component
BSC900N20NS3 G-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
BSC900N20NS3 G-VB
VBsemi Elec · MOSFETs · DFN5x6-8
BSC900N20NS3 G-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (pin 1, marked by the dot); VDS is rated 200 V and continuous drain current is 30 A at TC = 25 °C. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, connected in parallel with the other source pins; VDS is rated 200 V and continuous drain current is 30 A at TC = 25 °C. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, connected in parallel with the other source pins; VDS is rated 200 V and continuous drain current is 30 A at TC = 25 °C. |
| 4 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated ±20 V. |
| 5 | D | passive | Drain terminal of the MOSFET, connected in parallel with the other drain pins; VDS is rated 200 V and pulsed drain current is 70 A. |
| 6 | D | passive | Drain terminal of the MOSFET, connected in parallel with the other drain pins; VDS is rated 200 V and pulsed drain current is 70 A. |
| 7 | D | passive | Drain terminal of the MOSFET, connected in parallel with the other drain pins; VDS is rated 200 V and pulsed drain current is 70 A. |
| 8 | D | passive | Drain terminal of the MOSFET, connected in parallel with the other drain pins; VDS is rated 200 V and pulsed drain current is 70 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | DFN5x6-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 200 | V | 1 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous drain current | ID | 30 | A | TJ = 150 °C; TC = 25 °C | 1 | ||
| Continuous drain current | ID | 23 | A | TJ = 150 °C; TC = 70 °C | 1 | ||
| Continuous drain current | ID | 7.6 | A | TA = 25 °C; notes b, c | 1 | ||
| Continuous drain current | ID | 5.9 | A | TA = 70 °C; notes b, c | 1 | ||
| Pulsed drain current | IDM | 70 | A | t = 100 μs | 1 | ||
| Continuous source-drain diode current | IS | 30 | A | TC = 25 °C | 1 | ||
| Continuous source-drain diode current | IS | 5.6 | A | TA = 25 °C; notes b, c | 1 | ||
| Single pulse avalanche current | IAS | 30 | A | L = 0.1 mH | 1 | ||
| Single pulse avalanche energy | EAS | 45 | mJ | 1 | |||
| Maximum power dissipation | PD | 6.25 | W | TA = 25 °C; notes b, c | 1 | ||
| Maximum power dissipation | PD | 4 | W | TA = 70 °C; notes b, c | 1 | ||
| Operating junction and storage temperature range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering recommendations (peak temperature) | 260 | °C | peak temperature; note c | 1 | |||
| Maximum junction-to-ambient | RthJA | 15 | 20 | °C/W | t ≤ 10 s; surface mounted | 1 | |
| Maximum junction-to-ambient (steady state) | RthJA | 54 | °C/W | steady state (note f) | 1 | ||
| Drain-source breakdown voltage | VDS | 200 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-source threshold voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-source leakage | IGSS | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | μA | VDS = 200 V, VGS = 0 V | 2 | ||
| Zero gate voltage drain current | IDSS | 15 | μA | VDS = 200 V, VGS = 0 V, TJ = 70 °C | 2 | ||
| On-state drain current | ID(on) | 30 | A | VDS ≥ 10 V, VGS = 10 V | 2 | ||
| Gate resistance | Rg | 0.6 | 2.1 | 4 | Ω | f = 1 MHz | 2 |
| Rise time | tr | 20 | 40 | ns | VDD = 100 V, RL = 10 Ω, ID = 10 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-off delay time | td(off) | 20 | 40 | ns | VDD = 100 V, RL = 10 Ω, ID = 10 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Fall time | tf | 24 | 48 | ns | VDD = 100 V, RL = 10 Ω, ID = 10 A, VGEN = 10 V, Rg = 1 Ω | 2 | |
| Turn-on delay time | td(on) | 11 | 22 | ns | VDD = 100 V, RL = 10 Ω, ID = 10 A, VGEN = 7.5 V, Rg = 1 Ω | 2 | |
| Rise time | tr | 27 | 54 | ns | VDD = 100 V, RL = 10 Ω, ID = 10 A, VGEN = 7.5 V, Rg = 1 Ω | 2 | |
| Turn-off delay time | td(off) | 18 | 36 | ns | VDD = 100 V, RL = 10 Ω, ID = 10 A, VGEN = 7.5 V, Rg = 1 Ω | 2 | |
| Total gate charge | Qg | 25 | 38 | nC | VDS = 100 V, VGS = 10 V, ID = 10 A | 2 | |
| Total gate charge | Qg | 20 | 30 | nC | VDS = 100 V, VGS = 7.5 V, ID = 10 A | 2 | |
| Continuous source-drain diode current | IS | 35.4 | A | TC = 25 °C | 2 | ||
| Pulse diode forward current | ISM | 80 | A | 2 | |||
| Body diode voltage | VSD | 0.77 | 1.1 | V | IS = 5 A, VGS = 0 V | 2 | |
| Body diode reverse recovery time | trr | 100 | 200 | ns | IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C | 2 | |
| Body diode reverse recovery charge | Qrr | 400 | 800 | nC | IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | d. The DFN5X 6X is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process | 1 |
CAD (KiCad official)
- Symbol:
BSC900N20NS3 G-VB - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files:
bsc900n20ns3-g-vb-etched.step/bsc900n20ns3-g-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bsc900n20ns3-g-vb.step/bsc900n20ns3-g-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
dc37bf9c66e7b8f3, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BSC900N20NS3 G-VB
**VBsemi Elec** · MOSFETs · DFN5x6-8
BSC900N20NS3 G-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (pin 1, marked by the dot); VDS is rated 200 V and continuous drain current is 30 A at TC = 25 °C. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, connected in parallel with the other source pins; VDS is rated 200 V and continuous drain current is 30 A at TC = 25 °C. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, connected in parallel with the other source pins; VDS is rated 200 V and continuous drain current is 30 A at TC = 25 °C. |
| 4 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated ±20 V. |
| 5 | D | passive | Drain terminal of the MOSFET, connected in parallel with the other drain pins; VDS is rated 200 V and pulsed drain current is 70 A. |
| 6 | D | passive | Drain terminal of the MOSFET, connected in parallel with the other drain pins; VDS is rated 200 V and pulsed drain current is 70 A. |
| 7 | D | passive | Drain terminal of the MOSFET, connected in parallel with the other drain pins; VDS is rated 200 V and pulsed drain current is 70 A. |
| 8 | D | passive | Drain terminal of the MOSFET, connected in parallel with the other drain pins; VDS is rated 200 V and pulsed drain current is 70 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | DFN5x6-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | | | 200 | V | | 1 |
| Gate-source voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous drain current | ID | | | 30 | A | TJ = 150 °C; TC = 25 °C | 1 |
| Continuous drain current | ID | | | 23 | A | TJ = 150 °C; TC = 70 °C | 1 |
| Continuous drain current | ID | | | 7.6 | A | TA = 25 °C; notes b, c | 1 |
| Continuous drain current | ID | | | 5.9 | A | TA = 70 °C; notes b, c | 1 |
| Pulsed drain current | IDM | | | 70 | A | t = 100 μs | 1 |
| Continuous source-drain diode current | IS | | | 30 | A | TC = 25 °C | 1 |
| Continuous source-drain diode current | IS | | | 5.6 | A | TA = 25 °C; notes b, c | 1 |
| Single pulse avalanche current | IAS | | | 30 | A | L = 0.1 mH | 1 |
| Single pulse avalanche energy | EAS | | | 45 | mJ | | 1 |
| Maximum power dissipation | PD | | | 6.25 | W | TA = 25 °C; notes b, c | 1 |
| Maximum power dissipation | PD | | | 4 | W | TA = 70 °C; notes b, c | 1 |
| Operating junction and storage temperature range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Soldering recommendations (peak temperature) | | | | 260 | °C | peak temperature; note c | 1 |
| Maximum junction-to-ambient | RthJA | | 15 | 20 | °C/W | t ≤ 10 s; surface mounted | 1 |
| Maximum junction-to-ambient (steady state) | RthJA | | | 54 | °C/W | steady state (note f) | 1 |
| Drain-source breakdown voltage | VDS | 200 | | | V | VGS = 0 V, ID = 250 μA | 2 |
| Gate-source threshold voltage | VGS(th) | 2 | | 4 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-source leakage | IGSS | | | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 |
| Zero gate voltage drain current | IDSS | | | 1 | μA | VDS = 200 V, VGS = 0 V | 2 |
| Zero gate voltage drain current | IDSS | | | 15 | μA | VDS = 200 V, VGS = 0 V, TJ = 70 °C | 2 |
| On-state drain current | ID(on) | 30 | | | A | VDS ≥ 10 V, VGS = 10 V | 2 |
| Gate resistance | Rg | 0.6 | 2.1 | 4 | Ω | f = 1 MHz | 2 |
| Rise time | tr | | 20 | 40 | ns | VDD = 100 V, RL = 10 Ω, ID = 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-off delay time | td(off) | | 20 | 40 | ns | VDD = 100 V, RL = 10 Ω, ID = 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Fall time | tf | | 24 | 48 | ns | VDD = 100 V, RL = 10 Ω, ID = 10 A, VGEN = 10 V, Rg = 1 Ω | 2 |
| Turn-on delay time | td(on) | | 11 | 22 | ns | VDD = 100 V, RL = 10 Ω, ID = 10 A, VGEN = 7.5 V, Rg = 1 Ω | 2 |
| Rise time | tr | | 27 | 54 | ns | VDD = 100 V, RL = 10 Ω, ID = 10 A, VGEN = 7.5 V, Rg = 1 Ω | 2 |
| Turn-off delay time | td(off) | | 18 | 36 | ns | VDD = 100 V, RL = 10 Ω, ID = 10 A, VGEN = 7.5 V, Rg = 1 Ω | 2 |
| Total gate charge | Qg | | 25 | 38 | nC | VDS = 100 V, VGS = 10 V, ID = 10 A | 2 |
| Total gate charge | Qg | | 20 | 30 | nC | VDS = 100 V, VGS = 7.5 V, ID = 10 A | 2 |
| Continuous source-drain diode current | IS | | | 35.4 | A | TC = 25 °C | 2 |
| Pulse diode forward current | ISM | | | 80 | A | | 2 |
| Body diode voltage | VSD | | 0.77 | 1.1 | V | IS = 5 A, VGS = 0 V | 2 |
| Body diode reverse recovery time | trr | | 100 | 200 | ns | IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C | 2 |
| Body diode reverse recovery charge | Qrr | | 400 | 800 | nC | IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | | d. The DFN5X 6X is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process | 1 |
## CAD (KiCad official)
- Symbol: `BSC900N20NS3 G-VB`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files: `bsc900n20ns3-g-vb-etched.step` / `bsc900n20ns3-g-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bsc900n20ns3-g-vb.step` / `bsc900n20ns3-g-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/bsc900n20ns3-g-vb-datasheet.pdf) (8 pp, sha256 `dc37bf9c66e7b8f3`, retrieved 2026-10-30, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bsc900n20ns3-g-vb-datasheet.pdf)