component
BSC098N10NS5-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BSC098N10NS5-HXY
HXY MOSFET · MOSFETs · DFN-8(5x6)
BSC098N10NS5-HXY from HXY MOSFET, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; the datasheet rates the device at VDS 100 V and VGS ±20 V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the datasheet rates the device at VDS 100 V and VGS ±20 V. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the datasheet rates the device at VDS 100 V and VGS ±20 V. |
| 4 | G | input | Gate terminal; the datasheet specifies VGS ±20 V maximum and a gate threshold VGS(th) of 1.0 to 2.5 V at ID = 250 µA. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET; the datasheet rates continuous drain current ID at 75 A. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET; the datasheet rates continuous drain current ID at 75 A. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET; the datasheet rates continuous drain current ID at 75 A. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET; the datasheet rates continuous drain current ID at 75 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain source voltage | VDS | 100 | V | 1 | |||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous drain current | ID | 75 | A | 1 | |||
| Pulsed drain current | ID, pulse | 300 | A | 1 | |||
| Power dissipation | PD | 97 | W | 1 | |||
| Single pulsed avalanche energy | EAS | 90 | mJ | 1 | |||
| Operation and storage temperature | Tstg，Tj | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction-case | RθJC | 1.3 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS= ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 6.4 | 7.5 | mΩ | VGS=10V, ID=20A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 9.2 | 11.4 | mΩ | VGS=4.5V, ID=8A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 75 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 300 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1 | V | VGS=0V, IS=30A | 2 |
CAD (KiCad official)
- Symbol:
BSC098N10NS5-HXY - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
bsc098n10ns5-hxy-etched.step/bsc098n10ns5-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bsc098n10ns5-hxy.step/bsc098n10ns5-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
41a828a2c7f18536, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BSC098N10NS5-HXY
**HXY MOSFET** · MOSFETs · DFN-8(5x6)
BSC098N10NS5-HXY from HXY MOSFET, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; the datasheet rates the device at VDS 100 V and VGS ±20 V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the datasheet rates the device at VDS 100 V and VGS ±20 V. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the datasheet rates the device at VDS 100 V and VGS ±20 V. |
| 4 | G | input | Gate terminal; the datasheet specifies VGS ±20 V maximum and a gate threshold VGS(th) of 1.0 to 2.5 V at ID = 250 µA. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET; the datasheet rates continuous drain current ID at 75 A. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET; the datasheet rates continuous drain current ID at 75 A. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET; the datasheet rates continuous drain current ID at 75 A. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET; the datasheet rates continuous drain current ID at 75 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain source voltage | VDS | | | 100 | V | | 1 |
| Gate source voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous drain current | ID | | | 75 | A | | 1 |
| Pulsed drain current | ID, pulse | | | 300 | A | | 1 |
| Power dissipation | PD | | | 97 | W | | 1 |
| Single pulsed avalanche energy | EAS | | | 90 | mJ | | 1 |
| Operation and storage temperature | Tstg，Tj | -55 | | 150 | ℃ | | 1 |
| Thermal resistance, junction-case | RθJC | | | 1.3 | °C/W | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | | | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=100V, VGS=0V | 2 |
| Gate to Body Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS= ±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | | 6.4 | 7.5 | mΩ | VGS=10V, ID=20A | 2 |
| Static Drain-Source on-Resistance | RDS(on) | | 9.2 | 11.4 | mΩ | VGS=4.5V, ID=8A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS | | | 75 | A | | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | | | 300 | A | | 2 |
| Drain to Source Diode Forward Voltage | VSD | | | 1 | V | VGS=0V, IS=30A | 2 |
## CAD (KiCad official)
- Symbol: `BSC098N10NS5-HXY`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `bsc098n10ns5-hxy-etched.step` / `bsc098n10ns5-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bsc098n10ns5-hxy.step` / `bsc098n10ns5-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757976272578863104) (6 pp, sha256 `41a828a2c7f18536`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bsc098n10ns5-hxy-datasheet.pdf)