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BSC190N15NS3G-VB

Public Made by Adom

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VBsemi Elec MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorbsc190n15ns3g-vbfactory-2.0.0extractor-text

Verified BSC190N15NS3G-VB

by Ray · last 31 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

31 Oct 2026RayPublished by the parts factory: tier lcsc, 9 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: BSC190N15NS3G-VB · DFN5x6-8 · 9 pins
  • ✓copper: 16 copper pads, none touching another net
  • ✓datasheet: all 9 pin names found in the 8-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: DFN-S-8-1EP_6x5mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-l0uwzrdx/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 9 pins = 9 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 9 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ bsc190n15ns3g-vb.kicad_sym✓ bsc190n15ns3g-vb.kicad_mod✓ bsc190n15ns3g-vb.step
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Ray Publish 0.1.0 6224bdf 6d ago

BSC190N15NS3G-VB

VBsemi Elec · MOSFETs · DFN5x6-8

BSC190N15NS3G-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET, with continuous source-drain diode current IS rated 60 A at TC = 25 °C.
2 S passive Source terminal of the N-channel MOSFET, with continuous source-drain diode current IS rated 60 A at TC = 25 °C.
3 S passive Source terminal of the N-channel MOSFET, with continuous source-drain diode current IS rated 60 A at TC = 25 °C.
4 G input Gate terminal of the N-channel MOSFET, with maximum gate-source voltage of ±20 V and threshold VGS(th) of 2.0 V min to 4.0 V max.
5 D passive Drain terminal of the N-channel MOSFET, rated 150 V drain-source voltage and 53.7 A continuous drain current at TC = 25 °C.
6 D passive Drain terminal of the N-channel MOSFET, rated 150 V drain-source voltage and 53.7 A continuous drain current at TC = 25 °C.
7 D passive Drain terminal of the N-channel MOSFET, rated 150 V drain-source voltage and 53.7 A continuous drain current at TC = 25 °C.
8 D passive Drain terminal of the N-channel MOSFET, rated 150 V drain-source voltage and 53.7 A continuous drain current at TC = 25 °C.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package DFN5x6-8
Category Triode/MOS Tube/Transistor
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 150 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Continuous Drain Current ID 53.7 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID 43 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current ID 12.8 A TJ = 150 °C, TA = 25 °C, b, c 1
Continuous Drain Current ID 10.2 A TJ = 150 °C, TA = 70 °C, b, c 1
Pulsed Drain Current IDM 130 A t = 300 µs 1
Continuous Source-Drain Diode Current IS 60 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 5.6 A TA = 25 °C, b, c 1
Single Pulse Avalanche Current IAS 30 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 45 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 104 W TC = 25 °C 1
Maximum Power Dissipation PD 66.6 W TC = 70 °C 1
Maximum Power Dissipation PD 6.25 W TA = 25 °C, b, c 1
Maximum Power Dissipation PD 4 W TA = 70 °C, b, c 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Peak Temperature 260 °C d, e 1
Junction-to-Ambient Thermal Resistance RthJA 15 20 °C/W t ≤ 10 s, b, f 1
Junction-to-Case (Drain) Thermal Resistance RthJC 0.9 1.2 °C/W Steady State 1
Drain-Source Breakdown Voltage VDS 150 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 150 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 150 V, VGS = 0 V, TJ = 70 °C 2
On-State Drain Current ID(on) 40 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.0158 Ω VGS = 10 V, ID = 20 A 2
Drain-Source On-State Resistance RDS(on) 0.0188 Ω VGS = 7.5 V, ID = 15 A 2
Forward Transconductance gfs 30 S VDS = 10 V, ID = 20 A 2
Total Gate Charge Qg 31.3 47 nC VDS = 75 V, VGS = 10 V, ID = 20 A 2
Total Gate Charge Qg 22.8 35 nC VDS = 75 V, VGS = 7.5 V, ID = 20 A 2
Output Charge Qoss 66 100 nC VDS = 75 V, VGS = 0 V 2
Turn-On Delay Time td(on) 10 20 ns VDD = 75 V, RL = 3.75 Ω, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 12 24 ns VDD = 75 V, RL = 3.75 Ω, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 15 30 ns VDD = 75 V, RL = 3.75 Ω, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 7 14 ns VDD = 75 V, RL = 3.75 Ω, VGEN = 10 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 12 24 ns VDD = 75 V, RL = 3.75 Ω, VGEN = 7.5 V, Rg = 1 Ω 2
Rise Time tr 13 26 ns VDD = 75 V, RL = 3.75 Ω, VGEN = 7.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 17 34 ns VDD = 75 V, RL = 3.75 Ω, VGEN = 7.5 V, Rg = 1 Ω 2
Fall Time tf 8 16 ns VDD = 75 V, RL = 3.75 Ω, VGEN = 7.5 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 60 A TC = 25 °C 2
Pulse Diode Forward Current ISM 100 A 2
Body Diode Voltage VSD 0.77 1.1 V IS = 5 A 2
Body Diode Reverse Recovery Time trr 95 190 ns IF = 20 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 280 560 nC IF = 20 A, dI/dt = 100 A/µs, TJ = 25 °C 2
VDS Temperature Coefficient ΔVDS/TJ 105 mV/°C ID = 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ -9.4 mV/°C ID = 250 µA 2
Input Capacitance Ciss 1286 pF VDS = 75 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 327 pF VDS = 75 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 28 pF VDS = 75 V, VGS = 0 V, f = 1 MHz 2
Gate-Source Charge Qgs 8 nC 2
Gate-Drain Charge Qgd 10 nC 2
Reverse Recovery Fall Time ta 72 ns IF = 20 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Reverse Recovery Rise Time tb 23 ns IF = 20 A, dI/dt = 100 A/µs, TJ = 25 °C 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper d. The DFN5X 6X is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process 1

CAD (KiCad official)

  • Symbol: BSC190N15NS3G-VB
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: bsc190n15ns3g-vb-etched.step / bsc190n15ns3g-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bsc190n15ns3g-vb.step / bsc190n15ns3g-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 4538f8a2a89197c1, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF