component
BSL202SNH6327
Public Made by Adomby adom
Infineon Technologies MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBSL202SNH6327
Infineon Technologies · MOSFETs · TSOP-6
BSL202SNH6327 from Infineon Technologies, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain, pins 1, 2, 5 and 6 are connected together as the drain; VDS is 20 V max and continuous ID is 7.5 A at TA=25 °C. |
| 2 | D | passive | Drain, pins 1, 2, 5 and 6 are connected together as the drain; VDS is 20 V max and pulsed ID is 30 A at TA=25 °C. |
| 3 | G | input | Gate, super logic level 2.5 V rated with VGS(th) 0.7 to 1.2 V and maximum VGS of ±12 V. |
| 4 | S | passive | Source, the MOSFET source terminal and body diode anode, with diode continuous forward current IS of 2 A max. |
| 5 | D | passive | Drain, pins 1, 2, 5 and 6 are connected together as the drain; RDS(on) is 22 mΩ max at VGS=4.5 V. |
| 6 | D | passive | Drain, pins 1, 2, 5 and 6 are connected together as the drain; RDS(on) is 36 mΩ max at VGS=2.5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TSOP-6 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 20 | V | VGS=0 V, ID=250 µA | 2 | ||
| Gate threshold voltage | VGS(th) | 0.7 | 0.95 | 1.2 | V | VDS=VGS, ID=30 µA | 2 |
| Drain-source leakage current | IDSS | 1 | µA | VDS=20 V, VGS=0 V, Tj=25 °C | 2 | ||
| Drain-source leakage current | IDSS | 100 | µA | VDS=20 V, VGS=0 V, Tj=150 °C | 2 | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=12 V, VDS=0 V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 26 | 36 | mΩ | VGS=2.5 V, ID=5.9 A | 2 | |
| Drain-source on-state resistance | RDS(on) | 17 | 22 | mΩ | VGS=4.5 V, ID=7.5 A | 2 | |
| Transconductance | gfs | 25 | S | /VDS/>2/ID/RDS(on)max, ID=7.5 A | 2 | ||
| Thermal resistance, junction - soldering point | RthJS | 50 | K/W | 2 | |||
| Thermal resistance, junction - ambient | RthJA | 230 | K/W | minimal footprint | 2 | ||
| Thermal resistance, junction - ambient | RthJA | 62.5 | K/W | 6 cm2 cooling area | 2 | ||
| Input capacitance | Ciss | 863 | 1147 | pF | VGS=0 V, VDS=10 V, f=1 MHz | 3 | |
| Output capacitance | Coss | 278 | 370 | pF | VGS=0 V, VDS=10 V, f=1 MHz | 3 | |
| Reverse transfer capacitance | Crss | 40 | 60 | pF | VGS=0 V, VDS=10 V, f=1 MHz | 3 | |
| Gate to source charge | Qgs | 1.82 | 2.42 | nC | VDD=10 V, ID=7.5 A, VGS=0 to 4.5 V | 3 | |
| Gate to drain charge | Qgd | 1.1 | 1.6 | nC | VDD=10 V, ID=7.5 A, VGS=0 to 4.5 V | 3 | |
| Gate charge total | Qg | 5.8 | 8.7 | nC | VDD=10 V, ID=7.5 A, VGS=0 to 4.5 V | 3 | |
| Diode continuous forward current | IS | 2 | A | TA=25 °C | 3 | ||
| Diode pulse current | IS,pulse | 30 | A | TA=25 °C | 3 | ||
| Diode forward voltage | VSD | 0.8 | 1.2 | V | VGS=0 V, IF=7.5 A, Tj=25 °C | 3 | |
| Continuous drain current | ID | 7.5 | A | TA=25 °C | 1 | ||
| Continuous drain current | ID | 6 | A | TA=70 °C | 1 | ||
| Pulsed drain current | ID,pulse | 30 | A | TA=25 °C | 1 | ||
| Avalanche energy, single pulse | EAS | 30 | mJ | ID=7.5 A, RGS=25 W | 1 | ||
| Reverse diode dv/dt | dv/dt | 6 | kV/µs | ID=7.5 A, VDS=16 V, di/dt=200 A/µs, Tj,max=150 °C | 1 | ||
| Gate source voltage | VGS | -12 | 12 | V | 1 | ||
| Power dissipation | Ptot | 2 | W | TA=25 °C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Soldering temperature | 260 | °C | 1 | ||||
| Turn-on delay time | td(on) | 8.26 | ns | VDD=10 V, VGS=4.5 V, ID=7.5 A, RG,ext=6 W | 3 | ||
| Rise time | tr | 27.5 | ns | VDD=10 V, VGS=4.5 V, ID=7.5 A, RG,ext=6 W | 3 | ||
| Turn-off delay time | td(off) | 18.9 | ns | VDD=10 V, VGS=4.5 V, ID=7.5 A, RG,ext=6 W | 3 | ||
| Fall time | tf | 4.06 | ns | VDD=10 V, VGS=4.5 V, ID=7.5 A, RG,ext=6 W | 3 | ||
| Gate plateau voltage | Vplateau | 2 | V | VDD=10 V, ID=7.5 A, VGS=0 to 4.5 V | 3 | ||
| Reverse recovery time | trr | 14.7 | ns | VR=10 V, IF=7.5 A, diF/dt=100 A/µs | 3 | ||
| Reverse recovery charge | Qrr | 4.62 | nC | VR=10 V, IF=7.5 A, diF/dt=100 A/µs | 3 |
CAD (KiCad official)
- Symbol:
BSL202SNH6327 - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
bsl202snh6327-etched.step/bsl202snh6327-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bsl202snh6327.step/bsl202snh6327.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
80d41b95189f38a5, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).