component

BSO615N G

Public Made by Adom

by adom

Infineon Technologies MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsbso615n gfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 7d ago
viewers bso615n-g: viewers · Ray 7d ago
bso615n-g-etched.glb Publish 0.1.0 · Ray 7d ago
bso615n-g-etched.step bso615n-g: factory component page (tier=lcsc) · Ray 7d ago
bso615n-g-hero.glb bso615n-g: hero GLB from the etched model (keeps the MPN mark) · Ray 7d ago
bso615n-g-hero.overlay.json Publish 0.1.0 · Ray 7d ago
bso615n-g.glb Publish 0.1.0 · Ray 7d ago
bso615n-g.kicad_mod Publish 0.1.0 · Ray 7d ago
bso615n-g.kicad_sym Publish 0.1.0 · Ray 7d ago
bso615n-g.lbr Publish 0.1.0 · Ray 7d ago
bso615n-g.step Publish 0.1.0 · Ray 7d ago
package.json Publish 0.1.0 · Ray 7d ago
page.json Set visibility: public · Ray 7d ago
README.md Publish 0.1.0 · Ray 7d ago

BSO615N G

Infineon Technologies · MOSFETs · SO-8

BSO615N G from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (channel 1), dual N-channel; continuous drain current 2.6 A with one channel active.
2 G1 input Gate of MOSFET 1, logic level, gate-source voltage limited to ±20 V, threshold 1.2 V min to 2 V max at 20 µA.
3 S2 passive Source of MOSFET 2 (channel 2), dual N-channel; continuous drain current 2.6 A with one channel active.
4 G2 input Gate of MOSFET 2, logic level, gate-source voltage limited to ±20 V, threshold 1.2 V min to 2 V max at 20 µA.
5 D2 passive Drain of MOSFET 2, connected internally with pin 6; drain-source voltage 60 V.
6 D2 passive Drain of MOSFET 2, connected internally with pin 5; drain-source voltage 60 V.
7 D1 passive Drain of MOSFET 1, connected internally with pin 8; drain-source voltage 60 V.
8 D1 passive Drain of MOSFET 1, connected internally with pin 7; drain-source voltage 60 V.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SO-8
Category Transistors/Thyristors
Pins 8

CAD (KiCad official)

  • Symbol: BSO615N G
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: bso615n-g-etched.step / bso615n-g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bso615n-g.step / bso615n-g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (8 pp, sha256 164816aabf3eff3d, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF