# BSC160N10NS3G-HXY

**HXY MOSFET** · MOSFETs · DFN5x6-8L

BSC160N10NS3G-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (VDS rating 100V, ID 75A), tied with pins 2 and 3. |
| 2 | S | passive | Source terminal of the N-channel MOSFET (VDS rating 100V, ID 75A), tied with pins 1 and 3. |
| 3 | S | passive | Source terminal of the N-channel MOSFET (VDS rating 100V, ID 75A), tied with pins 1 and 2. |
| 4 | G | input | Gate terminal; gate-source voltage limited to ±20V with threshold of 1.0 to 2.5V at 250μA. |
| 5 | D | passive | Drain terminal of the MOSFET (VDS 100V max, pulsed ID 300A), tied with pins 6, 7 and 8. |
| 6 | D | passive | Drain terminal of the MOSFET (VDS 100V max, pulsed ID 300A), tied with pins 5, 7 and 8. |
| 7 | D | passive | Drain terminal of the MOSFET (VDS 100V max, pulsed ID 300A), tied with pins 5, 6 and 8. |
| 8 | D | passive | Drain terminal of the MOSFET (VDS 100V max, pulsed ID 300A), tied with pins 5, 6 and 7. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5x6-8L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 |  |  | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=100V, VGS=0V | 2 |
| Gate to Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) |  | 7.3 | 9.2 | mΩ | VGS=10V, ID=20A | 2 |
| Static Drain-Source On-Resistance | RDS(on) |  | 9 | 13.5 | mΩ | VGS=4.5V, ID=8A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS |  |  | 75 | A |  | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM |  |  | 300 | A |  | 2 |
| Drain to Source Diode Forward Voltage | VSD |  |  | 1 | V | VGS=0V, IS=30A | 2 |
| Drain source voltage | VDS |  |  | 100 | V | Tj=25℃ | 1 |
| Gate source voltage | VGS | -20 |  | 20 | V | Tj=25℃ | 1 |
| Continuous drain current | ID |  |  | 75 | A | Tj=25℃ | 1 |
| Pulsed drain current | ID, pulse |  |  | 300 | A | Tj=25℃ | 1 |
| Power dissipation | PD |  |  | 97 | W | Tj=25℃ | 1 |
| Single pulsed avalanche energy | EAS |  |  | 90 | mJ | TJ=25℃, VDD=50V, VG=10V, RG=25Ω, L=0.5mH, IAS=19A | 1 |
| Operation and storage temperature | Tstg, Tj | -55 |  | 150 | ℃ |  | 1 |
| Thermal resistance, junction-case | RθJC |  |  | 1.3 | °C/W |  | 1 |
| Input Capacitance | Ciss |  | 2046 |  | pF | VDS=50V, VGS=0V, f=1.0MHz | 2 |
| Output Capacitance | Coss |  | 865 |  | pF | VDS=50V, VGS=0V, f=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 25 |  | pF | VDS=50V, VGS=0V, f=1.0MHz | 2 |
| Total Gate Charge | Qg |  | 39.4 |  | nC | VDS=50V, ID=30A, VGS=10V | 2 |
| Gate-Source Charge | Qgs |  | 5.2 |  | nC | VDS=50V, ID=30A, VGS=10V | 2 |
| Gate-Drain Charge | Qgd |  | 9.8 |  | nC | VDS=50V, ID=30A, VGS=10V | 2 |
| Turn-on Delay Time | td(on) |  | 20 |  | ns | VDD=50V, ID=25A, RG=6Ω, VGS=10V | 2 |
| Turn-on Rise Time | tr |  | 5.2 |  | ns | VDD=50V, ID=25A, RG=6Ω, VGS=10V | 2 |
| Turn-off Delay Time | td(off) |  | 49 |  | ns | VDD=50V, ID=25A, RG=6Ω, VGS=10V | 2 |
| Turn-off Fall Time | tf |  | 12 |  | ns | VDD=50V, ID=25A, RG=6Ω, VGS=10V | 2 |
| Body Diode Reverse Recovery Time | trr |  | 49 |  | ns | TJ=25℃, IF=12A, dI/dt=100A/μs | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 85 |  | nC | TJ=25℃, IF=12A, dI/dt=100A/μs | 2 |

## CAD (KiCad official)

- Symbol: `BSC160N10NS3G-HXY`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files: `bsc160n10ns3g-hxy-etched.step` / `bsc160n10ns3g-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bsc160n10ns3g-hxy.step` / `bsc160n10ns3g-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/bsc160n10ns3g-hxy-datasheet.pdf) (7 pp, sha256 `64ad030bcd62702d`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bsc160n10ns3g-hxy-datasheet.pdf)