component
BSC109N10NS3G-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| bsc109n10ns3g-hxy-etched.glb | 13d ago |
| bsc109n10ns3g-hxy-etched.step | 13d ago |
| bsc109n10ns3g-hxy-hero.glb | 13d ago |
| bsc109n10ns3g-hxy-hero.overlay.json | 13d ago |
| bsc109n10ns3g-hxy.glb | 13d ago |
| bsc109n10ns3g-hxy.kicad_mod | 13d ago |
| bsc109n10ns3g-hxy.kicad_sym | 13d ago |
| bsc109n10ns3g-hxy.lbr | 13d ago |
| bsc109n10ns3g-hxy.step | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
BSC109N10NS3G-HXY
HXY MOSFET · MOSFETs · DFN5x6-8L
BSC109N10NS3G-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; the body diode is rated for a maximum continuous forward current of 75 A. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the body diode is rated for a maximum continuous forward current of 75 A. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the body diode is rated for a maximum continuous forward current of 75 A. |
| 4 | G | input | Gate terminal; the gate-source voltage is rated at ±20 V. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is rated at 100 V and continuous drain current at 75 A. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is rated at 100 V and continuous drain current at 75 A. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is rated at 100 V and continuous drain current at 75 A. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is rated at 100 V and continuous drain current at 75 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain source voltage | VDS | 100 | V | 1 | |||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous drain current | ID | 75 | A | 1 | |||
| Pulsed drain current | ID, pulse | 300 | A | 1 | |||
| Power dissipation | PD | 97 | W | 1 | |||
| Single pulsed avalanche energy | EAS | 90 | mJ | 1 | |||
| Operation and storage temperature | Tstg，Tj | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction-case | RθJC | 1.3 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V, VGS=0V, | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS= ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance (VGS=10V) | RDS(on) | 7.3 | 9.2 | mΩ | VGS=10V, ID=20A | 2 | |
| Static Drain-Source on-Resistance (VGS=4.5V) | RDS(on) | 9 | 13.5 | mΩ | VGS=4.5V, ID=8A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 75 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 300 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1 | V | VGS=0V, IS=30A | 2 |
CAD (KiCad official)
- Symbol:
BSC109N10NS3G-HXY - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
bsc109n10ns3g-hxy-etched.step/bsc109n10ns3g-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bsc109n10ns3g-hxy.step/bsc109n10ns3g-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (7 pp, sha256
152bb28f5dbe4533, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).