# BSL207SP H6327

**Infineon Technologies** · MOSFETs · TSOP-6

BSL207SP H6327 from Infineon Technologies, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal of the P-channel MOSFET; the device is rated VDS = -20 V with continuous drain current of -6 A at TA = 25 °C. |
| 2 | D | passive | Drain terminal of the P-channel MOSFET; the device is rated VDS = -20 V with continuous drain current of -6 A at TA = 25 °C. |
| 3 | Gate | input | Gate terminal; the gate-source voltage is rated VGS = ±12 V maximum. |
| 4 | S | passive | Source terminal of the P-channel MOSFET; the datasheet gives no separate source-pin limit beyond the device ratings. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET; the device is rated VDS = -20 V with continuous drain current of -6 A at TA = 25 °C. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET; the device is rated VDS = -20 V with continuous drain current of -6 A at TA = 25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | -20 |  |  | V | VGS=0, ID=-250µA | 2 |
| Gate threshold voltage | VGS(th) | -0.6 | -0.9 | -1.2 | V | VGS=VDS, ID=-40µA | 2 |
| Zero gate voltage drain current, Tj=25°C | IDSS |  | -0.1 | -1 | µA | VDS=-20V, VGS=0, Tj=25°C | 2 |
| Zero gate voltage drain current, Tj=150°C | IDSS |  | -10 | -100 | µA | VDS=-20V, VGS=0, Tj=150°C | 2 |
| Gate-source leakage current | IGSS |  | -10 | -100 | nA | VGS=-12V, VDS=0 | 2 |
| Drain-source on-state resistance (VGS=-2.5V) | RDS(on) |  | 43 | 65 | mΩ | VGS=-2.5V, ID=-4.9A | 2 |
| Drain-source on-state resistance (VGS=-4.5V) | RDS(on) |  | 29 | 41 | mΩ | VGS=-4.5V, ID=-6A | 2 |
| Transconductance | gfs | 7 | 14 |  | S | VDS≥2*ID*RDS(on)max, ID=-4.8A | 3 |
| Turn-on delay time | td(on) |  | 9 | 14 | ns | VDD=-10V, VGS=-4.5V, ID=-1A, RG=6Ω | 3 |
| Rise time | tr |  | 17 | 26 | ns | VDD=-10V, VGS=-4.5V, ID=-1A, RG=6Ω | 3 |
| Turn-off delay time | td(off) |  | 42 | 63 | ns | VDD=-10V, VGS=-4.5V, ID=-1A, RG=6Ω | 3 |
| Fall time | tf |  | 53 | 76 | ns | VDD=-10V, VGS=-4.5V, ID=-1A, RG=6Ω | 3 |
| Gate to source charge | Qgs |  | -1.7 | -2.6 | nC | VDD=-10V, ID=-6A | 3 |
| Gate to drain charge | Qgd |  | -7.1 | -10.7 | nC | VDD=-10V, ID=-6A | 3 |
| Gate charge total | Qg |  | -13.3 | -20 | nC | VDD=-10V, ID=-6A, VGS=0 to -4.5V | 3 |
| Inverse diode continuous forward current | IS |  |  | -2.3 | A | TA=25°C | 3 |
| Inverse diode direct current, pulsed | ISM |  |  | -24 | A |  | 3 |
| Inverse diode forward voltage | VSD |  | -0.9 | -1.3 | V | VGS=0, /IF/=/ID/ | 3 |
| Reverse recovery time | trr |  | 29 | 36 | ns | VR=-10V, /IF/=/ID/, diF/dt=100A/µs | 3 |
| Reverse recovery charge | Qrr |  | 12 | 15 | nC | VR=-10V, /IF/=/ID/, diF/dt=100A/µs | 3 |
| Continuous drain current | ID |  |  | -6 | A | TA=25°C | 1 |
| Continuous drain current | ID |  |  | -4.8 | A | TA=70°C | 1 |
| Pulsed drain current | ID puls |  |  | -24 | A | TA=25°C | 1 |
| Avalanche energy, single pulse | EAS |  |  | 44 | mJ | ID=-6 A, VDD=-10V, RGS=25Ω | 1 |
| Reverse diode dv/dt | dv/dt |  |  | -6 | kV/µs | IS=-6A, VDS=-16V, di/dt=200A/µs, Tjmax=150°C | 1 |
| Gate source voltage | VGS | -12 |  | 12 | V |  | 1 |
| Power dissipation | Ptot |  |  | 2 | W | TA=25°C | 1 |
| Operating and storage temperature | Tj, Tstg | -55 |  | 150 | °C |  | 1 |
| Thermal resistance, junction - soldering point | RthJS |  |  | 50 | K/W |  | 2 |
| Thermal resistance, junction - ambient (SMD, minimum footprint) | RthJA |  |  | 230 | K/W | Device on PCB, @ min. footprint | 2 |
| Thermal resistance, junction - ambient (SMD, 6 cm2 cooling area) | RthJA |  |  | 62.5 | K/W | Device on PCB, @ 6 cm2 cooling area | 2 |

## CAD (KiCad official)

- Symbol: `BSL207SP H6327`
- Footprint: `Package_SO:TSOP-6_1.65x3.05mm_P0.95mm`
- 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files: `bsl207sp-h6327-etched.step` / `bsl207sp-h6327-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bsl207sp-h6327.step` / `bsl207sp-h6327.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588912400082460672) (8 pp, sha256 `c5e6615dbc4438b2`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bsl207sp-h6327-datasheet.pdf)