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BSC067N06LS3G-VB
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VBsemi Elec MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BSC067N06LS3G-VB
VBsemi Elec · MOSFETs · DFN5x6-8
BSC067N06LS3G-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, marked with the pin-1 dot on the package; continuous source current (diode conduction) IS is 70 A (package limited). |
| 2 | S | passive | Source terminal of the N-channel MOSFET, tied with the other source pins; continuous source current (diode conduction) IS is 70 A (package limited). |
| 3 | S | passive | Source terminal of the N-channel MOSFET, tied with the other source pins; continuous source current (diode conduction) IS is 70 A (package limited). |
| 4 | G | input | Gate terminal of the N-channel MOSFET with an absolute maximum gate-source voltage VGS of ±20 V and a gate threshold VGS(th) minimum of 2.5 V and maximum of 4 V at ID = 250 µA. |
| 5 | D | passive | Drain terminal of the 60 V N-channel MOSFET, tied with the other drain pins; pulsed drain current IDM is 100 A. |
| 6 | D | passive | Drain terminal of the 60 V N-channel MOSFET, tied with the other drain pins; pulsed drain current IDM is 100 A. |
| 7 | D | passive | Drain terminal of the 60 V N-channel MOSFET, tied with the other drain pins; pulsed drain current IDM is 100 A. |
| 8 | D | passive | Drain terminal of the 60 V N-channel MOSFET, tied with the other drain pins; pulsed drain current IDM is 100 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
CAD (KiCad official)
- Symbol:
BSC067N06LS3G-VB - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files:
bsc067n06ls3g-vb-etched.step/bsc067n06ls3g-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bsc067n06ls3g-vb.step/bsc067n06ls3g-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
4e0841c003645ae6, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BSC067N06LS3G-VB
**VBsemi Elec** · MOSFETs · DFN5x6-8
BSC067N06LS3G-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, marked with the pin-1 dot on the package; continuous source current (diode conduction) IS is 70 A (package limited). |
| 2 | S | passive | Source terminal of the N-channel MOSFET, tied with the other source pins; continuous source current (diode conduction) IS is 70 A (package limited). |
| 3 | S | passive | Source terminal of the N-channel MOSFET, tied with the other source pins; continuous source current (diode conduction) IS is 70 A (package limited). |
| 4 | G | input | Gate terminal of the N-channel MOSFET with an absolute maximum gate-source voltage VGS of ±20 V and a gate threshold VGS(th) minimum of 2.5 V and maximum of 4 V at ID = 250 µA. |
| 5 | D | passive | Drain terminal of the 60 V N-channel MOSFET, tied with the other drain pins; pulsed drain current IDM is 100 A. |
| 6 | D | passive | Drain terminal of the 60 V N-channel MOSFET, tied with the other drain pins; pulsed drain current IDM is 100 A. |
| 7 | D | passive | Drain terminal of the 60 V N-channel MOSFET, tied with the other drain pins; pulsed drain current IDM is 100 A. |
| 8 | D | passive | Drain terminal of the 60 V N-channel MOSFET, tied with the other drain pins; pulsed drain current IDM is 100 A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
## CAD (KiCad official)
- Symbol: `BSC067N06LS3G-VB`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files: `bsc067n06ls3g-vb-etched.step` / `bsc067n06ls3g-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bsc067n06ls3g-vb.step` / `bsc067n06ls3g-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/bsc067n06ls3g-vb-datasheet.pdf) (7 pp, sha256 `4e0841c003645ae6`, retrieved 2026-10-30, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bsc067n06ls3g-vb-datasheet.pdf)