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README

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BSC080P03LSG-HXY

HXY MOSFET · MOSFETs · DFN5x6-8L

BSC080P03LSG-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET; pin 1 is marked on the package, and the drain-source voltage rating is -30V.
2 S passive Source of the P-channel MOSFET, connected in parallel with the other source pins.
3 S passive Source of the P-channel MOSFET, connected in parallel with the other source pins.
4 G input Gate of the P-channel MOSFET; the gate-source voltage rating is ±20V and the device works with gate drive as low as -4.5V.
5 D passive Drain of the P-channel MOSFET, with a continuous drain current of -70A at TC=25℃.
6 D passive Drain of the P-channel MOSFET, connected in parallel with the other drain pins.
7 D passive Drain of the P-channel MOSFET, connected in parallel with the other drain pins.
8 D passive Drain of the P-channel MOSFET, connected in parallel with the other drain pins.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN5x6-8L
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS -30 V VGS = 0V, ID = -250µA 2
Gate-body Leakage current IGSS -100 100 nA VDS = 0V, VGS = ±20V 2
Zero Gate Voltage Drain Current, TJ=25℃ IDSS -1 μA TJ=25℃, VDS = -24V, VGS = 0V 2
Zero Gate Voltage Drain Current, TJ=55℃ IDSS -5 μA TJ=55℃, VDS = -24V, VGS = 0V 2
Gate-Threshold Voltage VGS(th) -1 -1.6 -2.5 V VDS = VGS, ID = -250µA 2
Drain-Source On-Resistance RDS(on) 6 8.8 mΩ VGS = -10V, ID = -12A 2
Drain-Source On-Resistance RDS(on) 9 14 mΩ VGS = -4.5V, ID = -8A 2
Diode Forward Voltage VSD -1 V IS = -1A, VGS = 0V 2
Continuous Source Current IS -70 A VG=VD=0V, Force Current 2
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current, TC=25℃ ID@TC=25℃ -70 A VGS @ 10V 1
Continuous Drain Current, TC=75℃ ID@TC=75℃ -40 A VGS @ 10V 1
Pulsed Drain Current IDM -175 A 1
Single Pulse Avalanche Energy EAS 31 mJ VDD=-25V, VGS=-10V, L=0.1mH, IAS=-25A 1
Total Power Dissipation, TC=25℃ PD@TC=25℃ 31.2 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Case RθJC 4 ℃/W 1
Thermal Resistance Junction-Ambient RθJA 61 ℃/W 1

CAD (KiCad official)

  • Symbol: BSC080P03LSG-HXY
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8L (KiCad packages3D, STEP)
  • 3D model files: bsc080p03lsg-hxy-etched.step / bsc080p03lsg-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bsc080p03lsg-hxy.step / bsc080p03lsg-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (7 pp, sha256 798bf5bb4a3697bc, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF