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BSC042N03LSG-HXY

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HXY MOSFET MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BSC042N03LSG-HXY

HXY MOSFET · MOSFETs · DFN5x6-8L

BSC042N03LSG-HXY from HXY MOSFET, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, one of three source pins (VDS max 30V, ID 90A at TC=25°C).
2 S passive Source of the N-channel MOSFET, one of three source pins (VDS max 30V, ID 90A at TC=25°C).
3 S passive Source of the N-channel MOSFET, one of three source pins (VDS max 30V, ID 90A at TC=25°C).
4 G input Gate of the N-channel MOSFET, rated ±20V gate-source with threshold 1.4V min to 2.5V max and usable down to 4.5V drive.
5 D passive Drain of the N-channel MOSFET, one of four drain pins (VDS max 30V, ID 90A at TC=25°C).
6 D passive Drain of the N-channel MOSFET, one of four drain pins (VDS max 30V, ID 90A at TC=25°C).
7 D passive Drain of the N-channel MOSFET, one of four drain pins (VDS max 30V, ID 90A at TC=25°C).
8 D passive Drain of the N-channel MOSFET, one of four drain pins (VDS max 30V, ID 90A at TC=25°C).
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN5x6-8L
Category Triode/MOS Tube/Transistor
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V TC=25°C 1
Gate-Source Voltage VGS -20 20 V TC=25°C 1
Continuous Drain Current ID@TC=25℃ 90 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 75 A VGS @ 10V 1
Pulsed Drain Current IDM 384 A TC=25°C 1
Single Pulse Avalanche Energy EAS 198 mJ TC=25°C 1
Avalanche Current IAS 53.8 A TC=25°C 1
Total Power Dissipation PD 62.5 W @TC=25℃ 1
Storage Temperature Range TSTG -55 175 ℃ 1
Operating Junction Temperature Range TJ -55 175 ℃ 1
Thermal Resistance Junction-Ambient RθJA 62 ℃/W Steady State 1
Thermal Resistance Junction-Ambient RθJA 25 ℃/W t ≤10s 1
Thermal Resistance Junction-Case RθJC 2.4 ℃/W 1
Total Power Dissipation PD 2.42 W @TC=25℃, t ≤10s 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, IDS=250mA 2
Zero Gate Voltage Drain Current IDSS 1 mA VDS=24V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 30 mA VDS=24V, VGS=0V, TJ=85°C 2
Gate Threshold Voltage VGS(th) 1.4 1.7 2.5 V VDS=VGS, IDS=250mA 2
Gate Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Drain-Source On-state Resistance RDS(ON) 3 3.8 mW VGS=10V, IDS=20A 2
Drain-Source On-state Resistance RDS(ON) 4.4 mW VGS=10V, IDS=20A, TJ=125°C 2
Drain-Source On-state Resistance RDS(ON) 4 5.5 mW VGS=4.5V, IDS=15A 2
Diode Forward Voltage VSD 0.8 1.1 V ISD=20A, VGS=0V 2
Gate Resistance RG 1 2 W VGS=0V,VDS=0V,F=1MHz 2
Input Capacitance Ciss 2485 2971 pF VGS=0V, VDS=15V, Frequency=1.0MHz 2
Turn-on Delay Time td(ON) 12.4 23 ns VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W 2
Turn-on Rise Time tr 9.5 18 ns VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W 2
Turn-off Delay Time td(OFF) 27.2 49 ns VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W 2
Turn-off Fall Time tf 35.2 64 ns VDD=15V, RL=15W, IDS=1A, VGEN=10V, RG=6W 2
Total Gate Charge Qg 20.6 28.8 nC VDS=15V, VGS=10V, IDS=20A 2
Forward Transconductance Gfs 24.6 S VDS=5V, IDS=10A 2
Reverse Recovery Time trr 35.6 ns IDS=20A, dlSD/dt=100A/ms 2
Charge Time ta 19.3 ns IDS=20A, dlSD/dt=100A/ms 2
Discharge Time tb 16.3 ns IDS=20A, dlSD/dt=100A/ms 2
Reverse Recovery Charge Qrr 26 nC IDS=20A, dlSD/dt=100A/ms 2
Output Capacitance Coss 850 pF VGS=0V, VDS=15V, Frequency=1.0MHz 2
Reverse Transfer Capacitance Crss 85 pF VGS=0V, VDS=15V, Frequency=1.0MHz 2
Total Gate Charge Qg 9.8 nC VDS=15V, VGS=4.5V, IDS=20A 2
Threshold Gate Charge Qgth 1.8 nC VDS=15V, VGS=4.5V, IDS=20A 2
Gate-Source Charge Qgs 3.8 nC VDS=15V, VGS=4.5V, IDS=20A 2
Gate-Drain Charge Qgd 3.7 nC VDS=15V, VGS=4.5V, IDS=20A 2

CAD (KiCad official)

  • Symbol: BSC042N03LSG-HXY
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8L (KiCad packages3D, STEP)
  • 3D model files: bsc042n03lsg-hxy-etched.step / bsc042n03lsg-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bsc042n03lsg-hxy.step / bsc042n03lsg-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 0dfd7af52126199a, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF