component

BSO615NG-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorbso615ng-hxyfactory-2.0.0extractor-text

Verified BSO615NG-HXY

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier lcsc, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: BSO615NG-HXY · SOP-8 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 6-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOIC-8_3.9x4.9mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-f2ym6cb9/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ bso615ng-hxy.kicad_sym✓ bso615ng-hxy.kicad_mod✓ bso615ng-hxy.step
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

BSO615NG-HXY

HXY MOSFET · MOSFETs · SOP-8

BSO615NG-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of the first N-channel MOSFET, paired with gate G1 and drain D1.
2 G1 input Gate terminal of the first N-channel MOSFET, rated for VGS of ±20 V per the absolute maximum ratings.
3 S2 passive Source terminal of the second N-channel MOSFET, paired with gate G2 and drain D2.
4 G2 input Gate terminal of the second N-channel MOSFET, rated for VGS of ±20 V per the absolute maximum ratings.
5 D2 passive Drain terminal of the second N-channel MOSFET, rated for VDS of 60 V.
6 D2 passive Drain terminal of the second N-channel MOSFET, rated for VDS of 60 V.
7 D1 passive Drain terminal of the first N-channel MOSFET, rated for VDS of 60 V.
8 D1 passive Drain terminal of the first N-channel MOSFET, rated for VDS of 60 V.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS 20 V 1
Drain Current ID@TA=25℃ 5 A VGS @ 4.5V, TA=25℃ 1
Drain Current ID@TA=100℃ 3.5 A VGS @ 4.5V, TA=100℃ 1
Pulsed Drain Current IDM 20 A 1
Total Power Dissipation PD@TA=25℃ 1.5 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Maximum Thermal Resistance, Junction-ambient Rthj-a 85 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V,ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS=0V, VDS=60V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0A 2
Gate-Source Threshold Voltage VGS(th) 1.5 1.57 2.5 V VGS=VDS, ID=250μA 2
Drain-Source On Resistance RDS(ON) 25 33 mΩ VGS=10V,ID=4A 2
Drain-Source On Resistance RDS(ON) 33 43 mΩ VGS=4.5V,ID=3A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, ISD=1A 2
Continuous Drain Current IS 5 A VD=VG=0V 2
Pulsed Drain Current ISM 20 A 2
Input Capacitance Ciss 1027 pF VDS=15V, VGS=0V, f=1MHz 2
Output Capacitance Coss 60 pF VDS=15V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 45 pF VDS=15V, VGS=0V, f=1MHz 2
Turn-On Delay Time td(on) 3 ns VDS=30V, ID=4A, RENG=3.3Ω, VGS=10V 2
Rise Time tr 34 ns VDS=30V, ID=4A, RENG=3.3Ω, VGS=10V 2
Turn-Off Delay Time td(off) 23 ns VDS=30V, ID=4A, RENG=3.3Ω, VGS=10V 2
Fall Time tf 6 ns VDS=30V, ID=4A, RENG=3.3Ω, VGS=10V 2
Total Gate Charge Qg 19 nC VGS=10V, VDS=48V, ID=4A 2
Gate-Source Charge Qgs 2.6 nC VGS=10V, VDS=48V, ID=4A 2
Gate-Drain Miller Charge Qgd 4.1 nC VGS=10V, VDS=48V, ID=4A 2
Reverse Recovery Time Trr 12.1 ns IF=4A, TJ=25℃, dI/dt=100A/us 2
Reverse Recovery Charge Qrr 6.7 nC IF=4A, TJ=25℃, dI/dt=100A/us 2

CAD (KiCad official)

  • Symbol: BSO615NG-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: bso615ng-hxy-etched.step / bso615ng-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bso615ng-hxy.step / bso615ng-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 4c18e8a94304e4f3, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF