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BSD840NH6327XTSA1-VB
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VBsemi Elec MOSFETs, SC-70. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BSD840NH6327XTSA1-VB
VBsemi Elec · MOSFETs · SC-70
BSD840NH6327XTSA1-VB from VBsemi Elec, in a SC-70. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1; body diode and channel return, with VDS rated 20 V and ID up to 2.6 A. |
| 2 | G1 | input | Gate of MOSFET 1; VGS limited to ±12 V with threshold 0.5 to 2.0 V. |
| 3 | D2 | passive | Drain of MOSFET 2; VDS rated 20 V with RDS(on) 0.086 ohm at VGS = 4.5 V. |
| 4 | S2 | passive | Source of MOSFET 2; body diode and channel return, with ID up to 2.6 A. |
| 5 | G2 | input | Gate of MOSFET 2; VGS limited to ±12 V with threshold 0.5 to 2.0 V. |
| 6 | D1 | passive | Drain of MOSFET 1; VDS rated 20 V with RDS(on) 0.086 ohm at VGS = 4.5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SC-70 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | 2.6 | A | TJ = 150 °C; TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 2.2 | A | TJ = 150 °C; TC = 70 °C | 1 | ||
| Continuous Drain Current | ID | 2.3 | A | TA = 25 °C; t = 5 s | 1 | ||
| Continuous Drain Current | ID | 1.8 | A | TA = 70 °C; t = 5 s | 1 | ||
| Pulsed Drain Current | IDM | 8 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | 2.3 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | 2.1 | A | TA = 25 °C; t = 5 s | 1 | ||
| Maximum Power Dissipation | PD | 2.7 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.7 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.5 | W | TA = 25 °C; t = 5 s | 1 | ||
| Maximum Power Dissipation | PD | 1 | W | TA = 70 °C; t = 5 s | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 130 | 170 | °C/W | t ≤ 5 s | 1 | |
| Maximum Junction-to-Ambient (steady state) | RthJA | 220 | °C/W | Steady state (note d) | 1 | ||
| Maximum Junction-to-Foot (Drain) | RthJF | 80 | 100 | °C/W | Steady state | 1 | |
| Drain-Source Breakdown Voltage | VDS | 20 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 0.5 | 2 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -25 | 25 | µA | VDS = 0 V, VGS = ±8 V | 2 | |
| Gate-Source Leakage | IGSS | 1 | µA | VDS = 0 V, VGS = ±4.5 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 20 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 20 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 4 | A | VDS ≤ 5 V, VGS = 4.5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.086 | Ω | VGS = 4.5 V, ID = 1 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.11 | Ω | VGS = 2.5 V, ID = 1 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.18 | Ω | VGS = 1.8 V, ID = 0.2 A | 2 | ||
| Gate Resistance | Rg | 0.4 | 1.9 | 3.8 | kΩ | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 43 | 65 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 80 | 120 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 480 | 720 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 220 | 330 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time | td(on) | 22 | 33 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 8 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 46 | 70 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 8 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 645 | 968 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 8 V, Rg = 1 Ω | 2 | |
| Fall Time | tr | 215 | 323 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 8 V, Rg = 1 Ω | 2 | |
| Continuous Source-Drain Diode Current | IS | 2.6 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | 4 | A | 2 | |||
| Body Diode Voltage | VSD | 0.8 | 1.2 | V | IS = 1.2 A, VGS = 0 V | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 2 | 4 | nC | 2 | ||
| Total Gate Charge | Qg | 5 | nC | VDS = 10 V, VGS = 8 V, ID = 1.5 A | 2 | ||
| Total Gate Charge | Qg | 3 | nC | VDS = 10 V, VGS = 4.5 V, ID = 1.5 A | 2 | ||
| Gate-Source Charge | Qgs | 1 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 2 | nC | 2 | |||
| Forward Transconductance | gfs | 4 | S | VDS = 4 V, ID = 1.5 A | 2 | ||
| Drain-Source VDS Temperature Coefficient | ΔVDS/TJ | 20 | mV/°C | ID = 250 µA | 2 | ||
| VGS(th) Temperature Coefficient | ΔVGS(th)/TJ | -2.3 | mV/°C | 2 | |||
| Reverse Recovery Fall Time | ta | 5 | ns | 2 | |||
| Reverse Recovery Rise Time | tb | 4 | ns | 2 |
CAD (KiCad official)
- Symbol:
BSD840NH6327XTSA1-VB - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SC-70 (KiCad packages3D, STEP)
- 3D model files:
bsd840nh6327xtsa1-vb-etched.step/bsd840nh6327xtsa1-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bsd840nh6327xtsa1-vb.step/bsd840nh6327xtsa1-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
43009cba85bfd3ff, retrieved 2026-11-07, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BSD840NH6327XTSA1-VB
**VBsemi Elec** · MOSFETs · SC-70
BSD840NH6327XTSA1-VB from VBsemi Elec, in a SC-70. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1; body diode and channel return, with VDS rated 20 V and ID up to 2.6 A. |
| 2 | G1 | input | Gate of MOSFET 1; VGS limited to ±12 V with threshold 0.5 to 2.0 V. |
| 3 | D2 | passive | Drain of MOSFET 2; VDS rated 20 V with RDS(on) 0.086 ohm at VGS = 4.5 V. |
| 4 | S2 | passive | Source of MOSFET 2; body diode and channel return, with ID up to 2.6 A. |
| 5 | G2 | input | Gate of MOSFET 2; VGS limited to ±12 V with threshold 0.5 to 2.0 V. |
| 6 | D1 | passive | Drain of MOSFET 1; VDS rated 20 V with RDS(on) 0.086 ohm at VGS = 4.5 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SC-70 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 20 | V | | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Continuous Drain Current | ID | | | 2.6 | A | TJ = 150 °C; TC = 25 °C | 1 |
| Continuous Drain Current | ID | | | 2.2 | A | TJ = 150 °C; TC = 70 °C | 1 |
| Continuous Drain Current | ID | | | 2.3 | A | TA = 25 °C; t = 5 s | 1 |
| Continuous Drain Current | ID | | | 1.8 | A | TA = 70 °C; t = 5 s | 1 |
| Pulsed Drain Current | IDM | | | 8 | A | | 1 |
| Continuous Source-Drain Diode Current | IS | | | 2.3 | A | TC = 25 °C | 1 |
| Continuous Source-Drain Diode Current | IS | | | 2.1 | A | TA = 25 °C; t = 5 s | 1 |
| Maximum Power Dissipation | PD | | | 2.7 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 1.7 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation | PD | | | 1.5 | W | TA = 25 °C; t = 5 s | 1 |
| Maximum Power Dissipation | PD | | | 1 | W | TA = 70 °C; t = 5 s | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient | RthJA | | 130 | 170 | °C/W | t ≤ 5 s | 1 |
| Maximum Junction-to-Ambient (steady state) | RthJA | | | 220 | °C/W | Steady state (note d) | 1 |
| Maximum Junction-to-Foot (Drain) | RthJF | | 80 | 100 | °C/W | Steady state | 1 |
| Drain-Source Breakdown Voltage | VDS | 20 | | | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 0.5 | | 2 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Source Leakage | IGSS | -25 | | 25 | µA | VDS = 0 V, VGS = ±8 V | 2 |
| Gate-Source Leakage | IGSS | | | 1 | µA | VDS = 0 V, VGS = ±4.5 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 20 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | µA | VDS = 20 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | 4 | | | A | VDS ≤ 5 V, VGS = 4.5 V | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.086 | Ω | VGS = 4.5 V, ID = 1 A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.11 | Ω | VGS = 2.5 V, ID = 1 A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | | 0.18 | Ω | VGS = 1.8 V, ID = 0.2 A | 2 |
| Gate Resistance | Rg | 0.4 | 1.9 | 3.8 | kΩ | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | | 43 | 65 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Rise Time | tr | | 80 | 120 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 480 | 720 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Fall Time | tf | | 220 | 330 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω | 2 |
| Turn-On Delay Time | td(on) | | 22 | 33 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 8 V, Rg = 1 Ω | 2 |
| Rise Time | tr | | 46 | 70 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 8 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 645 | 968 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 8 V, Rg = 1 Ω | 2 |
| Fall Time | tr | | 215 | 323 | ns | VDD = 10 V, RL = 8.3 Ω, ID ≅ 1.2 A, VGEN = 8 V, Rg = 1 Ω | 2 |
| Continuous Source-Drain Diode Current | IS | | | 2.6 | A | TC = 25 °C | 2 |
| Pulse Diode Forward Current | ISM | | | 4 | A | | 2 |
| Body Diode Voltage | VSD | | 0.8 | 1.2 | V | IS = 1.2 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 2 | 4 | nC | | 2 |
| Total Gate Charge | Qg | | 5 | | nC | VDS = 10 V, VGS = 8 V, ID = 1.5 A | 2 |
| Total Gate Charge | Qg | | 3 | | nC | VDS = 10 V, VGS = 4.5 V, ID = 1.5 A | 2 |
| Gate-Source Charge | Qgs | | 1 | | nC | | 2 |
| Gate-Drain Charge | Qgd | | 2 | | nC | | 2 |
| Forward Transconductance | gfs | | 4 | | S | VDS = 4 V, ID = 1.5 A | 2 |
| Drain-Source VDS Temperature Coefficient | ΔVDS/TJ | | 20 | | mV/°C | ID = 250 µA | 2 |
| VGS(th) Temperature Coefficient | ΔVGS(th)/TJ | | -2.3 | | mV/°C | | 2 |
| Reverse Recovery Fall Time | ta | | 5 | | ns | | 2 |
| Reverse Recovery Rise Time | tb | | 4 | | ns | | 2 |
## CAD (KiCad official)
- Symbol: `BSD840NH6327XTSA1-VB`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SC-70 (KiCad packages3D, STEP)
- 3D model files: `bsd840nh6327xtsa1-vb-etched.step` / `bsd840nh6327xtsa1-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bsd840nh6327xtsa1-vb.step` / `bsd840nh6327xtsa1-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604440051938320384) (8 pp, sha256 `43009cba85bfd3ff`, retrieved 2026-11-07, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bsd840nh6327xtsa1-vb-datasheet.pdf)