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BSL314PE-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BSL314PE-VB

VBsemi Elec · MOSFETs · TSOP-6

BSL314PE-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of P-channel MOSFET 1, with gate-source voltage limited to ±12 V.
2 S2 passive Source of P-channel MOSFET 2, with drain-source voltage rated at -20 V.
3 G2 input Gate of P-channel MOSFET 2, with gate-source voltage limited to ±12 V.
4 D2 passive Drain of P-channel MOSFET 2, with continuous drain current of -4.0 A at TC = 25 °C and pulsed drain current of -12 A.
5 S1 passive Source of P-channel MOSFET 1, with drain-source voltage rated at -20 V.
6 D1 passive Drain of P-channel MOSFET 1, with continuous drain current of -4.0 A at TC = 25 °C and pulsed drain current of -12 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TSOP-6
Category Triode/MOS Tube/Transistor
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS -20 V VGS = 0 V, ID = - 250 µA 2
Gate-Source Threshold Voltage VGS(th) -0.5 -2 V VDS = VGS, ID = - 250 µA 2
Gate-Source Leakage IGSS 100 nA VDS = 0 V, VGS = ± 12 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = - 20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = - 20 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -8 A VDS ≤ - 5 V, VGS = - 4.5V 2
Drain-Source On-State Resistance RDS(on) 0.075 Ω VGS = - 4.5V, ID = - 2.5 A 2
Drain-Source On-State Resistance RDS(on) 0.1 Ω VGS = - 2.5 V, ID = - 1 A 2
Total Gate Charge Qg 5.2 8 nC VDS = - 10 V, VGS = - 4.5 V, ID = - 2.6 A 2
Gate Resistance Rg 2 7 14 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 39 59 ns VDD = - 10 V, RL = 7.1 Ω, VGEN = - 4.5 V, Rg = 1 Ω 2
Rise Time tr 25 38 ns VDD = - 10 V, RL = 7.1 Ω, VGEN = - 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 13 20 ns VDD = - 10 V, RL = 7.1 Ω, VGEN = - 4.5 V, Rg = 1 Ω 2
Fall Time tf 9 18 ns VDD = - 10 V, RL = 7.1 Ω, VGEN = - 4.5 V, Rg = 1 Ω 2
Rise Time tr 10 20 ns VDD = - 10 V, RL = 7.1 Ω, VGEN = - 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 14 21 ns VDD = - 10 V, RL = 7.1 Ω, VGEN = - 4.5 V, Rg = 1 Ω 2
Fall Time tf 7 14 ns VDD = - 10 V, RL = 7.1 Ω, VGEN = - 4.5 V, Rg = 1 Ω 2
Body Diode Voltage VSD 0.85 1.2 V IS = - 2.1 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 13 20 ns IF = - 2.1 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Continuous Source-Drain Diode Current IS 1.17 A TC = 25 °C 2
Pulse Diode Forward Current ISM 8 A 2
Drain-Source Voltage VDS -20 V TA = 25 °C 1
Gate-Source Voltage VGS -12 12 V TA = 25 °C 1
Pulsed Drain Current IDM -12 A TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 93 110 °C/W t ≤ 5 s 1
Maximum Junction-to-Foot RthJF 75 90 °C/W Steady State 1

CAD (KiCad official)

  • Symbol: BSL314PE-VB
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: bsl314pe-vb-etched.step / bsl314pe-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bsl314pe-vb.step / bsl314pe-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 17f3266d54c03e9b, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF