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Ray Publish 0.1.0 0d85b50 13d ago

BSC190N15NS3G

Tokmas · MOSFETs · DFN-8(5x6)

BSC190N15NS3G from Tokmas, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal (Pin 1-3 tied to source) of the N-channel MOSFET rated VDS 150V, ID 50A.
2 S passive Source terminal (Pin 1-3 tied to source) of the N-channel MOSFET rated VDS 150V, ID 50A.
3 S passive Source terminal (Pin 1-3 tied to source) of the N-channel MOSFET rated VDS 150V, ID 50A.
4 G input Gate terminal with VGS rated ±20V and threshold VGS(th) 2.5V to 4.5V.
5 D passive Drain terminal (Pin 5-8 tied to drain), continuous drain current 50A and pulsed 200A.
6 D passive Drain terminal (Pin 5-8 tied to drain), continuous drain current 50A and pulsed 200A.
7 D passive Drain terminal (Pin 5-8 tied to drain), continuous drain current 50A and pulsed 200A.
8 D passive Drain terminal (Pin 5-8 tied to drain), continuous drain current 50A and pulsed 200A.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Tokmas
Package DFN-8(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 150 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Continuous Drain Current ID 50 A TC=25℃; calculated from max junction temperature (note 1) 1
Pulsed Drain Current IDM 200 A Repetitive; pulse width limited by max junction temperature (note 2) 1
Power Dissipation PD 110 W TC=25℃; based on max junction temperature, junction-case thermal resistance (note 3) 1
Single Pulse Avalanche Energy EAS 29 mJ VDD=50V, VGS=10V, L=0.3mH, starting Tj=25℃ (note 5) 1
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 ℃ 1
Thermal Resistance, Junction to Case RθJC 1.14 ℃/W 1
Thermal Resistance, Junction to Ambient RθJA 62 ℃/W Mounted on 1 in² FR-4 board with 2oz Cu, still air, Ta=25℃ (note 4) 1
Drain-Source Breakdown Voltage BVDSS 150 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS=0V, VDS=135V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0A 2
Gate-Source Threshold Voltage VGS(th) 2.5 4.5 V VGS=VDS, ID=250μA 2
Drain-Source On Resistance RDS(ON) 14 18 mΩ VGS=10V, ID=20A 2
Diode Forward Voltage VSD 1.3 V VGS=0V, ISD=20A 2
Continuous Drain Current (body diode) IS 50 A VD=VG=0V 2
Pulsed Drain Current (body diode) ISM 200 A 2

CAD (KiCad official)

  • Symbol: BSC190N15NS3G
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: bsc190n15ns3g-etched.step / bsc190n15ns3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bsc190n15ns3g.step / bsc190n15ns3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Tokmas datasheet (5 pp, sha256 1a1de309a4fd77ca, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF