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BSL308PEH6327

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Infineon Technologies MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BSL308PEH6327

Infineon Technologies · MOSFETs · TSOP-6

BSL308PEH6327 from Infineon Technologies, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of P-channel transistor 1, ESD protected (HBM class 2), with VGS limited to ±20 V.
2 S2 passive Source of P-channel transistor 2, rated for continuous drain current of -2.0 A at TA=25 °C (only one transistor in operation).
3 G2 input Gate of P-channel transistor 2, ESD protected (HBM class 2), with VGS limited to ±20 V.
4 D2 passive Drain of P-channel transistor 2, with VDS of -30 V and a pulsed drain current of -8.0 A at TA=25 °C.
5 S1 passive Source of P-channel transistor 1, rated for continuous drain current of -2.0 A at TA=25 °C (only one transistor in operation).
6 D1 passive Drain of P-channel transistor 1, with VDS of -30 V and RDS(on) max of 80 mΩ at VGS=-10 V.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID -2 A TA=25 °C 1
Continuous drain current ID -1.6 A TA=70 °C 1
Pulsed drain current ID,pulse -8 A TA=25 °C 1
Avalanche energy, single pulse EAS -10.7 mJ ID=-2 A, RGS=25 W 1
Reverse diode dv/dt dv/dt 6 kV/µs ID=-2 A, VDS=-16 V, di/dt=-200 A/µs, Tj,max=150 °C 1
Gate source voltage VGS -20 20 V 1
Power dissipation Ptot 0.5 W TA=25 °C 1
Operating and storage temperature Tj, Tstg -55 150 °C 1
Soldering temperature 260 °C 1
Thermal resistance, junction - ambient RthJA 250 K/W minimal footprint 2
Drain-source breakdown voltage V(BR)DSS -30 V VGS=0 V, ID=-250 µA 2
Gate threshold voltage VGS(th) -2 -1.5 -1 V VDS=VGS, ID=-11 µA 2
Drain-source leakage current IDSS -1 mA VDS=-30 V, VGS=0 V, Tj=25 °C 2
Drain-source leakage current IDSS -100 mA VDS=-30 V, VGS=0 V, Tj=150 °C 2
Gate-source leakage current IGSS -5 mA VGS=-20 V, VDS=0 V 2
Drain-source on-state resistance RDS(on) 88 130 mW VGS=-4.5 V, ID=-1.7 A 2
Drain-source on-state resistance RDS(on) 62 80 mW VGS=-10 V, ID=-2 A 2
Transconductance gfs 4.6 S /VDS/>2/ID/RDS(on)max, ID=-1.6 A 2
Input capacitance Ciss 376 500 pF VGS=0 V, VDS=-15 V, f=1 MHz 3
Output capacitance Coss 196 261 pF VGS=0 V, VDS=-15 V, f=1 MHz 3
Reverse transfer capacitance Crss 12 18 pF VGS=0 V, VDS=-15 V, f=1 MHz 3
Diode continuous forward current IS -0.4 A 3
Diode pulse current IS,pulse -8.4 A 3
Diode forward voltage VSD -0.8 -1.1 V VGS=0 V, IF=-2 A, Tj=25 °C 3

CAD (KiCad official)

  • Symbol: BSL308PEH6327
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: bsl308peh6327-etched.step / bsl308peh6327-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bsl308peh6327.step / bsl308peh6327.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 6758efe96f1ef5d0, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF