component
BSD314SPE H6327
Public Made by Adomby adom
Infineon Technologies MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 19d ago |
| viewers | 19d ago |
| bsd314spe-h6327-etched.glb | 19d ago |
| bsd314spe-h6327-etched.step | 19d ago |
| bsd314spe-h6327-hero.glb | 19d ago |
| bsd314spe-h6327-hero.overlay.json | 19d ago |
| bsd314spe-h6327.glb | 19d ago |
| bsd314spe-h6327.kicad_mod | 19d ago |
| bsd314spe-h6327.kicad_sym | 19d ago |
| bsd314spe-h6327.lbr | 19d ago |
| bsd314spe-h6327.step | 19d ago |
| package.json | 19d ago |
| page.json | 19d ago |
| README.md | 19d ago |
BSD314SPE H6327
Infineon Technologies · MOSFETs · SOT-363
BSD314SPE H6327 from Infineon Technologies, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain, tied internally with pins 2, 5 and 6 (symbol marks 1,2,5,6); VDS rated -30 V and continuous drain current -1.5 A at TA=25 °C. |
| 2 | D | passive | Drain, tied internally with pins 1, 5 and 6; VDS rated -30 V and continuous drain current -1.5 A at TA=25 °C. |
| 3 | G | input | Gate, ESD protected and logic level (4.5 V rated), with VGS limited to ±20 V. |
| 4 | S | passive | Source of the P-channel MOSFET, with body diode continuous forward current of -0.5 A. |
| 5 | D | passive | Drain, tied internally with pins 1, 2 and 6; pulsed drain current -6.1 A at TA=25 °C. |
| 6 | D | passive | Drain, tied internally with pins 1, 2 and 5; RDS(on) max 140 mΩ at VGS=-10 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-363 |
| Category | Transistors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | -30 | V | VGS=0V, ID=-250µA | 2 | ||
| Gate threshold voltage | VGS(th) | -1 | -1.5 | -2 | V | VDS=VGS, ID=-6.3µA | 2 |
| Drain-source leakage current | IDSS | -1 | mA | VDS=-30V, VGS=0V, Tj=25 °C | 2 | ||
| Drain-source leakage current | IDSS | -100 | mA | VDS=-30V, VGS=0V, Tj=150 °C | 2 | ||
| Gate-source leakage current | IGSS | -5 | μA | VGS=-20V, VDS=0V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 153 | 230 | mW | VGS=-4.5V, ID=-1.2A | 2 | |
| Drain-source on-state resistance | RDS(on) | 107 | 140 | mW | VGS=-10V, ID=-1.5A | 2 | |
| Transconductance | gfs | 3 | S | /VDS/>2/ID/RDS(on)max, ID=-1.2 A | 2 | ||
| Input capacitance | Ciss | 221 | 294 | pF | VGS=0 V, VDS=-15 V, f=1 MHz | 3 | |
| Output capacitance | Coss | 126 | 168 | pF | VGS=0 V, VDS=-15 V, f=1 MHz | 3 | |
| Reverse transfer capacitance | Crss | 7 | 11 | pF | VGS=0 V, VDS=-15 V, f=1 MHz | 3 | |
| Diode continuous forward current | IS | -0.5 | A | TA=25 °C | 3 | ||
| Diode pulse current | IS,pulse | -6.1 | A | TA=25 °C | 3 | ||
| Diode forward voltage | VSD | 0.8 | 1.1 | V | VGS=0 V, IF=-1.5A, Tj=25 °C | 3 | |
| Thermal resistance, junction-ambient | RthJA | 250 | K/W | minimal footprint | 2 | ||
| Continuous drain current | ID | -1.5 | A | TA=25 °C | 1 | ||
| Continuous drain current | ID | -1.2 | A | TA=70 °C | 1 | ||
| Pulsed drain current | ID,pulse | -6.1 | A | TA=25 °C | 1 | ||
| Avalanche energy, single pulse | EAS | 6 | mJ | ID=-1.5A, RGS=25 W | 1 | ||
| Reverse diode dv/dt | dv/dt | 6 | kV/µs | ID=-1.5 A, VDS=-16V, di/dt=-200A/µs, Tj,max=150 °C | 1 | ||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Power dissipation | Ptot | 0.5 | W | TA=25 °C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Soldering temperature | 260 | °C | 1 | ||||
| Turn-on delay time | td(on) | 5.1 | ns | VDD=-15V, VGS=-10 V, ID=-1.5 A, RG,ext=6 W | 3 | ||
| Rise time | tr | 3.9 | ns | VDD=-15V, VGS=-10 V, ID=-1.5 A, RG,ext=6 W | 3 | ||
| Turn-off delay time | td(off) | 12.4 | ns | VDD=-15V, VGS=-10 V, ID=-1.5 A, RG,ext=6 W | 3 | ||
| Fall time | tf | 2.8 | ns | VDD=-15V, VGS=-10 V, ID=-1.5 A, RG,ext=6 W | 3 | ||
| Gate to source charge | Qgs | -0.7 | nC | VDD=-15 V, ID=-1.5 A, VGS=0 to -10 V | 3 | ||
| Gate to drain charge | Qgd | -0.3 | nC | VDD=-15 V, ID=-1.5 A, VGS=0 to -10 V | 3 | ||
| Gate charge total | Qg | -2.9 | nC | VDD=-15 V, ID=-1.5 A, VGS=0 to -10 V | 3 | ||
| Gate plateau voltage | Vplateau | -3.2 | V | VDD=-15 V, ID=-1.5 A, VGS=0 to -10 V | 3 | ||
| Reverse recovery time | trr | 12.5 | ns | VR=-15 V, IF=-1.5A, diF/dt=100 A/µs | 3 | ||
| Reverse recovery charge | Qrr | 4.3 | nC | VR=-15 V, IF=-1.5A, diF/dt=100 A/µs | 3 |
CAD (KiCad official)
- Symbol:
BSD314SPE H6327 - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
bsd314spe-h6327-etched.step/bsd314spe-h6327-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bsd314spe-h6327.step/bsd314spe-h6327.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
585f36d09e519922, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).