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BSC0702LSATMA1-HXY

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HXY MOSFET MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorbsc0702lsatma1-hxyfactory-2.0.0extractor-text

Verified BSC0702LSATMA1-HXY

by Ray · last 8 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

8 Nov 2026RayPublished by the parts factory: tier lcsc, 9 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: BSC0702LSATMA1-HXY · DFN-8(5x6) · 9 pins
  • ✓copper: 16 copper pads, none touching another net
  • ✓datasheet: all 9 pin names found in the 8-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: DFN-S-8-1EP_6x5mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-ux_yg_5_/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 9 pins = 9 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 9 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ bsc0702lsatma1-hxy.kicad_sym✓ bsc0702lsatma1-hxy.kicad_mod✓ bsc0702lsatma1-hxy.step
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Ray Publish 0.1.0 b1b06c3 3d ago

BSC0702LSATMA1-HXY

HXY MOSFET · MOSFETs · DFN-8(5x6)

BSC0702LSATMA1-HXY from HXY MOSFET, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel SGT MOSFET, one of three source pins (VDS 60V, ID 125A at TC=25℃ for the device).
2 S passive Source of the N-channel SGT MOSFET, one of three source pins (VDS 60V, ID 125A at TC=25℃ for the device).
3 S passive Source of the N-channel SGT MOSFET, one of three source pins (VDS 60V, ID 125A at TC=25℃ for the device).
4 G input Gate of the MOSFET, rated ±20V gate-source with threshold 1.2V to 2.2V at ID=250μA and RDS(on) below 2.9mΩ at VGS=10V.
5 D passive Drain of the MOSFET, one of four drain pins, rated 60V drain-source with 125A continuous current at TC=25℃.
6 D passive Drain of the MOSFET, one of four drain pins, rated 60V drain-source with 125A continuous current at TC=25℃.
7 D passive Drain of the MOSFET, one of four drain pins, rated 60V drain-source with 125A continuous current at TC=25℃.
8 D passive Drain of the MOSFET, one of four drain pins, rated 60V drain-source with 125A continuous current at TC=25℃.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN-8(5x6)
Category Triode/MOS Tube/Transistor
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 60 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS= ±20V 2
Gate Threshold Voltage VGS(th) 1.2 1.6 2.2 V VDS=VGS, ID=250μA 2
Static Drain-Source on-Resistance RDS(on) 2.4 2.9 mΩ VGS=10V, ID=20A 2
Input Capacitance Ciss 4610 6915 pF VDS=30V, VGS=0V, f=1.0MHz 2
Output Capacitance Coss 2188 3282 pF VDS=30V, VGS=0V, f=1.0MHz 2
Total Gate Charge Qg 74.37 nC VDS=30V, ID=40A, VGS=10V 2
Gate-Source Charge Qgs 17.26 nC VDS=30V, ID=40A, VGS=10V 2
Gate-Drain (Miller) Charge Qgd 9.44 nC VDS=30V, ID=40A, VGS=10V 2
Turn-off Fall Time tf 105.07 ns VDD=30V, ID=40A, RG=2.7Ω, VGS=10V 2
Maximum Continuous Drain to Source Diode Forward Current IS 125 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 641 A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS=0V, IS=40A 2
Body Diode Reverse Recovery Time trr 52.78 ns TJ=25℃, IF=40A, dI/dt=100A/μs 2
Body Diode Reverse Recovery Charge Qrr 56.31 nC 2
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current, VGS @ 10V ID@TC=25℃ 125 A 1
Continuous Drain Current, VGS @ 10V ID@TC=100℃ 101 A 1
Pulsed Drain Current IDM 641 A 1
Single Pulse Avalanche Energy EAS 189 mJ 1
Total Power Dissipation PD@TC=25℃ 113 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Case RθJC 1.11 ℃/W 1
Thermal Resistance Junction-Ambient RθJA 39.4 ℃/W 1

CAD (KiCad official)

  • Symbol: BSC0702LSATMA1-HXY
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: bsc0702lsatma1-hxy-etched.step / bsc0702lsatma1-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bsc0702lsatma1-hxy.step / bsc0702lsatma1-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (8 pp, sha256 90621ccb6aba49b5, retrieved 2026-11-08, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF