BSC098N10NS5-HXY

{
  "slug": "bsc098n10ns5-hxy",
  "version": "0.1.0",
  "type": "component",
  "description": "HXY MOSFET MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "tags": [
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    "bsc098n10ns5-hxy.step",
    "bsc098n10ns5-hxy.lbr",
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    "docs/bsc098n10ns5-hxy-datasheet.pdf",
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    "viewers/footprint.html",
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  "component": {
    "mpn": "BSC098N10NS5-HXY",
    "manufacturer": "HXY MOSFET",
    "package": "DFN-8(5x6)",
    "pin_count": 9,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757976272578863104",
    "parts": {
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      "lbr": "bsc098n10ns5-hxy.lbr"
    },
    "distributor_links": {
      "lcsc": "C7543020"
    },
    "distributor_check": {
      "checked_at": "2026-10-20T18:19:58Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
      },
      "mouser": {
        "pn": null,
        "status": "no match"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET; the datasheet rates the device at VDS 100 V and VGS ±20 V."
      },
      {
        "number": "2",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET; the datasheet rates the device at VDS 100 V and VGS ±20 V."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET; the datasheet rates the device at VDS 100 V and VGS ±20 V."
      },
      {
        "number": "4",
        "name": "G",
        "type": "input",
        "description": "Gate terminal; the datasheet specifies VGS ±20 V maximum and a gate threshold VGS(th) of 1.0 to 2.5 V at ID = 250 µA."
      },
      {
        "number": "5",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel MOSFET; the datasheet rates continuous drain current ID at 75 A."
      },
      {
        "number": "6",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel MOSFET; the datasheet rates continuous drain current ID at 75 A."
      },
      {
        "number": "7",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel MOSFET; the datasheet rates continuous drain current ID at 75 A."
      },
      {
        "number": "8",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel MOSFET; the datasheet rates continuous drain current ID at 75 A."
      },
      {
        "number": "9",
        "name": "EP",
        "type": "passive",
        "description": "Exposed pad (from the footprint; not named in the datasheet pin table)."
      }
    ],
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        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
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          "exposed pad 9 added from the footprint"
        ],
        "pages_sent": 6,
        "cost_usd": 0.03,
        "at": "2026-10-20T18:17:22"
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        "pages": 6,
        "sha256": "41a828a2c7f18536",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 9,
        "described": 9,
        "cites_pages": true,
        "refuses_to_fabricate": true
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        "checked": "2026-10-20",
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      },
      {
        "file": "bsc098n10ns5-hxy-etched.step",
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        "zmin_mm": 0.0,
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        "sha256": "325774c0f089755d255d0bb41e40005778d565db97a636339453c33066c2c17f",
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}