component
BSC0702LS-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BSC0702LS-HXY
HXY MOSFET · MOSFETs · DFN5x6-8L
BSC0702LS-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel SGT MOSFET; the datasheet marks Pin 1 on the package drawing at this source position. |
| 2 | S | passive | Source terminal of the N-channel SGT MOSFET, with the body diode forward voltage VSD specified at 1.2 V maximum at IS=40 A. |
| 3 | S | passive | Source terminal of the N-channel SGT MOSFET, rated with a maximum continuous source-drain diode current of 125 A. |
| 4 | G | passive | Gate terminal of the MOSFET; the gate-source voltage is rated at ±20 V. |
| 5 | D | passive | Drain terminal of the MOSFET; the drain-source voltage is rated at 60 V with 125 A continuous drain current at TC=25℃. |
| 6 | D | passive | Drain terminal of the MOSFET; the drain-source voltage is rated at 60 V with 125 A continuous drain current at TC=25℃. |
| 7 | D | passive | Drain terminal of the MOSFET; the drain-source voltage is rated at 60 V with 125 A continuous drain current at TC=25℃. |
| 8 | D | passive | Drain terminal of the MOSFET; the drain-source voltage is rated at 60 V with 125 A continuous drain current at TC=25℃. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
CAD (KiCad official)
- Symbol:
BSC0702LS-HXY - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
bsc0702ls-hxy-etched.step/bsc0702ls-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bsc0702ls-hxy.step/bsc0702ls-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (8 pp, sha256
fcc6529ca2ab6e75, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BSC0702LS-HXY
**HXY MOSFET** · MOSFETs · DFN5x6-8L
BSC0702LS-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel SGT MOSFET; the datasheet marks Pin 1 on the package drawing at this source position. |
| 2 | S | passive | Source terminal of the N-channel SGT MOSFET, with the body diode forward voltage VSD specified at 1.2 V maximum at IS=40 A. |
| 3 | S | passive | Source terminal of the N-channel SGT MOSFET, rated with a maximum continuous source-drain diode current of 125 A. |
| 4 | G | passive | Gate terminal of the MOSFET; the gate-source voltage is rated at ±20 V. |
| 5 | D | passive | Drain terminal of the MOSFET; the drain-source voltage is rated at 60 V with 125 A continuous drain current at TC=25℃. |
| 6 | D | passive | Drain terminal of the MOSFET; the drain-source voltage is rated at 60 V with 125 A continuous drain current at TC=25℃. |
| 7 | D | passive | Drain terminal of the MOSFET; the drain-source voltage is rated at 60 V with 125 A continuous drain current at TC=25℃. |
| 8 | D | passive | Drain terminal of the MOSFET; the drain-source voltage is rated at 60 V with 125 A continuous drain current at TC=25℃. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
## CAD (KiCad official)
- Symbol: `BSC0702LS-HXY`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files: `bsc0702ls-hxy-etched.step` / `bsc0702ls-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bsc0702ls-hxy.step` / `bsc0702ls-hxy.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8757976899945943040) (8 pp, sha256 `fcc6529ca2ab6e75`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bsc0702ls-hxy-datasheet.pdf)