# BSN20BK215

**Nexperia** · MOSFETs · SOT-23(TO-236AB)

BSN20BK215 from Nexperia, in a SOT-23(TO-236AB). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; logic-level drive with VGS rated ±20 V and threshold VGS(th) of 0.6 V min, 1 V typ, 1.4 V max at ID = 250 µA. |
| 2 | S | passive | Source; source current IS up to 200 mA (Tamb = 25 °C) through the body diode. |
| 3 | D | passive | Drain; VDS rated 60 V max and continuous ID of 265 mA at Tamb = 25 °C (VGS = 10 V). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-23(TO-236AB) |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| drain-source breakdown voltage | V(BR)DSS | 60 |  |  | V | ID = 250 µA; VGS = 0 V; Tj = 25 °C | 6 |
| gate-source threshold voltage | VGSth | 0.6 | 1 | 1.4 | V | ID = 250 µA; VDS = VGS; Tj = 25 °C | 6 |
| drain leakage current | IDSS |  |  | 1 | µA | VDS = 60 V; VGS = 0 V; Tj = 25 °C | 6 |
| gate leakage current | IGSS |  |  | 10 | µA | VGS = 20 V; VDS = 0 V; Tj = 25 °C | 6 |
| gate leakage current | IGSS | -10 |  |  | µA | VGS = -20 V; VDS = 0 V; Tj = 25 °C | 6 |
| gate leakage current | IGSS |  |  | 1 | µA | VGS = 10 V; VDS = 0 V; Tj = 25 °C | 6 |
| gate leakage current | IGSS | -1 |  |  | µA | VGS = -10 V; VDS = 0 V; Tj = 25 °C | 6 |
| gate leakage current | IGSS |  |  | 0.3 | µA | VGS = 5 V; VDS = 0 V; Tj = 25 °C | 6 |
| gate leakage current | IGSS | -0.3 |  |  | µA | VGS = -5 V; VDS = 0 V; Tj = 25 °C | 6 |
| drain-source on-state resistance | RDSon |  | 2.1 | 2.8 | Ω | VGS = 10 V; ID = 200 mA; Tj = 25 °C | 6 |
| drain-source on-state resistance | RDSon |  | 4.3 | 5.7 | Ω | VGS = 10 V; ID = 200 mA; Tj = 150 °C | 6 |
| drain-source on-state resistance | RDSon |  | 2.2 | 3.2 | Ω | VGS = 5 V; ID = 200 mA; Tj = 25 °C | 6 |
| drain-source on-state resistance | RDSon |  | 2.6 | 4 | Ω | VGS = 2.5 V; ID = 75 mA; Tj = 25 °C | 6 |
| output capacitance | Coss |  | 3.1 | 10 | pF | VDS = 30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 6 |
| reverse transfer capacitance | Crss |  | 2 | 7 | pF | VDS = 30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 6 |
| source-drain voltage | VSD |  | 0.86 | 1.2 | V | IS = 200 mA; VGS = 0 V; Tj = 25 °C | 6 |
| forward transconductance | gfs |  | 0.71 |  | S | VDS = 10 V; ID = 200 mA; Tj = 25 °C | 6 |
| total gate charge | QG(tot) |  | 0.49 |  | nC | VDS = 30 V; ID = 200 mA; VGS = 4.5 V; Tj = 25 °C | 6 |
| gate-source charge | QGS |  | 0.12 |  | nC | VDS = 30 V; ID = 200 mA; VGS = 4.5 V; Tj = 25 °C | 6 |
| gate-drain charge | QGD |  | 0.12 |  | nC | VDS = 30 V; ID = 200 mA; VGS = 4.5 V; Tj = 25 °C | 6 |
| input capacitance | Ciss |  | 20.2 |  | pF | VDS = 30 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C | 6 |
| turn-on delay time | td(on) |  | 7.9 |  | ns | VDS = 30 V; ID = 200 mA; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 |
| rise time | tr |  | 8.4 |  | ns | VDS = 30 V; ID = 200 mA; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 |
| turn-off delay time | td(off) |  | 12.5 |  | ns | VDS = 30 V; ID = 200 mA; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 |
| fall time | tf |  | 5.1 |  | ns | VDS = 30 V; ID = 200 mA; VGS = 4.5 V; RG(ext) = 6 Ω; Tj = 25 °C | 6 |
| drain-source voltage | VDS |  |  | 60 | V |  | 3 |
| gate-source voltage | VGS | -20 |  | 20 | V | Tj = 25 °C | 3 |
| drain current | ID |  |  | 265 | mA | VGS = 10 V; Tamb = 25 °C [1] | 3 |
| drain current | ID |  |  | 170 | mA | VGS = 10 V; Tamb = 100 °C [1] | 3 |
| drain current | ID |  |  | 330 | mA | VGS = 10 V; Tsp = 25 °C | 3 |
| peak drain current | IDM |  |  | 0.9 | A | Tamb = 25 °C; single pulse; tp ≤ 10 µs | 3 |
| total power dissipation | Ptot |  |  | 310 | mW | Tamb = 25 °C [2] | 3 |
| total power dissipation | Ptot |  |  | 402 | mW | Tamb = 25 °C [1] | 3 |
| total power dissipation | Ptot |  |  | 1672 | mW | Tsp = 25 °C | 3 |
| junction temperature | Tj | -55 |  | 150 | °C |  | 3 |
| ambient temperature | Tamb | -55 |  | 150 | °C |  | 3 |
| storage temperature | Tstg | -65 |  | 150 | °C |  | 3 |
| source current | IS |  |  | 200 | mA | Tamb = 25 °C [1] | 3 |
| thermal resistance junction to ambient | Rth(j-a) |  | 351 | 404 | K/W | in free air [1] | 4 |
| thermal resistance junction to ambient | Rth(j-a) |  | 271 | 311 | K/W | [2] | 4 |
| thermal resistance junction to ambient | Rth(j-a) |  | 210 | 241 | K/W | t ≤ 5 s [2] | 4 |
| thermal resistance junction to solder point | Rth(j-sp) |  | 65 | 75 | K/W |  | 4 |

## CAD (KiCad official)

- Symbol: `BSN20BK215`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23(TO-236AB) (KiCad packages3D, STEP)
- 3D model files: `bsn20bk215-etched.step` / `bsn20bk215-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bsn20bk215.step` / `bsn20bk215.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Nexperia datasheet](https://assets.nexperia.com/documents/data-sheet/BSN20BK215.pdf) (16 pp, sha256 `995e2719cc48f1fb`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bsn20bk215-datasheet.pdf)