component

BSD235CH6327

Public Made by Adom

by adom

Infineon Technologies MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistorsbsd235ch6327factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 6d ago
viewers bsd235ch6327: viewers · Ray 6d ago
bsd235ch6327-etched.glb Publish 0.1.0 · Ray 6d ago
bsd235ch6327-etched.step bsd235ch6327: factory component page (tier=lcsc) · Ray 6d ago
bsd235ch6327-hero.glb bsd235ch6327: hero GLB from the etched model (keeps the MPN mark) · Ray 6d ago
bsd235ch6327-hero.overlay.json Publish 0.1.0 · Ray 6d ago
bsd235ch6327.glb Publish 0.1.0 · Ray 6d ago
bsd235ch6327.kicad_mod Publish 0.1.0 · Ray 6d ago
bsd235ch6327.kicad_sym Publish 0.1.0 · Ray 6d ago
bsd235ch6327.lbr Publish 0.1.0 · Ray 6d ago
bsd235ch6327.step Publish 0.1.0 · Ray 6d ago
package.json Publish 0.1.0 · Ray 6d ago
page.json Set visibility: public · Ray 6d ago
README.md Publish 0.1.0 · Ray 6d ago

BSD235CH6327

Infineon Technologies · MOSFETs · SOT-363

BSD235CH6327 from Infineon Technologies, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 source (N) passive Source of the N-channel MOSFET (20 V, 0.95 A, RDS(on) max 350 mΩ at VGS=4.5 V).
2 gate (N) input Gate of the N-channel MOSFET, rated ±12 V maximum VGS with a 1.2 V maximum threshold at 1.6 µA.
3 drain (P) passive Drain of the P-channel MOSFET (-20 V, -0.53 A, RDS(on) max 1200 mΩ at VGS=-4.5 V).
4 source (P) passive Source of the P-channel MOSFET.
5 gate (P) input Gate of the P-channel MOSFET, rated ±12 V maximum VGS with a -1.2 V minimum threshold at -1.5 µA.
6 drain (N) passive Drain of the N-channel MOSFET, 20 V maximum VDS, 0.95 A continuous at TA=25 °C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-363
Category Transistors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current (P-channel) ID -0.53 A TA=25 °C 1
Continuous drain current (N-channel) ID 0.95 A TA=25 °C 1
Continuous drain current (P-channel) ID -0.46 A TA=70 °C 1
Continuous drain current (N-channel) ID 0.76 A TA=70 °C 1
Pulsed drain current (P-channel) ID,pulse -2.1 A TA=25 °C 1
Pulsed drain current (N-channel) ID,pulse 3.8 A TA=25 °C 1
Avalanche energy, single pulse (P-channel) EAS 1.4 mJ ID=-0.53 A, RGS=25 W 1
Avalanche energy, single pulse (N-channel) EAS 1.6 mJ ID=0.95 A, RGS=25 W 1
Gate source voltage VGS -12 12 V 1
Power dissipation Ptot 0.5 W TA=25 °C 1
Operating and storage temperature Tj, Tstg -55 150 °C 1
Soldering temperature Tsolder 260 °C 1
Drain-source breakdown voltage (P-channel) V(BR)DSS -20 V VGS=0 V, ID=-250 µA 2
Drain-source breakdown voltage (N-channel) V(BR)DSS 20 V VGS=0 V, ID=250 µA 2
Gate threshold voltage (P-channel) VGS(th) -1.2 -0.9 -0.6 V VDS=VGS, ID=-1.5 µA 2
Gate threshold voltage (N-channel) VGS(th) 0.7 0.95 1.2 V VDS=VGS, ID=1.6 µA 2
Zero gate voltage drain current (P-channel) IDSS -1 µA VDS=-20 V, VGS=0 V, Tj=25 °C 2
Zero gate voltage drain current (N-channel) IDSS 1 µA VDS=20 V, VGS=0 V, Tj=25 °C 2
Zero gate voltage drain current (P-channel) IDSS -100 µA VDS=-20 V, VGS=0 V, Tj=150 °C 2
Zero gate voltage drain current (N-channel) IDSS 100 µA VDS=20 V, VGS=0 V, Tj=150 °C 2
Drain-source on-state resistance (P-channel) RDS(on) 1221 2100 mW VGS=-2.5 V, ID=-0.17 A 2
Drain-source on-state resistance (N-channel) RDS(on) 415 600 mW VGS=2.5 V, ID=0.29 A 2
Drain-source on-state resistance (P-channel) RDS(on) 745 1200 mW VGS=-4.5 V, ID=-0.53 A 2
Drain-source on-state resistance (N-channel) RDS(on) 266 350 mW VGS=4.5 V, ID=0.95 A 2
Gate-source leakage current IGSS -100 100 nA VGS=±12 V, VDS=0 V 2
Thermal resistance, junction - ambient (minimal footprint) RthJA 250 K/W minimal footprint 2
Diode continuous forward current (P-channel) IS -0.42 A TC=25 °C 4
Diode continuous forward current (N-channel) IS 0.5 A TC=25 °C 4
Diode pulse current (P-channel) IS,pulse -2.1 A 4
Diode pulse current (N-channel) IS,pulse 3.8 A 4
Diode forward voltage (P-channel) VSD -1 -1.2 V VGS=0 V, IF=-0.53 A, Tj=25 °C 4
Diode forward voltage (N-channel) VSD 0.9 1.1 V VGS=0 V, IF=0.95 A, Tj=25 °C 4

CAD (KiCad official)

  • Symbol: BSD235CH6327
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: bsd235ch6327-etched.step / bsd235ch6327-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bsd235ch6327.step / bsd235ch6327.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (13 pp, sha256 36627c14ac68b261, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF