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BSC109N10NS3G
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Tokmas MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BSC109N10NS3G
Tokmas · MOSFETs · DFN-8(5x6)
BSC109N10NS3G from Tokmas, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal (Pin 1-3 tied to source) of the N-channel MOSFET, rated for continuous drain/source current of 55A at TC=25C. |
| 2 | S | passive | Source terminal (Pin 1-3 tied to source) of the N-channel MOSFET, rated for continuous drain/source current of 55A at TC=25C. |
| 3 | S | passive | Source terminal (Pin 1-3 tied to source) of the N-channel MOSFET, rated for continuous drain/source current of 55A at TC=25C. |
| 4 | G | input | Gate terminal of the MOSFET with a maximum gate-source voltage of ±20V and a threshold of 1V to 2.5V. |
| 5 | D | passive | Drain terminal (Pin 5-8 tied to drain) with a maximum drain-source voltage of 100V and continuous drain current of 55A. |
| 6 | D | passive | Drain terminal (Pin 5-8 tied to drain) with a maximum drain-source voltage of 100V and continuous drain current of 55A. |
| 7 | D | passive | Drain terminal (Pin 5-8 tied to drain) with a maximum drain-source voltage of 100V and continuous drain current of 55A. |
| 8 | D | passive | Drain terminal (Pin 5-8 tied to drain) with a maximum drain-source voltage of 100V and continuous drain current of 55A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tokmas |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
CAD (KiCad official)
- Symbol:
BSC109N10NS3G - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
bsc109n10ns3g-etched.step/bsc109n10ns3g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bsc109n10ns3g.step/bsc109n10ns3g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tokmas datasheet (5 pp, sha256
3d9eb46625dee0fd, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BSC109N10NS3G
**Tokmas** · MOSFETs · DFN-8(5x6)
BSC109N10NS3G from Tokmas, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal (Pin 1-3 tied to source) of the N-channel MOSFET, rated for continuous drain/source current of 55A at TC=25C. |
| 2 | S | passive | Source terminal (Pin 1-3 tied to source) of the N-channel MOSFET, rated for continuous drain/source current of 55A at TC=25C. |
| 3 | S | passive | Source terminal (Pin 1-3 tied to source) of the N-channel MOSFET, rated for continuous drain/source current of 55A at TC=25C. |
| 4 | G | input | Gate terminal of the MOSFET with a maximum gate-source voltage of ±20V and a threshold of 1V to 2.5V. |
| 5 | D | passive | Drain terminal (Pin 5-8 tied to drain) with a maximum drain-source voltage of 100V and continuous drain current of 55A. |
| 6 | D | passive | Drain terminal (Pin 5-8 tied to drain) with a maximum drain-source voltage of 100V and continuous drain current of 55A. |
| 7 | D | passive | Drain terminal (Pin 5-8 tied to drain) with a maximum drain-source voltage of 100V and continuous drain current of 55A. |
| 8 | D | passive | Drain terminal (Pin 5-8 tied to drain) with a maximum drain-source voltage of 100V and continuous drain current of 55A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tokmas |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
## CAD (KiCad official)
- Symbol: `BSC109N10NS3G`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `bsc109n10ns3g-etched.step` / `bsc109n10ns3g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bsc109n10ns3g.step` / `bsc109n10ns3g.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Tokmas datasheet](docs/bsc109n10ns3g-datasheet.pdf) (5 pp, sha256 `3d9eb46625dee0fd`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bsc109n10ns3g-datasheet.pdf)