component
BSC094N06LS5ATMA1
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Infineon Technologies Discrete Semiconductor Products, 8-PowerTDFN. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by adom_assets · KiCad file format 20240108
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BSC094N06LS5ATMA1
Infineon Technologies · Discrete Semiconductor Products · 8-PowerTDFN
BSC094N06LS5ATMA1 from Infineon Technologies, in a 8-PowerTDFN. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the N-channel MOSFET, with the internal body diode connected between source and drain. |
| 2 | Source | passive | Source terminal of the N-channel MOSFET, with the internal body diode connected between source and drain. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET, with the internal body diode connected between source and drain. |
| 4 | Gate | input | Gate terminal; the gate-source voltage VGS is rated from -20 V to 20 V. |
| 5 | Drain | passive | Drain terminal; drain-source voltage VDS is rated 60 V and continuous drain current ID is 47 A at VGS=10V, TC=25°C. |
| 6 | Drain | passive | Drain terminal; drain-source voltage VDS is rated 60 V and continuous drain current ID is 47 A at VGS=10V, TC=25°C. |
| 7 | Drain | passive | Drain terminal; drain-source voltage VDS is rated 60 V and continuous drain current ID is 47 A at VGS=10V, TC=25°C. |
| 8 | Drain | passive | Drain terminal; drain-source voltage VDS is rated 60 V and continuous drain current ID is 47 A at VGS=10V, TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | 8-PowerTDFN |
| Category | Discrete Semiconductor Products |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 47 | A | VGS=10V,TC=25°C | 3 | ||
| Continuous drain current | ID | 30 | A | VGS=10V,TC=100°C | 3 | ||
| Continuous drain current | ID | 11 | A | VGS=10V,TA=25°C,RthJA=50K/W | 3 | ||
| Pulsed drain current | ID,pulse | 188 | A | TC=25°C | 3 | ||
| Avalanche energy, single pulse | EAS | 13 | mJ | ID=30A,RGS=25Ω | 3 | ||
| Gate source voltage | VGS | -20 | 20 | V | 3 | ||
| Power dissipation | Ptot | 36 | W | TC=25°C | 3 | ||
| Power dissipation | Ptot | 2.1 | W | TA=25°C,RthJA=50K/W | 3 | ||
| Operating and storage temperature | Tj,Tstg | -55 | 150 | °C | IEC climatic category; DIN IEC 68-1: 55/150/56 | 3 | |
| Thermal resistance, junction - case, bottom | RthJC | 2.1 | 3.5 | K/W | 3 | ||
| Thermal resistance, junction - ambient, device on PCB | RthJA | 50 | K/W | Device on PCB, 6 cm2 cooling area | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 60 | V | VGS=0V,ID=1mA | 4 | ||
| Gate threshold voltage | VGS(th) | 1.1 | 1.7 | 2.3 | V | VDS=VGS,ID=14µA | 4 |
| Zero gate voltage drain current | IDSS | 0.1 | 10 | µA | VDS=60V,VGS=0V,Tj=25°C | 4 | |
| Zero gate voltage drain current | IDSS | 1 | 100 | µA | VDS=60V,VGS=0V,Tj=125°C | 4 | |
| Gate-source leakage current | IGSS | 10 | 100 | nA | VGS=20V,VDS=0V | 4 | |
| Drain-source on-state resistance | RDS(on) | 7.7 | 9.4 | mΩ | VGS=10V,ID=24A | 4 | |
| Drain-source on-state resistance | RDS(on) | 11 | 13.4 | mΩ | VGS=4.5V,ID=12A | 4 | |
| Gate resistance | RG | 1.1 | 1.65 | Ω | 4 | ||
| Transconductance | gfs | 22 | 45 | S | /VDS/>2/ID/RDS(on)max,ID=24A | 4 | |
| Input capacitance | Ciss | 970 | 1300 | pF | VGS=0V,VDS=30V,f=1MHz | 4 | |
| Output capacitance | Coss | 210 | 280 | pF | VGS=0V,VDS=30V,f=1MHz | 4 | |
| Reverse transfer capacitance | Crss | 12 | 21 | pF | VGS=0V,VDS=30V,f=1MHz | 4 | |
| Gate charge total | Qg | 7 | 9.4 | nC | VDD=30V,ID=24A,VGS=0to4.5V | 4 | |
| Gate to drain charge | Qgd | 2 | 3.5 | nC | VDD=30V,ID=24A,VGS=0to4.5V | 4 | |
| Output charge | Qoss | 13 | 18 | nC | VDD=30V,VGS=0V | 4 | |
| Diode continuous forward current | IS | 30 | A | TC=25°C | 5 | ||
| Diode pulse current | IS,pulse | 188 | A | TC=25°C | 5 | ||
| Diode forward voltage | VSD | 0.9 | 1.2 | V | VGS=0V,IF=24A,Tj=25°C | 5 | |
| Reverse recovery time | trr | 18 | 36 | ns | VR=30V,IF=24A,diF/dt=100A/µs | 5 | |
| Reverse recovery charge | Qrr | 6 | 12 | nC | VR=30V,IF=24A,diF/dt=100A/µs | 5 |
CAD (KiCad official)
- Symbol:
BSC094N06LS5ATMA1 - Footprint:
Adom_Gen:Infineon_Technologies_BSC094 - 3D model: 8-PowerTDFN (KiCad packages3D, STEP)
- 3D model files:
bsc094n06ls5atma1-etched.step/bsc094n06ls5atma1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bsc094n06ls5atma1.step/bsc094n06ls5atma1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (13 pp, sha256
da9c241c78902c59, retrieved 2026-11-05, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).