGS=0, VDS=25V, f=1MHz | 3 |
| Reverse transfer capacitance | Crss | | 6 | 9 | pF | VGS=0, VDS=25V, f=1MHz | 3 |
| Turn-on delay time | td(on) | | 3.6 | 5.4 | ns | VDD=120V, VGS=4.5V, ID=0.35A, RG=15Ω | 3 |
| Rise time | tr | | 3.5 | 5.2 | ns | VDD=120V, VGS=4.5V, ID=0.35A, RG=15Ω | 3 |
| Turn-off delay time | td(off) | | 17.9 | 26.8 | ns | VDD=120V, VGS=4.5V, ID=0.35A, RG=15Ω | 3 |
| Fall time | tf | | 18.9 | 28.3 | ns | VDD=120V, VGS=4.5V, ID=0.35A, RG=15Ω | 3 |
| Gate to source charge | Qgs | | 0.2 | 0.3 | nC | VDD=192V, ID=0.35A | 3 |
| Gate to drain charge | Qgd | | 2 | 3 | nC | VDD=192V, ID=0.35A | 3 |
| Gate charge total | Qg | | 4.5 | 6.8 | nC | VDD=192V, ID=0.35A, VGS=0 to 10V | 3 |
| Gate plateau voltage | V(plateau) | | 2.7 | | V | VDD=192V, ID=0.35A | 3 |
| Inverse diode continuous forward current | IS | | | 0.35 | A | TA=25°C | 3 |
| Inverse diode direct current, pulsed | ISM | | | 1.4 | A | | 3 |
| Inverse diode forward voltage | VSD | | 0.86 | 1.2 | V | VGS=0, IF=IS | 3 |
| Reverse recovery time | trr | | 66 | 82 | ns | VR=120V, IF=IS, diF/dt=100A/µs | 3 |
| Reverse recovery charge | Qrr | | 119 | 149 | nC | VR=120V, IF=IS, diF/dt=100A/µs | 3 |
| Continuous drain current | ID | | | 0.35 | A | TA=25°C | 1 |
| Continuous drain current | ID | | | 0.28 | A | TA=70°C | 1 |
| Pulsed drain current | ID puls | | | 1.4 | A | TA=25°C | 1 |
| Reverse diode dv/dt | dv/dt | | | 6 | kV/µs | IS=0.35A, VDS=192V, di/dt=200A/µs, Tjmax=150°C | 1 |
| Gate source voltage | VGS | -20 | | 20 | V | | 1 |
| Power dissipation | Ptot | | | 1.8 | W | TA=25°C | 1 |
| Operating and storage temperature | Tj, Tstg | -55 | | 150 | °C | | 1 |
| Thermal resistance, junction - soldering point | RthJS | | | 25 | K/W | Pin 4 | 2 |
| Thermal resistance, junction - ambient | RthJA | | | 115 | K/W | SMD, device on PCB, min. footprint | 2 |
| Thermal resistance, junction - ambient | RthJA | | | 70 | K/W | SMD, device on PCB, 6 cm2 cooling area | 2 |
| Drain-source voltage | VDS | | 240 | | V | Product summary | 1 |
## CAD (KiCad official)
- Symbol: `BSP88H6327`
- Footprint: `Package_TO_SOT_SMD:SOT-223`
- 3D model: SOT-223-4 (KiCad packages3D, STEP)
- 3D model files: `bsp88h6327-etched.step` / `bsp88h6327-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bsp88h6327.step` / `bsp88h6327.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](docs/bsp88h6327-datasheet.pdf) (8 pp, sha256 `88b8a02f421daa0e`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bsp88h6327-datasheet.pdf)