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BSC160N10NS3G

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by adom

Tokmas MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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BSC160N10NS3G

Tokmas · MOSFETs · DFN-8(5x6)

BSC160N10NS3G from Tokmas, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET; the datasheet pin diagram marks pin 1 as Source.
2 S passive Source terminal of the N-channel MOSFET, one of three source pins in the DFN5*6 pin diagram.
3 S passive Source terminal of the N-channel MOSFET, one of three source pins in the DFN5*6 pin diagram.
4 G input Gate terminal of the N-channel MOSFET, used to control the device; the datasheet gives VGS(th) of 1.4 to 2.0 V and VGS of ±20 V maximum.
5 D passive Drain terminal of the N-channel MOSFET, one of four drain pins in the DFN5*6 pin diagram.
6 D passive Drain terminal of the N-channel MOSFET, one of four drain pins in the DFN5*6 pin diagram.
7 D passive Drain terminal of the N-channel MOSFET, one of four drain pins in the DFN5*6 pin diagram.
8 D passive Drain terminal of the N-channel MOSFET, one of four drain pins in the DFN5*6 pin diagram.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Tokmas
Package DFN-8(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to Source Voltage VDS 100 V 1
Gate to Source Voltage VGS -20 20 V 1
Continuous Drain Current (Silicon Limited) ID 44 A TC=25℃ 1
Continuous Drain Current (Silicon Limited) ID 31 A TC=100℃ 1
Continuous Drain Current (Package Limited) ID 30 A TC=25℃ 1
Pulsed Drain Current IDM 180 A 1
Avalanche Energy, Single Pulse EAS 45 mJ L=0.4mH, TC=25℃ 1
Power Dissipation PD 50 W TC=25℃ 1
Operating and Storage Temperature TJ, Tstg -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 55 ℃/W 1
Thermal Resistance Junction-Case RθJC 2.5 ℃/W 1
Drain to Source Breakdown Voltage V(BR)DSS 100 V VGS=0V, ID=250mA 2
Gate Threshold Voltage VGS(th) 1.4 2 2.4 V VGS=VDS, ID=250mA 2
Zero Gate Voltage Drain Current IDSS 1 mA VGS=0V, VDS=100V, Tj=25℃ 2
Zero Gate Voltage Drain Current IDSS 100 mA VGS=0V, VDS=100V, Tj=100℃ 2
Gate to Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Drain to Source on Resistance RDS(on) 14 17 mW VGS=10V, ID=15A 2
Drain to Source on Resistance RDS(on) 22 26 mW VGS=4.5V, ID=10A 2
Diode Forward Voltage VSD 0.9 1.2 V VGS=0V, IF=20A 2

CAD (KiCad official)

  • Symbol: BSC160N10NS3G
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: bsc160n10ns3g-etched.step / bsc160n10ns3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bsc160n10ns3g.step / bsc160n10ns3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Tokmas datasheet (6 pp, sha256 96ba36a395f677d1, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF