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Contents

README

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BSH205G2AR

Nexperia · MOSFETs · TO-236AB

BSH205G2AR from Nexperia, in a TO-236AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the datasheet limits the gate-source voltage VGS to -8 V to 8 V at Tj = 25 °C.
2 S passive Source terminal; the datasheet limits the source current IS to -1.2 A at Tamb = 25 °C.
3 D passive Drain terminal; the datasheet limits the drain-source voltage VDS to -20 V and the continuous drain current ID to -2.6 A at Tamb = 25 °C.

Key specifications

Parameter Value
Manufacturer Nexperia
Package TO-236AB
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
drain-source voltage VDS -20 V 3
gate-source voltage VGS -8 8 V Tj = 25 °C 3
drain current ID -2.6 A VGS = -4.5 V; Tamb = 25 °C 3
drain current ID -1.6 A VGS = -4.5 V; Tamb = 100 °C 3
peak drain current IDM -10 A Tamb = 25 °C; single pulse; tp ≤ 10 µs 3
total power dissipation Ptot 610 mW Tamb = 25 °C; FR4 PCB, standard footprint 3
total power dissipation Ptot 1.3 W FR4 PCB, mounting pad for drain 6 cm2 3
total power dissipation Ptot 10 W Tsp = 25 °C 3
junction temperature Tj -55 175 °C 3
ambient temperature Tamb -55 175 °C 3
storage temperature Tstg -65 175 °C 3
source current IS -1.2 A Tamb = 25 °C 3
non-repetitive drain-source avalanche energy EDS(AL)S 5 mJ Tj(init) = 25 °C; ID = -0.5 A; DUT in avalanche (unclamped) 3
drain-source breakdown voltage V(BR)DSS -20 V ID = -250 µA; VGS = 0 V; Tj = 25 °C 6
gate-source threshold voltage VGSth -0.4 -0.65 -0.9 V ID = -250 µA; VDS = VGS; Tj = 25 °C 6
drain leakage current IDSS -1 µA VDS = -20 V; VGS = 0 V; Tj = 25 °C 6
gate leakage current IGSS -100 nA VGS = -8 V; VDS = 0 V; Tj = 25 °C 6
gate leakage current IGSS 100 nA VGS = 8 V; VDS = 0 V; Tj = 25 °C 6
drain-source on-state resistance RDSon 97 118 mΩ VGS = -4.5 V; ID = -2.6 A; Tj = 25 °C 6
drain-source on-state resistance RDSon 153 186 mΩ VGS = -4.5 V; ID = -2.6 A; Tj = 175 °C 6
drain-source on-state resistance RDSon 118 152 mΩ VGS = -2.5 V; ID = -2.3 A; Tj = 25 °C 6
drain-source on-state resistance RDSon 145 240 mΩ VGS = -1.8 V; ID = -0.5 A; Tj = 25 °C 6
drain-source on-state resistance RDSon 170 400 mΩ VGS = -1.5 V; ID = -0.1 A; Tj = 25 °C 6
source-drain voltage VSD -0.8 -1.2 V IS = -1.2 A; VGS = 0 V; Tj = 25 °C 6
thermal resistance from junction to ambient Rth(j-a) 218 250 K/W in free air; FR4 PCB, standard footprint 5
thermal resistance from junction to ambient Rth(j-a) 97 114 K/W FR4 PCB, mounting pad for drain 6 cm2 5
thermal resistance from junction to solder point Rth(j-sp) 10 15 K/W 5

CAD (KiCad official)

  • Symbol: BSH205G2AR
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: TO-236AB (KiCad packages3D, STEP)
  • 3D model files: bsh205g2ar-etched.step / bsh205g2ar-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bsh205g2ar.step / bsh205g2ar.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (15 pp, sha256 1209173b1f0e5dc1, retrieved 2026-10-29, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF